VS-ETH3006SHM3, VS-ETH3006-1HM3
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Vishay Semiconductors
Revision: 10-Jul-15
1
Document Number: 94425
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 30 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• AEC-Q101 qualified, meets JESD 201 class 1A
whisker test
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC Boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-263AB (D
2
PAK), TO-262AA
I
F(AV)
30 A
V
R
600 V
V
F
at I
F
1.4 V
t
rr
(typ.) 27 ns
T
J
max. 175 °C
Diode variation Single die
TO-262AATO-263AB (D
2
PAK)
N/C
Anode
1
3
2
Anode
1
3
Base
cathode
2
N/C
VS-ETH3006SHM3 VS-ETH3006-1HM3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Repetitive peak reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 95 °C 30
A
Non-repetitive peak surge current I
FSM
T
C
= 25 °C 180
Operating junction and storage
temperatures
T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 30 A - 2.0 2.65
I
F
= 30 A, T
J
= 150 °C - 1.4 1.8
Reverse leakage current I
R
V
R
= V
R
rated - 0.02 30
μA
T
J
= 150 °C, V
R
= V
R
rated - 50 300
Junction capacitance C
T
V
R
= 600 V - 20 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
