NXP Semiconductors
NX7002AKW
60 V, single N-channel Trench MOSFET
NX7002AKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 11 July 2012 3 / 14
Symbol Parameter Conditions Min Max Unit
T
sp
= 25 °C - 1060 mW
T
j
junction temperature -55 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
Source-drain diode
I
S
source current T
amb
= 25 °C [1] - 170 mA
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
T
j
(°C)
- 75 17512525 75- 25
017aaa123
40
80
120
P
der
(%)
0
Fig. 1. Normalized total power dissipation as a
function of junction temperature
T
j
(°C)
- 75 17512525 75- 25
017aaa124
40
80
120
I
der
(%)
0
Fig. 2. Normalized continuous drain current as a
function of junction temperature