FDC3616N Rev C1 (W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
DSS
Drain-Source Avalanche Energy
Single Pulse,V
DD
= 50 V, I
D
=
3.7A
244 mJ
I
AR
Drain-Source Avalanche Current 3.7 A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
100
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C
114
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 80 V, V
GS
= 0 V 10
µA
I
DSS
Zero Gate Voltage Drain Current V
DS
= 30 V, V
GS
= 0 V 1
µA
I
GSSF
Gate–Body Leakage, Forward V
GS
= 20 V, V
DS
= 0 V 100 nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= –20 V, V
DS
= 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
2 2.5 4 V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, Referenced to 25°C
–7.4
mV/°C
R
DS(on)
Static Drain–Source
On Resistance
V
GS
= 10 V, I
D
= 3.7 A
V
GS
= 6.0 V, I
D
= 3.5 A
V
GS
= 10 V, I
D
= 3.7 A, T
J
= 125°C
55
58
104
70
80
139
mΩ
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 3.7 A 19 S
Dynamic Characteristics
C
iss
Input Capacitance 1215 pF
C
oss
Output Capacitance 72 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 50 V, V
GS
= 0 V,
f = 1.0 MHz
39 pF
R
G
Gate Resistance V
GS
= 15 mV, f = 1.0 MHz 1.1
Ω
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 9 18 ns
t
r
Turn–On Rise Time 4 8 ns
t
d(off)
Turn–Off Delay Time 28 45 ns
t
f
Turn–Off Fall Time
V
DD
= 50 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6 Ω
10 20 ns
Q
g
Total Gate Charge 23 32 nC
Q
gs
Gate–Source Charge 4.8 nC
Q
gd
Gate–Drain Charge
V
DS
= 50 V, I
D
= 3.7 A,
V
GS
= 10 V
5.4 nC
FDC3616N
