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AUIRGR4045D

P1-P3P4-P6P7-P9P10-P12P13-P15
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
AUIRGR4045D
AUIRGU4045D
1 www.irf.com
02/14/11
V
CES
= 600V
I
C
= 6.0A, T
C
= 100°C
V
CE(on) typ.
= 1.7V
Features
• Low V
CE (on)
Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5µs SCSOA
• Square RBSOA
• 100% of the parts tested for I
LM
• Positive V
CE (on)
Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free, RoHS Compliant
• Automotive Qualified*
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low V
CE (ON)
and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
PD - 97637
AUTOMOTIVE GRADE
Parameter
Max.
Units
V
CES
Collector-to-Emitter Breakdown Voltage V
I
C
@ T
C
= 25°C Continuous Collector Current
I
C
@ T
C
= 100°C Continuous Collector Current
I
CM
Pulsed Collector Current, V
GE
= 15V
I
LM
Clamped Inductive Load Current, V
GE
= 20V A
I
F
@T
C
=25°C Diode Continuous Forward Current
I
F
@T
C
=100°C Diode Continuous Forward Current
I
FM
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage V
Transient Gate-to-Emitter Voltage
P
D
@ T
C
=25° Maximum Power Dissipation W
P
D
@ T
C
=100° Maximum Power Dissipation
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case - IGBT
––– ––– 1.9
R
θ
JC
Junction-to-Case - Diode
––– ––– 6.8
R
θJA
Junction-to-Ambient (PCB Mount)
––– ––– 50
R
θ
JA
Junction-to-Ambient
––– ––– 110
-55 to + 175
300 (0.063 in. (1.6mm) from case)
± 20
± 30
77
39
°C/W
V
GE
600
12
6.0
18
24
8.0
4.0
24
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
*Qualification standards can be found at http://www.irf.com/
E
G
n-channel
C
GCE
Gate Colletor Emitter
D-Pak
AUIRGR4045D
I-Pak
AUIRGU4045D
G
C
E
G
C
E
AUIRGR/U4045D
2 www.irf.com
Notes:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 1.0mH, R
G
= 47Ω.
Pulse width limited by max. junction temperature.
R
θ
is measured at T
J
approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended
footprint and soldering techniques refer to application note #AN-994.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ref.Fig
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600 — — V
V
GE
= 0V, I
c
=100 µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
—0.36—V/°C
V
GE
= 0V, I
c
= 250µA ( 25 -175
o
C )
—1.72.0 I
C
= 6.0A, V
GE
= 15V, T
J
= 25°C
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.07 — V
I
C
= 6.0A, V
GE
= 15V, T
J
= 150°C
5,6,7,9,
—2.14— I
C
= 6.0A, V
GE
= 15V, T
J
= 175°C
10 ,11
V
GE(th)
Gate Threshold Voltage 3.5 — 6.5 V
V
CE
= V
GE
, I
C
= 150µA
∆
V
GE
(
th
)
/
∆
TJ
Threshold Voltage temp. coefficient —
-13
—mV/°C
V
CE
= V
GE
, I
C
= 250µA ( 25 -175
o
C )
gfe Forward Transconductance — 5.8 — S V
CE
= 25V, I
C
= 6.0A, PW =80µs
I
CES
——25µA
V
GE
= 0V,V
CE
= 600V
——250
V
GE
= 0V, V
CE
= 600V, T
J
=175°C
8
V
FM
—1.602.30 V
I
F
= 6.0A
—1.30— I
F
= 6.0A, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA
V
GE
= ± 20 V
Switchin
g
Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Ref.Fig
Q
g
Total Gate Charge (turn-on) — 13 19.5
I
C
= 6.0A
24
Q
ge
Gate-to-Emitter Charge (turn-on) — 3.1 4.65 nC
V
CC
= 400V
CT1
Q
gc
Gate-to-Collector Charge (turn-on) — 6.4 9.6
V
GE
= 15V
E
on
Turn-On Switching Loss — 56
86 I
C
= 6.0A, V
CC
= 400V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 122
143
µJ
R
G
= 47
Ω
, L=1mH, L
S
= 150nH, T
J
= 25°C
CT4
E
total
Total Switching Loss —
178 229
Energy losses include tail and diode reverse recovery
t
d(on)
Turn-On delay time —
27 35
I
C
= 6.0A, V
CC
= 400V
t
r
Rise time —
11 15
ns
R
G
= 47
Ω
, L=1mH, L
S
= 150nH
CT4
t
d(off)
Turn-Off delay time —
75 93 T
J
= 25°C
t
f
Fall time —
17 22
E
on
Turn-On Switching Loss — 140 —
I
C
= 6.0A, V
CC
= 400V, V
GE
= 15V
13,15
E
off
Turn-Off Switching Loss — 189 — µJ
R
G
= 47Ω, L=1mH, L
S
= 150nH, T
J
= 175°C
CT4
E
total
Total Switching Loss —
329
—
Energy losses include tail and diode reverse recovery
WF1,WF2
t
d(on)
Turn-On delay time —
26
—
I
C
= 6.0A, V
CC
= 400V
14,16
t
r
Rise time —
12
—ns
R
G
= 47
Ω
, L=1mH, L
S
= 150nH
CT4
t
d(off)
Turn-Off delay time —
95
—
T
J
= 175°C
WF1,WF2
t
f
Fall time —
32
—
C
ies
Input Capacitance — 350 —
V
GE
= 0V
23
C
oes
Output Capacitance — 29 —
V
CC
= 30V
C
res
Reverse Transfer Capacitance — 10 — f = 1Mhz
T
J
= 175°C, I
C
= 24A
4
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
V
CC
= 500V, Vp =600V
CT2
R
G
= 100Ω, V
GE
= +20V to 0V
V
CC
= 400V, Vp =600V
22
R
G
= 100
Ω
, V
GE
= +15V to 0V
CT3, WF4
Erec Reverse recovery energy of the diode
—
178
—
µJ T
J
= 175
o
C
17,18,19
trr
Diode Reverse recovery time
—
74
—
ns
V
CC
= 400V, I
F
= 6.0A
20,21
Irr Peak Reverse Recovery Current — 12 — A
V
GE
= 15V, Rg = 47
Ω
, L=1mH, L
S
=150nH
WF3
µs
pF
CT6
9,10,11,12
Conditions
—
Diode Forward Voltage Drop
Collector-to-Emitter Leakage Current
SCSOA Short Circuit Safe Operating Area 5—
AUIRGR/U4045D
www.irf.com 3
 Qualification standards can be found at International Rectifiers web site: http://www.irf.com
 Exceptions to AEC-Q101 requirements are noted in the qualification report.
 Highest passing voltage.
Qualification Information
†
Moisture Sensitivity Level
D-Pak
I-PAK
Charged Device Model
Class C5 (+/- 1000V)
†††
AEC-Q101-005
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
MSL1
RoHS Compliant Yes
ESD
Machine Model
Class M2 (+/- 200V)
†††
AEC-Q101-002
Human Body Model
Class H1A (+/- 500V)
†††
AEC-Q101-001
P1-P3P4-P6P7-P9P10-P12P13-P15

AUIRGR4045D

Mfr. #:
Buy AUIRGR4045D
Manufacturer:
Infineon / IR
Description:
IGBT Transistors 600V LO VCEON IGBT HALF BRIDGE 2 CH
Lifecycle:
New from this manufacturer.
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