NLV7SZ97DFT2G

NL7SZ97
http://onsemi.com
4
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
IN
DC Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage −0.5 to +7.0 V
I
IK
DC Input Diode Current V
IN
< GND −50 mA
I
OK
DC Output Diode Current V
OUT
< GND −50 mA
I
O
DC Output Source/Sink Current $50 mA
I
CC
DC Supply Current Per Supply Pin $100 mA
I
GND
DC Ground Current per Ground Pin $100 mA
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias +150 °C
q
JA
Thermal Resistance (Note 1) SC−88 350 °C/W
P
D
Power Dissipation in Still Air at 85°C SC−88 200 mW
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Mode (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
>2000
>200
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5) $500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm
2
by 1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Positive DC Supply Voltage 1.65 5.5 V
V
IN
Digital Input Voltage 0 5.5 V
V
OUT
Output Voltage 0 5.5 V
T
A
Operating Free−Air Temperature (Note 6) −55 +125 °C
Dt/DV
Input Transition Rise or Fall Rate V
CC
= 2.5 V $ 0.2 V
V
CC
= 3.3 V $ 0.3 V
V
CC
= 5.0 V $ 0.5 V
0
0
0
No Limit
No Limit
No Limit
nS/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
6. The NL7SZ97 will not have degradation in its electrical spcifications or Mean−Time−Between−Failure (MTBF) when exposed to a
temperature cycle test of 140°C for 21 hours, 135°C for 750 hours and of 130°C for 175 hours.
NL7SZ97
http://onsemi.com
5
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions
V
CC
(V)
T
A
= 255C T
A
v +855C
T
A
= −555C to
+1255C
Unit
Min Typ Max Min Max Min Max
V
T+
Positive Threshold
Voltage
1.65 0.79 1.16 1.16 1.16
V
2.3 1.11 1.56 1.56 1.56
3.0 1.5 1.87 1.87 1.87
4.5 2.16 2.74 2.74 2.74
5.5 2.61 3.33 3.33 3.33
V
T−
Negative
Threshold
Voltage
1.65 0.35 0.62 0.35 0.35
V
2.3 0.58 0.87 0.58 0.58
3.0 0.84 1.19 0.84 0.84
4.5 1.41 1.9 1.41 1.41
5.5 1.78 2.29 1.78 1.78
V
H
Hysteresis Voltage
1.65 0.30 0.62 0.30 0.62 0.30 0.62
V
2.3 0.40 0.8 0.40 0.8 0.40 0.8
3.0 0.53 0.87 0.53 0.87 0.53 0.87
4.5 0.71 1.04 0.71 1.04 0.71 1.04
5.5 0.8 1.2 0.8 1.2 0.8 1.2
V
OH
Minimum
High−Level Output
Voltage
V
IN
v V
T−MIN
I
OH
= −50 mA
1.65 −
5.5
V
CC
− 0.1
V
CC
− 0.1
V
CC
− 0.1
V
V
IN
v V
T−MIN
I
OH
= −4 mA 1.65 1.2 1.2 1.2
I
OH
= −8 mA 2.3 1.9 1.9 1.9
I
OH
= −16 mA 3.0 2.4 2.4 2.4
I
OH
= −24 mA 3.0 2.3 2.3 2.3
I
OH
= −32 mA 4.5 3.8 3.8 3.8
V
OL
Maximum
Low−Level Output
Voltage
V
IN
w V
T+MAX
I
OL
= 50 mA
1.65 −
5.5
0.1 0.1 0.1 V
V
IN
w V
T+MAX
I
OL
= 4 mA 1.65 0.45 0.45 0.45
I
OL
= 8 mA 2.3 0.3 0.3 0.3
I
OL
= 16 mA 3.0 0.4 0.4 0.4
I
OL
= 24 mA 3.0 0.55 0.55 0.55
I
OL
= 32 mA 4.5 0.55 0.55 0.55
I
IN
Input Leakage
Current
0 v V
IN
v
5.5 V
0 to
5.5
$0.1 $1.0 $1.0
mA
I
CC
Quiescent Supply
Current
0 v V
IN
v V
CC
5.5 1.0 10 10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NL7SZ97
http://onsemi.com
6
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0 ns)
Symbol
Parameter V
CC
(V) Test Condition
T
A
= 255C T
A
v +855C
T
A
= −555C
to +1255C
Unit
Min Typ Max Min Max Min Max
t
PLH
,
t
PHL
Propagation Delay,
Any Input to Output
Y (See Test Circuit)
1.65 − 1.95 3.2 8.6 14.4 3.2 14.4 3.2 14.4
ns
2.3 − 2.7 2.0 5.1 8.3 2.0 8.3 2.0 8.3
3.0 − 3.6 1.5 3.9 6.3 1.5 6.3 1.5 6.3
4.5 − 5.5 1.1 3.3 5.1 1.1 5.1 1.1 5.1
C
IN
Input Capacitance 3.5 pF
C
PD
Power Dissipation
Capacitance
(Note 7)
5.0 f = 10 MHz 22 pF
7. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation I
CC(OPR)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load
dynamic power consumption: P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC.
TEST CIRCUIT AND VOLTAGE WAVEFORMS
Figure 9. Load Circuit
R
L
C
L
*
From Output
Under Test
GND
Open
V
LOAD
R
L
*C
L
includes probes and jig capacitance.
Test
S1
t
PLH
/t
PHL
Open
t
PLZ
/t
PZL
V
LOAD
t
PHZ
/t
PZH
GND
V
CC
Inputs
V
M
V
LOAD
C
L
R
L
V
D
V
I
t
r
/t
f
1.8 V $ 0.15 V V
CC
v 2 ns V
CC
/2 2 x V
CC
30 pF
1 kW
0.15 V
2.5 V $ 0.2 V V
CC
v 2 ns V
CC
/2 2 x V
CC
30 pF
500 W
0.15 V
3.3 V $ 0.3 V 3 V v 2.5 ns 1.5 V 6 V 50 pF
500 W
0.3 V
5.5 V $ 0.5 V V
CC
v 2.5 ns V
CC
/2 2 x V
CC
50 pF
500 W
0.3 V

NLV7SZ97DFT2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Logic Gates FLEXIBLE CHOICE
Lifecycle:
New from this manufacturer.
Delivery:
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