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HUFA76619D3S

P1-P3P4-P6P7-P9P10-P10
©2001 Fairchild Semiconductor Corporation HUFA76619D3, HUFA76619D3S Rev. B
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
100µs
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED T
C
= 25
o
C
SINGLE PULSE
1
10
100
500
.1
1 10 100 200
0.001 0.01 0.1 1 1
0
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R ≠ 0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 150
o
C
10
100
1
500
2345
I
D,
DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
5
10
15
20
25
0
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 5V
V
GS
= 10V
V
GS
= 4V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
01234
V
GS
= 3.5V
T
c
= 25
o
C
6
12
18
24
30
0
24681
0
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
I
D
= 12A
I
D
= 6A
I
D
= 18A
60
80
90
100
110
70
-80 -40 0 40 80 120 160 200
NORMALIZED DRAIN TO SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESISTANCE
V
GS
= 10V, I
D
= 18A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
2.0
2.5
3.0
0.5
1.0
HUFA76619D3, HUFA76619D3S
©2002 Fairchild Semiconductor Corporation HUFA76619D3, HUFA76619D3S Rev. B
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.6
0.9
1.2
-80 -40 0 40 80 120 160 200
0.3
NORMALIZED GATE
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250µA
THRESHOLD VOLTAGE
1.0
1.1
1.2
-80 -40 0 40 80 120 160 200
0.9
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
100
2000
0.1 1.0 10
100
10
C, CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
OSS
≅ C
DS
+ C
GD
C
RSS
= C
GD
1000
2
4
6
8
10
0 5 10 15 20 2
5
0
V
GS
, GATE TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
V
DD
= 50V
I
D
= 18A
I
D
= 12A
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 6A
80
120
200
0 1020304050
0
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
V
GS
= 4.5V, V
DD
= 50V, I
D
= 12A
t
r
t
f
t
d(ON)
t
d(OFF)
160
40
40
80
160
200
0 1020304050
0
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
V
GS
= 10V, V
DD
= 50V, I
D
= 18A
t
r
t
d(ON)
t
f
t
d(OFF)
120
HUFA76619D3, HUFA76619D3S
©2001 Fairchild Semiconductor Corporation HUFA76619D3, HUFA76619D3S Rev. B
Test Circuits and Waveforms
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
FIGURE 21. SWITCHING TIME TEST CIRCUIT FIGURE 22. SWITCHING TIME WAVEFORM
t
P
V
GS
0.01Ω
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
V
DD
Q
g(TH)
V
GS
= 1V
Q
g(5)
V
GS
= 5V
Q
g(TOT)
V
GS
= 10
V
V
DS
V
GS
I
g(REF)
0
0
Q
gs
Q
gd
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
HUFA76619D3, HUFA76619D3S
P1-P3P4-P6P7-P9P10-P10

HUFA76619D3S

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ON Semiconductor
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MOSFET N-CH 100V 18A DPAK
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New from this manufacturer.
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