SFP9640L Datasheet SFP9640L | P1-P3

SFP9640L

BV

DSS

= -200 V

R

DS(on)

= 0.5Ω

I

D

= -11 A

-200

-11

-7.5

-44

±20

806

-11

9.8

-5.0

98

0.78

- 55 to +150

300

1.27

--

62.5

--

0.5

--

Advanced Power MOSFET

Thermal Resistance

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

R

θJC

R

θCS

R

θJA

℃/W

Characteristic Max. UnitsSymbol Typ.

FEATURES

Absolute Maximum Ratings

Drain-to-Source Voltage

Continuous Drain Current (T

C

=25℃)

Continuous Drain Current (T

C

=100℃)

Drain Current-Pulsed

①

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

②

Avalanche Current

①

Repetitive Avalanche Energy

①

Peak Diode Recovery dv/dt

③

Total Power Dissipation (T

C

=25℃)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8＂ from case for 5-seconds

Characteristic Value UnitsSymbol

I

DM

V

GS

E

AS

I

AR

E

AR

dv/dt

I

D

P

D

T

J

, T

STG

T

L

A

V

mJ

A

mJ

V/ns

W

W/℃

A

℃

V

DSS

V

TO-220

1.Gate 2. Drain 3. Source

3

2

1

❑ Avalanche Rugged Technology

❑ Rugged Gate Oxide Technology

❑ Lower Input Capacitances

❑ Improved Gate Charge

❑ Extended Safe Operating Area

❑ Lower Leakage Current : -10uA (Max.) @ V

DS

= -200V

❑ Lower R

DS(ON)

: 0.383 Ω (Typ.)

Rev. A

SFP9640L

-200

--

-1.0

--

-0.16

--

207

81

16

23

54

19

46

9.2

22.9

--

-2.0

-100

100

-10

-100

0.5

--

1585

310

120

40

55

115

50

59

--

5.47

1220

--

205

1.45

-11

-44

-5.0

--

Notes ;

① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

② L=3mH, I

AS

=-11A, V

DD

=-50V, R

G

=27

Ω

, Starting T

J

=25℃

③ I

SD

≤-11A, di/dt≤100A/μs, V

DD

≤BV

DSS

, Starting T

J

=25℃

④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%

⑤ Essentially Independent of Operating Temperature

N-CHANNEL

POWER MOSFET

Electrical Characteristics

(T

C

=25

℃

unless otherwise specified)

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

CharacteristicSymbol

Max. UnitsTyp.Min. Test Condition

Static Drain-Source

On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain(＂Miller＂) Charge

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

BV

DSS

ΔBV/ΔT

J

V

GS(th)

R

DS(on)

I

GSS

I

DSS

V

V/℃

V

nA

μA

Ω

pF

ns

nC

--

V

GS

=0V,I

D

=-250μA

I

D

=-250μA See Fig 7

V

DS

=-5V,I

D

=-250μA

V

GS

=-20V

V

GS

=20V

V

DS

=-200V

V

DS

=-160V,T

C

=125℃

V

GS

=-5V,I

D

=-5.5A

④

V

DS

=-40V,I

D

=-5.5A

④

V

DD

=-100V,I

D

=-11A,

R

G

=4.6Ω

See Fig 13

④⑤

V

DS

=-160V,V

GS

=-5V,

I

D

=-11A

See Fig 6 & Fig 12

④⑤

Drain-to-Source Leakage Current

V

GS

=0V,V

DS

=-25V,f =1MHz

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current

Pulsed-Source Current ①

Diode Forward Voltage

④

Reverse Recovery Time

Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

Q

rr

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

--

A

V

ns

μC

Integral reverse pn-diode

in the MOSFET

T

J

=25℃,I

S

=-11A,V

GS

=0V

T

J

=25℃,I

F

=-11A

di

F

/dt=100A/μs

④

S

SFP9640L

10

-1

10

0

10

1

10

-1

10

0

10

1

@ Notes :

1. 250

µ

s Pulse Test

2. T

C

= 25

o

C

V

GS

Top : 1 5 V

1 0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

I

D

, Drain Current [A]

V

DS

, Drain-Source Voltage [V]

246810

10

-1

10

0

10

1

25

o

C

150

o

C

- 55

o

C

@ Notes :

1. V

GS

= 0 V

2. V

DS

= 30 V

3. 250

µ

s Pulse Test

-I

D

, Drain Current [A]

-V

GS

, Gate-Source Voltage [V]

0 5 10 15 20 25 30

0.0

0.2

0.4

0.6

0.8

1.0

@ Note : T

J

= 25

o

C

V

GS

=-10 V

V

GS

= -5 V

R

DS(on)

, [

Ω

]

Drain-Source On-Resistance

I

D

, Drain Current [A]

10

0

10

1

0

1000

2000

3000

4000

C

iss

= C

gs

+ C

gd

(

C

ds

= shorted

)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

@ Notes :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitance [pF]

-V

DS

, Drain-Source Voltage [V]

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

10

-1

10

0

10

1

150

o

C

25

o

C

@ Notes :

1. V

GS

= 0 V

2. 250

µ

s Pulse Test

-I

DR

, Reverse Drain Current [A]

-V

SD

, Source-Drain Voltage [V]

0 5 10 15 20 25

0.0

2.5

5.0

7.5

V

DS

= -160 V

V

DS

= -100 V

V

DS

= -40 V

@ Notes : I

D

= -6.5 A

-V

GS

, Gate-Source Voltage [V]

Q

G

, Total Gate Charge [nC]

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

SFP9640L

SFP9640L

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