OMO ElectronicOMO Electronic
Expand menu
0 Cart

AT49F1024-70VI

P1-P3P4-P6P7-P9P10-P12P13-P15
7
AT49F1024/1025
0765I–05/01
Input Test Waveforms and Measurement Level
t
R
, t
F
< 5 ns
Output Test Load
Note: 1. This parameter is characterized and is not 100% tested.
OUTPUT
PIN
5.0V
30 pF
1.8K
1.3K
Pin Capacitance
f = 1 MHz, T = 25°C
(1)
Symbol Typ Max Units Conditions
C
IN
46pFV
IN
= 0V
C
OUT
812pFV
OUT
= 0V
8
AT49F1024/1025
0765I–05/01
AC Word Load Waveforms
WE Controlled
CE
Controlled
AC Word Load Characteristics
Symbol Parameter Min Max Units
t
AS
, t
OES
Address, OE Setup Time 0 ns
t
AH
Address Hold Time 50 ns
t
CS
Chip Select Setup Time 0 ns
t
CH
Chip Select Hold Time 0 ns
t
WP
Write Pulse Width (WE or CE)50ns
t
DS
Data Setup Time 50 ns
t
DH
, t
OEH
Data, OE Hold Time 0 ns
t
WPH
Write Pulse Width High 40 ns
t
DH
t
DS
t
AS
t
AH
t
WP
CE
ADDRESS
DATA IN
OE
t
OES
t
OEH
WE
t
CS
t
CH
t
WPH
t
DH
t
DS
t
AS
t
AH
t
WP
WE
ADDRESS
DATA IN
OE
t
OES
t
OEH
CE
t
CS
t
CH
t
WPH
9
AT49F1024/1025
0765I–05/01
Program Cycle Waveforms
Main Memory or Chip Erase Cycle Waveforms
Notes: 1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 10H. For a main memory erase, the data should be 30H.
Program Cycle Characteristics
Symbol Parameter Min Typ Max Units
t
BP
Word Programming Time 10 50 µs
t
AS
Address Setup Time 0 ns
t
AH
Address Hold Time 50 ns
t
DS
Data Setup Time 50 ns
t
DH
Data Hold Time 0 ns
t
WP
Write Pulse Width 50 ns
t
WPH
Write Pulse Width High 40 ns
t
EC
Erase Cycle Time 3 seconds
A0-A15
OE
AA
80
NOTE 2
55 55
5555
5555
5555
AA
WORD 0
WORD 1 WORD 2
WORD 3
WORD 4
WORD 5
2AAA 2AAA
t
WPH
t
WP
CE
WE
A0-A15
DATA
t
AS
t
AH
t
EC
t
DH
t
DS
5555
P1-P3P4-P6P7-P9P10-P12P13-P15

AT49F1024-70VI

Mfr. #:
Buy AT49F1024-70VI
Manufacturer:
Description:
IC FLASH 1M PARALLEL 40VSOP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet