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TIP147

P1-P3P4-P6P7-P9P10-P10
This is information on a product in full production.
April 2012 Doc ID 4132 Rev 8 1/10
10
TIP142, TIP147
Complementary power Darlington transistors
Datasheet — production data
Features
■ Monolithic Darlington configuration
■ Integrated antiparallel collector-emitter diode
Applications
■ Linear and switching industrial equipment
Description
The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration. The resulting
transistors show exceptional high gain
performance coupled with very low saturation
voltage.
Figure 1. Internal schematic diagrams
TO-247
1
2
3
R
1
typ. = 5 kΩ
R
2
typ. = 60 Ω
R
1
typ. = 8 kΩ
R
2
typ. = 100 Ω
Table 1. Device summary
Part number Marking Polarity Package Packaging
TIP142 TIP142 NPN
TO-247 Tube
TIP147 TIP147 PNP
www.st.com
Absolute maximum ratings TIP142, TIP147
2/10 Doc ID 4132 Rev 8
1 Absolute maximum ratings
Note: For PNP type voltage and current are negative.
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CBO
Collector-base voltage (I
E
= 0) 100 V
V
CEO
Collector-emitter voltage (I
B
= 0) 100 V
V
EBO
Emitter-base voltage (I
C
= 0) 5 V
I
C
Collector current 10 A
I
CM
Collector peak current 20 A
I
B
Base current 0.5 A
P
TOT
Total dissipation at T
case
= 25 °C 125 W
T
STG
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case __max 1 °C/W
TIP142, TIP147 Electrical characteristics
Doc ID 4132 Rev 8 3/10
2 Electrical characteristics
T
case
= 25 °C; unless otherwise specified.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off current
(I
E
= 0)
V
CB
= 100 V 1 mA
I
CEO
Collector cut-off current
(I
B
= 0)
V
CE
= 50 V 2 mA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 5 V 2 mA
V
CEO(sus)
(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
For PNP type voltage and current are negative.
Collector-emitter
sustaining voltage
(I
B
= 0)
I
C
= 30 mA 100 V
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= 5 A I
B
= 10 mA
I
C
= 10 A I
B
= 40 mA
2
3
V
V
V
BE(on)
(1)
Base-emitter on voltage I
C
= 10 A V
CE
= 4 V 3 V
h
FE
(1)
DC current gain
I
C
= 5 A V
CE
= 4 V
I
C
= 10 A V
CE
= 4 V
1000
500
t
on
t
off
Resistive load
Tur n - o n ti m e
Turn-off time
I
C
= 10 A R
L
= 3 Ω
I
B1
= -I
B2
= 40 mA
0.9
4
µs
µs
P1-P3P4-P6P7-P9P10-P10

TIP147

Mfr. #:
Buy TIP147
Manufacturer:
STMicroelectronics
Description:
Darlington Transistors PNP Power Darlington
Lifecycle:
New from this manufacturer.
Delivery:
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