SQ1912EH
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Vishay Siliconix
S17-0425 Rev. B, 27-Mar-17
2
Document Number: 67394
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Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0, I
D
= 250 μA 20 - -
V
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 0.45 0.6 1.5
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 8 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
GS
= 0 V V
DS
= 20 V - - 1
μA V
GS
= 0 V V
DS
= 20 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 20 V, T
J
= 175 °C - - 150
On-state drain current
a
I
D(on)
V
GS
= 4.5 V V
DS
5 V 1.5 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 4.5 V I
D
= 1.2 A - 0.200 0.280
V
GS
= 4.5 V I
D
= 1.2 A, T
J
= 125 °C - - 0.423
V
GS
= 4.5 V I
D
= 1.2 A, T
J
= 175°C - - 0.510
V
GS
= 2.5 V I
D
= 1 A - 0.261 0.360
V
GS
= 1.8 V I
D
= 0.2 A - 0.320 0.450
Forward transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.5 A - 2.6 - S
Dynamic
b
Input capacitance C
iss
V
GS
= 0 V V
DS
= 10 V, f = 1 MHz
-4975
pF Output capacitance C
oss
-2232
Reverse transfer capacitance C
rss
-812
Total gate charge
c
Q
g
V
GS
= 4.5 V V
DS
= 10 V, I
D
= 1.2 A
-0.761.15
nC Gate-source charge
c
Q
gs
-0.13-
Gate-drain charge
c
Q
gd
-0.33-
Gate resistance
d
R
g
f = 1 MHz 5.5 11.1 22.2
Turn-on delay time
c
t
d(on)
V
DD
= 10 V, R
L
= 20
I
D
0.5 A, V
GEN
= 4.5 V, R
g
= 1
-35
ns
Rise time
c
t
r
-2131
Turn-off delay time
c
t
d(off)
-1929
Fall time
c
t
f
-1725
Source-Drain Diode Ratings and Characteristics
b
Pulsed current
a
I
SM
--3A
Forward voltage V
SD
I
F
= 0.5 A, V
GS
= 0 - 0.8 1.2 V
