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AUIRGU4045D
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
AUIRGR/U4045D
4
www.irf.com
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
Fig. 2
- Power Dissipation vs. Case
Temperature
Fig. 4
- Reverse Bias SOA
T
J
= 175°C, V
GE
= 20V
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
Fig. 3
- Forward SOA,
T
C
= 25°C, T
J
≤
175°C, V
GE
= 15V
0
20
40
60
80
100
120
140
160
180
T
C
(°C)
0
10
20
30
40
50
60
70
80
P
t
o
t
(
W
)
0
20
40
60
80
100
120
140
160
180
T
C
(°C)
0
2
4
6
8
10
12
14
I
C
(
A
)
10
100
1000
V
CE
(V)
0
1
10
100
I
C
A
)
1
10
100
1000
V
CE
(V)
0.1
1
10
100
I
C
(
A
)
10µsec
100µsec
Tc =
25°C
Tj
= 175°
C
Si
ngle P
ulse
DC
0
2
4
6
8
10
V
CE
(V)
0
5
10
15
20
I
C
E
(
A
)
Top
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
Bottom
V
GE
= 8.0V
0
2
4
6
8
10
V
CE
(V)
0
5
10
15
20
I
C
E
(
A
)
Top
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
Bottom
V
GE
= 8.0V
AUIRGR/U4045D
www.irf.com
5
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80µs
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80µs
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
0.0
1.0
2.0
3.0
V
F
(V)
0
2
4
6
8
10
12
14
16
18
20
I
F
(
A
)
-40°
C
25°C
175°C
5
1
01
52
0
V
GE
(V)
0
2
4
6
8
10
V
C
E
(
V
)
I
CE
= 3.
0A
I
CE
= 6.
0A
I
CE
= 12A
5
1
01
52
0
V
GE
(V)
0
2
4
6
8
10
V
C
E
(
V
)
I
CE
= 3.
0A
I
CE
= 6.
0A
I
CE
= 12A
5
1
01
52
0
V
GE
(V)
0
2
4
6
8
10
V
C
E
(
V
)
I
CE
= 3.
0A
I
CE
= 6.
0A
I
CE
= 12A
0
2
4
6
8
10
V
CE
(V)
0
5
10
15
20
I
C
E
(
A
)
Top
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
Bottom
V
GE
= 8.0V
4
6
8
1
01
21
41
6
V
GE,
Gate
-to-Em
itter Volta
ge
(V)
0
2
4
6
8
10
12
14
16
18
20
I
C
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
AUIRGR/U4045D
6
www.irf.com
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 1mH; V
CE
= 400V, R
G
= 47
Ω
; V
GE
= 15V.
Fig. 15
- Typ.
Energy Loss
vs. R
G
T
J
= 175°C; L = 1mH; V
CE
= 400V, I
CE
= 6.0A; V
GE
= 15V
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L=1mH; V
CE
= 400V
R
G
= 47
Ω
; V
GE
= 15V
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 175°C; L=1mH; V
CE
= 400V
I
CE
= 6.0A; V
GE
= 15V
Fig. 17
- Typical Diode I
RR
vs. I
F
T
J
= 175°C
Fig. 18
- Typical Diode I
RR
vs. R
G
T
J
= 175°C; I
F
= 6.0A
02468
1
0
1
2
1
4
I
C
(A)
50
100
150
200
250
300
350
400
E
n
e
r
g
y
(
µ
J
)
E
OFF
E
ON
2
4
6
8
10
12
14
I
C
(A)
1
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0
25
50
75
100
125
Rg (
Ω
)
60
80
100
120
140
160
180
200
220
E
n
e
r
g
y
(
µ
J
)
E
OFF
E
ON
0
25
50
75
100
125
R
G
(
Ω
)
1
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
2
4
6
8
10
12
14
I
F
(A
)
0
5
10
15
20
25
30
I
R
R
(
A
)
R
G =
10
Ω
R
G =
22
Ω
R
G =
47
Ω
R
G =
100
Ω
0
25
50
75
100
125
R
G
(
Ω)
6
8
10
12
14
16
18
20
22
I
R
R
(
A
)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
AUIRGU4045D
Mfr. #:
Buy AUIRGU4045D
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors DISCRETES
Lifecycle:
New from this manufacturer.
Delivery:
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