1
AT49F1025
PLCC Top View
7
8
9
10
11
12
13
14
15
16
17
39
38
37
36
35
34
33
32
31
30
29
I/O12
I/O11
I/O10
I/O9
I/O8
GND
NC
I/O7
I/O6
I/O5
I/O4
A13
A12
A11
A10
A9
GND
NC
A8
A7
A6
A5
6
5
4
3
2
1
44
43
42
41
40
18
19
20
21
22
23
24
25
26
27
28
I/O3
I/O2
I/O1
I/O0
OE
NC
A0
A1
A2
A3
A4
I/O13
I/O14
I/O15
CE
NC
NC
VCC
WE
NC
A15
A14
Features
Single-voltage Operation
–5V Read
5V Reprogramming
Fast Read Access Time – 35 ns
Internal Program Control and Timer
8K Word Boot Block with Lockout
Fast Erase Cycle Time – 10 seconds
Word-by-word Programming – 10 µs/Word Typical
Hardware Data Protection
Data Polling for End of Program Detection
Small 10 x 14 mm VSOP Package
Typical 10,000 Write Cycles
Description
The AT49F1024 and the AT49F1025 are 5-volt-only in-system Flash memories. Their
1 megabit of memory is organized as 65,536 words by 16 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to
35 ns with power dissipation of just 275 mW over the commercial temperature range.
When the device is deselected, the CMOS standby current is less than 100 µA. The
only difference between the AT49F1024 and the AT49F1025 is the package.
To allow for simple in-system reprogrammability, the AT49F1024/1025 does not
require high-input voltages for programming. Five-volt-only commands determine the
Rev. 0765I–05/01
1-megabit
(64K x 16)
5-volt Only
Flash Memory
AT49F1024
AT49F1025
Pin Configurations
Pin Name Function
A0 - A15 Addresses
CE
Chip Enable
OE
Output Enable
WE Write Enable
I/O0 - I/O15 Data Inputs/Outputs
NC No Connect
(continued)
AT49F1024 VSOP Top View
Type 1
10 x 14 mm
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A9
A10
A11
A12
A13
A14
A15
NC
WE
VCC
NC
CE
I/O15
I/O14
I/O13
I/O12
I/O11
I/O10
I/O9
I/O8
GND
A8
A7
A6
A5
A4
A3
A2
A1
A0
OE
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND
2
AT49F1024/1025
0765I05/01
read and programming operation of the device. Reading data out of the device is similar
to reading from an EPROM. Reprogramming the AT49F1024/1025 is performed by
erasing a block of data (entire chip or main memory block) and then programming on a
word-by-word basis. The typical word programming time is a fast 10 µs. The end of a
program cycle can be optionally detected by the Data
Polling feature. Once the end of a
byte program cycle has been detected, a new access for a read or program can begin.
The typical number of program and erase cycles is in excess of 10,000 cycles.
The optional 8K word boot block section includes a reprogramming write lockout feature
to provide data integrity. The boot sector is designed to contain user secure code, and
when the feature is enabled, the boot sector is permanently protected from being erased
or reprogrammed.
Block Diagram
Device Operation
READ: The AT49F1024/1025 is accessed like an EPROM. When CE and OE are low
and WE
is high, the data stored at the memory location determined by the address pins
is asserted on the outputs. The outputs are put in the high impedance state whenever
CE
or OE is high. This dual line control gives designers flexibility in preventing bus
contention.
CHIP ERASE: When the boot block programming lockout feature is not enabled, the
boot block and the main memory block will erase together from the same Chip Erase
command (See Command Definitions table). If the boot block lockout function has been
enabled, data in the boot section will not be erased. However, data in the main memory
section will be erased. After a chip erase, the device will return to the read mode.
MAIN MEMORY ERASE: As an alternative to the chip erase, a main memory block
erase can be performed, which will erase all words not located in the boot block region
to an FFFFH. Data located in the boot region will not be changed during a main memory
block erase. The Main Memory Erase command is a six-bus cycle operation. The
address (5555H) is latched on the falling edge of the sixth cycle while the 30H data input
is latched on the rising edge of WE
. The main memory erase starts after the rising edge
of WE
of the sixth cycle. Please see main memory erase cycle waveforms. The main
memory erase operation is internally controlled; it will automatically time to completion.
