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SI1040X-T1-E3

P1-P3P4-P6P7-P8
Vishay Siliconix
Si1040X
Document Number: 71809
S10-2544-Rev. D, 08-Nov-10
www.vishay.com
1
Load Switch with Level-Shift
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 1.8 V to 8 V Input
• 1.5 V to 8 V Logic Level Control
• Smallest LITTLE FOOT
®
Package: 1.6 mm x 1.6 mm
• 2000 V ESD Protection On Input Switch, V
ON/OFF
• Adjustable Slew-Rate
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The Si1040X includes a p- and n-Channel MOSFET in a
single SC89-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a level-
shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si1040X operates on
supply lines from 1.8 V to 8 V, and can drive loads up to
0.43 A.
PRODUCT SUMMARY
V
DS2
(V) R
DS(on)
()I
D
(A)
1.8 to 8
0.625 at V
IN
= 4.5 V
± 0.43
0.890 at V
IN
= 2.5 V
± 0.36
1.25 at V
IN
= 1.8 V
± 0.3
SC89-6
Top View
6
4
1
2
3
5
S2
ON/OFF
R1, C1
D2
D2
R2
Ordering Information: Si1040X-T1-GE3 (Lead (Pb)-free and Halogen-free)
D2
S2
ON/OFF
R2
1
4
6
5
Q1
Q2
Si1040X
R1, C1
2, 3
Marking Code
PWL
Lot Traceability
and Date Code
Part Number Code
TYPICAL APPLICATION CIRCUIT
V
OUT
GND
LOAD
V
IN
ON/OFF
R2
R2
1
2, 3
C1
6
4
6
5
R1
Q1
Q2
Si1040X
C
o
C
i
Switching Variation R2 at V
IN
= 2.5 V, R1 = 20 kΩ
0
4
8
12
16
20
02468 10
R2 (kΩ)
I
L
= 0.36 A
V
ON/OFF
= 3 V
C
i
= 10 µF
C
o
= 1 µF
t
r
t
d(on)
t
d(off)
t
f
(µs)Time
Note: For R2 switching variations with other V
IN
/R1
combinations See Typical Characteristics
www.vishay.com
2
Document Number: 71809
S10-2544-Rev. D, 08-Nov-10
Vishay Siliconix
Si1040X
Notes:
a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-
on.
The Si1040X is ideally suited for high-side load switching in
portable applications. The integrated N-Channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Notes:
a. Surface mounted on FR4 board.
b. V
IN
= 8 V, V
ON/OFF
= 8 V, T
A
= 25 °C.
c. Pulse test; pulse width 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
COMPONENTS
R1 Pull-Up Resistor
Typical 10 k to 1 m
a
R2 Optional Slew-Rate Control
Typical 0 to 100 k
a
C1 Optional Slew-Rate Control Typical 1000 pF
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Input Voltage
V
IN
8
V
ON/OFF Voltage
V
ON/OFF
8
Load Current
Continuous
a, b
I
L
± 0.43
A
Pulsed
b, c
± 1.0
Continuous Intrinsic Diode Conduction
a
I
S
- 0.15
Maximum Power Dissipation
a
P
D
0.174 W
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 ) ESD 2 kV
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient (Continuous Current)
a
R
thJA
600 720
°C/W
Maximum Junction-to-Foot (Q2)
R
thJC
450 540
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
OFF Characteristics
Reverse Leakage Current
I
FL
V
IN
= 8 V, V
ON/OFF
= 0 V
1 µA
Diode Forward Voltage
V
SD
I
S
= - 0.15 A
0.85 1.2 V
ON Characteristics
Input Voltage Range
V
IN
1.8 8
V
On-Resistance (P-Channel) at 1 A
R
DS(on)
V
ON/OFF
= 1.5 V, V
IN
= 4.5 V, I
D
= 0.43 A
0.500 0.625
V
ON/OFF
= 1.5 V, V
IN
= 2.5 V, I
D
= 0.36 A
0.710 0.890
V
ON/OFF
= 1.5 V, V
IN
= 1.8 V, I
D
= 0.3 A
1.0 1.25
On-State (P-Channel) Drain Current
I
D(on)
V
IN-OUT
0.2 V, V
IN
= 5 V, V
ON/OFF
= 1.5 V
1
A
V
IN-OUT
0.3 V, V
IN
= 3 V, V
ON/OFF
= 1.5 V
0.8
Document Number: 71809
S10-2544-Rev. D, 08-Nov-10
www.vishay.com
3
Vishay Siliconix
Si1040X
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
V
DROP
vs. I
L
at V
IN
= 4.5 V
V
DROP
vs. I
L
at V
IN
= 1.8 V
V
DROP
Variance vs. Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
I
L
- (A)
(V)V
DROP
V
ON/OFF
= 1.5 V to 8 V
T
J
= 125 °C
T
J
= 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
I
L
- (A)
(V)V
DROP
V
ON/OFF
= 1.5 V to 8 V
T
J
= 125 °C
T
J
= 25 °C
- 0.15
- 0.10
- 0.05
0.00
0.05
0.10
0.15
0.20
- 50 - 25 0 25 50 75 100 125 150
Variance (V)
V
DROP
I
L
= 0.3 A
V
ON/OFF
= 1.8 V to 8 V
V
IN
= 4.5 V
V
IN
= 1.8 V
T
J
-Junction Temperature (°C)
V
DROP
vs. I
L
at V
IN
= 2.5 V
V
DROP
vs. I
L
at V
IN
= 0.5 V
On-Resistance vs. Input Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
I
L
- (A)
(V)V
DROP
V
ON/OFF
= 1.5 V to 8 V
T
J
= 125 °C
T
J
= 25 °C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
012345
V
IN
(V)
(V)V
DROP
V
ON/OFF
= 1.5 V to 8 V
T
J
= 125 °C
T
J
= 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
012345
- On-Resistance (Ω)
R
SS(on)
V
IN
(V)
I
L
= 0.3 A
V
ON/OFF
= 1.5 V to 8 V
T
J
= 125 °C
T
J
= 25 °C
P1-P3P4-P6P7-P8

SI1040X-T1-E3

Mfr. #:
Buy SI1040X-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI1040X-T1-GE3
Lifecycle:
New from this manufacturer.
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