IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA42N15T
IXTP42N15T
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1 20 33 S
C
iss
1880 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 255 pF
C
rss
37 pF
t
d(on)
14 ns
t
r
16 ns
t
d(off)
50 ns
t
f
25 ns
Q
g(on)
21 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
6.0 nC
Q
gd
6.6 nC
R
thJC
0.75 °C/W
R
thCH
TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0V 42 A
I
SM
Repetitive, Pulse width limited by T
JM
126 A
V
SD
I
F
= 21A, V
GS
= 0V, Note 1 1.1 V
t
rr
100 ns
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5mm or less from the package body.
Resistive Switching Times
V
GS
= 15V, V
DS
=0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 10Ω (External)
I
F
= 25A, V
GS
= 0V, -di/dt = 100A/μs, V
R
= 50V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
TO-263 (IXTA) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
TO-220 (IXTP) Outline
