NXP Semiconductors
PMZB390UNE
30 V, N-channel Trench MOSFET
PMZB390UNE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 12 March 2015 8 / 14
V
GS
(V)
0 431 2
aaa-015991
2
1
3
4
I
D
(A)
0
T
j
= 25 °C T
j
= 150 °C
V
DS
> I
D
× R
DSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
aaa-015992
1.0
0.5
1.5
2.0
a
0.0
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
-60 1801200 60
aaa-015993
0.5
1.0
1.5
V
GS(th)
(V)
0.0
min
typ
max
I
D
= 0.25 mA; V
DS
= V
GS
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
aaa-015994
V
DS
(V)
10
-1
10
2
101
10
10
2
C
(pF)
1
C
iss
C
oss
C
rss
f = 1 MHz; V
GS
= 0 V
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values