NXP Semiconductors
NX7002AKW
60 V, single N-channel Trench MOSFET
NX7002AKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 11 July 2012 3 / 14
Symbol Parameter Conditions Min Max Unit
T
sp
= 25 °C - 1060 mW
T
j
junction temperature -55 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
Source-drain diode
I
S
source current T
amb
= 25 °C [1] - 170 mA
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
T
j
(°C)
- 75 17512525 75- 25
017aaa123
40
80
120
P
der
(%)
0
Fig. 1. Normalized total power dissipation as a
function of junction temperature
T
j
(°C)
- 75 17512525 75- 25
017aaa124
40
80
120
I
der
(%)
0
Fig. 2. Normalized continuous drain current as a
function of junction temperature
NXP Semiconductors
NX7002AKW
60 V, single N-channel Trench MOSFET
NX7002AKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 11 July 2012 4 / 14
017aaa482
V
DS
(V)
10
-1
10
2
101
10
-1
10
-2
1
I
D
(A)
10
-3
Limit R
DSon
= V
DS
/I
D
(1)
(2)
(3)
(4)
(5)
(6)
I
DM
= single pulse
(1) t
p
= 100 µs
(2) t
p
= 1 ms
(3) t
p
= 10 ms
(4) DC; T
sp
= 25 °C
(5) t
p
= 100 ms
(6) DC; T
amb
= 25 °C; drain mounting pad 1 cm
2
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 485 560 K/WR
th(j-a)
thermal resistance
from junction to
ambient
in free air
[2] - 420 480 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
- - 115 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
NXP Semiconductors
NX7002AKW
60 V, single N-channel Trench MOSFET
NX7002AKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 11 July 2012 5 / 14
017aaa483
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
-1
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa484
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
-1
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, mounting pad for drain 1 cm
2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C 60 - - V
V
GSth
gate-source threshold
voltage
I
D
= 250 µA; V
DS
= V
GS
; T
j
= 25 °C 1.1 1.6 2.1 V
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 °C - - 1 µAI
DSS
drain leakage current
V
DS
= 60 V; V
GS
= 0 V; T
j
= 150 °C - - 10 µA

NX7002AKW,115

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET N-CH 60V SOT323
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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