NXP Semiconductors
BGU8052
Low noise high linearity amplifier
BGU8052 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2017. All rights reserved.
Product data sheet Rev. 6 — 8 June 2017
COMPANY PUBLIC 11 / 16
Table 10. Typical performance BGU8052 application boardV
CC
= 5 V
All RF parameters are measured at the application board as shown in Figure 16 with the components as listed in Table 9
while optimized for: f = 1900 MHz; V
CC
= 5 V; I
CC
= 48 mA and T
amb
= 25 °C.
f (MHz)Symbol Parameter Conditions
1500 1750 1850 1900 1950 2100 2300 2500
G gain 20.5 19.2 18.7 18.4 18.2 17.6 16.8 16.0
RL
in
input return loss 12.4 13.8 14.3 14.5 14.7 15.2 16.0 16.5
RL
out
output return loss 23.0 23.7 23.4 23.2 23.0 22.5 22.0 22.0
P
L(1dB)
output power at 1 dB gain
compression
18.5 18.9 18.5 19.0 18.0 18.8 18.2 17.2
[1]
36.8 36.2 36.3 36.3 36.0 36.3 35.6 35.4IP3
O
output third-order intercept
point
[1]
[2]
37.5 37.4 37.2 37.0 36.7 35.7 36.5 35.3
NF noise figure
[3]
0.44 0.43 0.46 0.48 0.49 0.53 0.57 0.61
[1] 2-Tone; tone spacing = 1 MHz, P
o
= 5 dBm per tone.
[2] For applications where fast switching is required, the value of C1 and C2 should be changed to 100 pF.
[3] Connector and board losses not de-embedded.
Table 11. Typical performance BGU8052 application board V
CC
= 3.3 V
All RF parameters measured at application board shown in Figure 16. The components listed in Table 9 optimized for 1900
MHz; V
CC
=3.3 V; I
CC
= 48 mA; T
amb
= 25 °C.
f (MHz)Symbol Parameter Conditions
1500 1750 1850 1900 1950 2100 2300 2500
G gain 20.5 19.2 18.7 18.4 18.2 17.6 16.8 16.5
RL
in
input return loss 12.3 13.9 14.5 14.7 14.5 14.8 15.3 15.5
RL
out
output return loss 21.6 23.5 24.0 23.8 23.3 22.6 21.2 20.4
P
L(1dB)
output power at 1 dB gain
compression
16.2 16.0 16.0 16.2 15.8 15.8 15.5 14.9
[1]
33.3 32.9 31.9 32.5 32.0 31.6 30.6 31.1IP3
O
output third-order intercept
point
[1]
[2]
31.8 31.6 31.2 31.0 31.2 30.6 30.5 29.5
NF noise figure
[3]
0.42 0.47 0.48 0.49 0.50 0.53 0.56 0.58
[1] 2 tone; spacing 1 MHz, P
o
= 5 dBm per tone.
[2] For applications where fast switching is required, the value of C1 and C2 should be changed to 100 pF.
[3] Connector and board losses not de-embedded.
