© Semiconductor Components Industries, LLC, 2006
May, 2006 Rev. 1
1 Publication Order Number:
NCS2535/D
NCS2535
Triple 1.4 GHz Current
Feedback Op Amp with
Enable Feature
NCS2535 is a triple 1.4 GHz current feedback monolithic
operational amplifier featuring high slew rate and low differential gain
and phase error. The current feedback architecture allows for a
superior bandwidth and low power consumption. This device features
an enable pin.
Features
3.0 dB Small Signal BW (A
V
= +2.0, V
O
= 0.5 V
pp
) 1.4 GHz Typ
Slew Rate 2500 V/ms
Supply Current 12 mA per Amplifier
Input Referred Voltage Noise 5.0 nV/ Hz
Ǹ
THD 69 dB (f = 5.0 MHz, V
O
= 2.0 V
pp
)
Output Current 120 mA
Enable Pin Available
This is a PbFree Device
Applications
High Resolution Video
Line Driver
HighSpeed Instrumentation
Wide Dynamic Range IF Amp
Figure 1. Frequency Response:
Gain (dB) vs. Frequency
Av = +2.0
V
OUT
= 2.0 V
PP
V
OUT
= 0.5 V
PP
0
6
9
12
15
10k 1M 10M 1G
NORMALIZED GAIN (dB)
FREQUENCY (Hz)
3
6
A
V
= +2
V
S
= ±5 V
R
F
= 330 W
R
L
= 150 W
100k 100M 10G
V
OUT
= 1.0 V
PP
3
*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
MARKING
DIAGRAM
TSSOP16
DT SUFFIX
CASE 948F
NCS2535 = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
1
2
3
4
IN1
+IN1
V
EE1
IN2
V
CC1
OUT1
EN1
(Top View)
TSSOP16 PINOUT
+
16
1
NCS
2535
ALYWG
G
5
6
7
8
+IN2
V
EE2
IN3
+IN3
10
9
OUT2
V
CC2
OUT3
11
12
13
14
15
16
+
+
Device Package Shipping
ORDERING INFORMATION
TSSOP16 96 Units/RailNCS2535DTG
TSSOP16 2500 Tape & ReelNCS2535DTR2G
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
EN3
EN2
NCS2535
http://onsemi.com
2
PIN FUNCTION DESCRIPTION
Pin Symbol Function Equivalent Circuit
9, 12, 15 OUTx Output
V
CC
OUT
V
EE
ESD
3, 6 V
EE
Negative Power Supply
2, 5, 8 +INx Noninverted Input
V
CC
IN
V
EE
+IN
ESDESD
1, 4, 7 INx Inverted Input See Above
11, 14 V
CC
Positive Power Supply
10, 13, 16 EN Enable
V
CC
EN
V
EE
ESD
ENABLE PIN TRUTH TABLE
High Low*
Enable Disabled Enabled
*Default open state
Figure 2. Simplified Device Schematic
+IN
C
C
OUT
V
CC
V
EE
IN
NCS2535
http://onsemi.com
3
ATTRIBUTES
Characteristics Value
ESD
Human Body Model
Machine Model
Charged Device Model
2.0 kV (Note 1)
200 V
1.0 kV
Moisture Sensitivity (Note 2) Level 1
Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 @ 0.125 in
1. 0.8 kV between the input pairs +IN and IN pins only. All other pins are 2.0 kV.
2. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter Symbol Rating Unit
Power Supply Voltage V
S
11 Vdc
Input Voltage Range V
I
vV
S
Vdc
Input Differential Voltage Range V
ID
vV
S
Vdc
Output Current I
O
120 mA
Maximum Junction Temperature (Note 3) T
J
150 °C
Operating Ambient Temperature T
A
40 to +85 °C
Storage Temperature Range T
stg
60 to +150 °C
Power Dissipation P
D
(See Graph) mW
Thermal Resistance, JunctiontoAir
R
q
JA
156 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
3. Power dissipation must be considered to ensure maximum junction temperature (T
J
) is not exceeded.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated is
limited by the associated rise in junction temperature. For
the plastic packages, the maximum safe junction
temperature is 150°C. If the maximum is exceeded
momentarily, proper circuit operation will be restored as
soon as the die temperature is reduced. Leaving the device
in the “overheated’’ condition for an extended period can
result in device damage. To ensure proper operation, it is
important to observe the derating curves.
Figure 3. Power Dissipation vs. Temperature
1400
1000
800
600
400
0
50 25 100 150
Maximum Power Dissapation (mW)
Ambient Temperature (C)
1200
200
25 0 75 12550
1800
1600

NCS2535DTBG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC OPAMP CFA 1.4GHZ 16TSSOP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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