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NTR3C21NZT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2015
October, 2016 − Rev. 1
1 Publication Order Number:
NTR3C21NZ/D
NTR3C21NZ
Power MOSFET
20 V, 3.6 A, Single N−Channel
2.4 x 2.9 x 1.0 mm SOT−23 Package
Features
• Advanced Trench Technology
• Ultra−Low R
DS(on)
in SOT−23 Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Power Load Switch
• Power Management
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
20 V
Gate−to−Source Voltage V
GS
±8 V
Continuous Drain Current
(Note 1)
Steady
State
T
A
= 25°C
I
D
3.6
A
T
A
= 85°C 2.6
t ≤ 5 s T
A
= 25°C 6.5
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
0.47
W
t ≤ 5 s 1.56
Pulsed Drain Current
t
p
= 10 ms
I
DM
13.2 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) (Note 2) I
S
2.2 A
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
264
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
R
q
JA
80
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
Device Package Shipping
†
ORDERING INFORMATION
www.onsemi.com
20 V
24 mW @ 4.5 V
R
DS(on)
Max
3.6 A
I
D
MAXV
(BR)DSS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTR3C21NZT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
N−Channel MOSFET
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM &
PIN ASSIGNMENT
TRY = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
TRY MG
G
1
Gate
2
Source
Drain
3
26 mW @ 3.7 V
D
S
G
1
3
2
29 mW @ 3.3 V
33 mW @ 2.5 V
55 mW @ 1.8 V
NTR3C21NZT5G SOT−23
(Pb−Free)
10,000 / Tape &
Reel
NTR3C21NZ
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
20 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= 250 mA, ref to 25°C
21.6 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 20 V
T
J
= 25°C 1.0
mA
T
J
= 85°C 5.0
mA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±8 V ±10
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
0.45 1.0 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
2.7 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 4.5 V I
D
= 5 A 18 24 mW
V
GS
= 3.7 V I
D
= 4 A 18.5 26
V
GS
= 3.3 V I
D
= 3 A 19 29
V
GS
= 2.5 V I
D
= 2 A 20 33
V
GS
= 1.8 V I
D
= 1 A 25 55
Forward Transconductance g
FS
V
DS
= 5 V, I
D
= 3 A 20 S
CHARGES AND CAPACITANCES
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 16 V
1540
pF
Output Capacitance C
oss
105
Reverse Transfer Capacitance C
rss
86
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 16 V, I
D
= 5 A
17.8
nC
Threshold Gate Charge Q
G(TH)
2.1
Gate−to−Source Charge Q
GS
3.0
Gate−to−Drain Charge Q
GD
0.8
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time t
d(on)
V
GS
= 4.5 V, V
DS
= 16 V,
I
D
= 5 A, R
G
= 6.0 W
7.0
ns
Rise Time t
r
14
Turn−Off Delay Time t
d(off)
420
Fall Time t
f
4670
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 2.0 A
T
J
= 25°C 0.7 1.0
V
T
J
= 125°C 0.56
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTR3C21NZ
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
2.01.51.00.50
0
2
5
6
8
9
11
12
1.61.00.80.20
0
2
4
6
5
9
11
12
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
4.0 4.53.53.02.52.01.51.0
10
15
20
25
30
50
5.04.02.01.0
14
18
20
22
28
30
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.5
0.7
0.9
1.1
1.3
1.2
1.6
1.7
19151311975
1.E+01
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
I
DSS
, LEAKAGE (nA)
4
7
10
V
GS
= 1.2 V
7
8
10
V
DS
= 10 V
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
35
40
45
T
J
= 25°C
I
D
= 5 A
3.0
26
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
T
J
= 25°C
V
GS
= 1.8 V
V
GS
= 4.5 V
150 17
V
GS
= 4.5 V
I
D
= 5 A
T
J
= 85°C
T
J
= 125°C
16
24
V
GS
= 2.5 V
1
3
V
GS
= 1.5 V
V
GS
= 1.8 to 4.5 V
0.4 0.6 1.2 1.4
1
3
5.0 1.5 4.52.5 3.5
1.5
1.4
1.0
0.8
0.6
1.E+02
1.E+03
1.E+04
P1-P3P4-P6

NTR3C21NZT1G

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Manufacturer:
ON Semiconductor
Description:
MOSFET 20 V SANYO T6 NCH IN
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