BA783-HG3-18

BA782-G, BA783-G
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 14-May-14
1
Document Number: 85240
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Band Switching Diodes
MECHANICAL DATA
Case: SOD-123
Weight: approx. 9.4 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
Silicon epitaxial planar diode switches
AEC-Q101 qualified
Base P/N-G3 - green, commercial grade
Base P/N-HG3 - green, AEC-Q101 qualified
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION
For electric bandswitching in radio and TV tuners in the
frequency range of (50 to 1000) MHz. The dynamic forward
resistance is constant and very small over a wide range of
frequency and forward current. The reverse capacitance is
also small and largely independent of the reverse voltage.
PARTS TABLE
PART ORDERING CODE TYPE MARKING REMARKS
BA782-G
BA782-G3-08 or BA782-G3-18
R4 Tape and reel
BA782-HG3-08 or BA782-HG3-18
BA783-G
BA783-G3-08 or BA783-G3-18
R5 Tape and reel
BA783-HG3-08 or BA783-HG3-18
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Reverse voltage V
R
35 V
Forward continuous current I
F
100 mA
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction temperature T
j
125 °C
Storage temperature range T
stg
- 55 to + 150 °C
Operating temperature range T
op
- 55 to + 125 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 100 mA V
F
1000 mV
Reverse current V
R
= 20 V I
R
50 nA
Diode capacitance
f = 1 MHz, V
R
= 1 V C
D1
1.5 pF
f = 1 MHz, V
R
= 3 V
BA782-G C
D2
1.25 pF
BA783-G C
D2
1.2 pF
Dynamic forward resistance
f = (50 to 1000) MHz, I
F
= 3 mA
BA782-G r
f1
0.7
BA783-G r
f1
1.2
f = (50 to 1000) MHz, I
F
= 10 mA
BA782-G r
f2
0.5
BA783-G r
f2
0.9
Series inductance across case L
S
2.5 nH
BA782-G, BA783-G
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 14-May-14
2
Document Number: 85240
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Diode Capacitance Fig. 2 - Dynamic Forward Resistance vs. Forward Current
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
T
j
= 25 °C
f = 1 MHz
18798
1100.1
0.8
0.6
0.4
1.4
1.2
1.0
0.2
0
100
C
D
- Diode Capacitance (pF)
V
R
- Reverse Voltage (V)
2.0
1.8
1.6
r
f
- Dynamic Forward Resistance (Ω)
1
10
0.1
1 10010
I
F
- Forward Current (mA)
BA782-G
100 MHz
BA783-G
100 MHz
BA782-G, BA783-G
1 kHz
T
amb
= 25 °C
0.1 (0.004) max.
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
1.7 (0.067)
1.40 (0.055)
Mounting Pad Layout
2.5 (0.098)
0.85 (0.033) 0.85 (0.033)
0.85 (0.033)
Cathode bar
0.65 (0.026)
0.45 (0.018)
0.10 (0.004)
1 (0.039)
0.15 (0.006)
1.35 (0.053)
0.2 (0.008)
0° to 8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Legal Disclaimer Notice
www.vishay.com
Vishay
Revision: 02-Oct-12
1
Document Number: 91000
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BA783-HG3-18

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Diodes - General Purpose, Power, Switching 35 Volt 100mA Band AUTO
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union