WORD PROGRAMMING: Once the memory array is erased, the device is programmed
(to a logic 0) on a word-by-word basis. Please note that a data 0 cannot be
programmed back to a 1; only erase operations can convert 0s to 1s. Programming
is accomplished via the internal device command register and is a four-bus cycle
OE, CE, AND WE
LOGIC
Y DECODER
X DECODER
INPUT/OUTPUT
BUFFERS
DATA LATCH
Y-GATING
OPTIONAL BOOT
BLOCK (8K WORDS)
MAIN MEMORY
(56K WORDS)
OE
WE
CE
ADDRESS
INPUTS
VCC
GND
DATA INPUTS/OUTPUTS
I/O15 - I/O0
16
2000H
1FFFH
0000H
FFFFH
3
AT49F1024/1025
0765I05/01
operation (please refer to the Command Definitions table). The device will automatically
generate the required internal program pulses.
The program cycle has addresses latched on the falling edge of WE or CE, whichever
occurs last, and the data latched on the rising edge of WE
or CE, whichever occurs first.
Programming is completed after the specified t
BP
cycle time. The Data Polling feature
may also be used to indicate the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT: The device has one designated block
that has a programming lockout feature. This feature prevents programming of data in
the designated block once the feature has been enabled. The size of the block is 8K
words. This block, referred to as the boot block, can contain secure code that is used to
bring up the system. Enabling the lockout feature will allow the boot code to stay in the
device while data in the rest of the device is updated. This feature does not have to be
activated; the boot blocks usage as a write-protected region is optional to the user. The
address range of the boot block is 0000H to 1FFFH.
Once the feature is enabled, the data in the boot block can no longer be erased or pro-
grammed. Data in the main memory block can still be changed through the regular
programming method and can be erased using either the Chip Erase or the Main Mem-
ory Block Erase command. To activate the lockout feature, a series of six program
commands to specific addresses with specific data must be performed. Please refer to
the Command Definitions table.
BOOT BLOCK LOCKOUT DETECTION: A software method is available to determine if
programming of the boot block section is locked out. When the device is in the software
product identification mode (see Software Product Identification Entry and Exit sec-
tions), a read from address location 0002H will show if programming the boot block is
locked out. If the data on I/O0 is low, the boot block can be programmed; if the data on
I/O0 is high, the program lockout feature has been activated and the block cannot be
programmed. The software product identification exit code should be used to return to
standard operation.
PRODUCT IDENTIFICATION: The product identification mode identifies the device and
manufacturer as Atmel. It may be accessed by hardware or software operation. The
hardware operation mode can be used by an external programmer to identify the correct
programming algorithm for the Atmel product.
For details, see Operating Modes (for hardware operation) or Software Product Identifi-
cation. The manufacturer and device code is the same for both modes.
DATA
POLLING: The AT49F1024/1025 features Data Polling to indicate the end of a
program or erase cycle. During a program cycle, an attempted read of the last byte
loaded will result in the complement of the loaded data on I/O7. Once the program cycle
has been completed, true data is valid on all outputs and the next cycle may begin. Data
Polling may begin at any time during the program cycle.
TOGGLE BIT: In addition to Data
Polling, the AT49F1024/1025 provides another
method for determining the end of a program or erase cycle. During a program or erase
operation, successive attempts to read data from the device will result in I/O6 toggling
between one and zero. Once the program cycle has completed, I/O6 will stop toggling
and valid data will be read. Examining the toggle bit may begin at any time during a pro-
gram cycle.
HARDWARE DATA PROTECTION: Hardware features protect against inadvertent pro-
grams to the AT49F1024/1025 in the following ways: (a) V
CC
sense: if V
CC
is below 3.8V
(typical), the program function is inhibited. (b) Program inhibit: holding any one of OE
low, CE high or WE high inhibits program cycles. (c) Noise filter: pulses of less than 15
ns (typical) on the WE
or CE inputs will not initiate a program cycle.

AT49F1024-70VC

Mfr. #:
Manufacturer:
Description:
IC FLASH 1M PARALLEL 40VSOP
Lifecycle:
New from this manufacturer.
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