Document Number: 89061 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 20-Oct-09 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Photovoltaic Solarcell Protection Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
This datasheet reflects specifications of product in actual application.
SB15H45
Vishay General Semiconductor
New Product
FEATURES
• Guardring for overvoltage protection
• Low forward voltage drop, low power losses
• High efficiency operation
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: P600, molded epoxy over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
Notes
(1)
With heatsink, T
L
= 25 °C
(2)
Without heatsink, free air
(3)
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
PRIMARY CHARACTERISTICS
I
F(AV)
15 A
V
RRM
45 V
I
FSM
300 A
V
F
at I
F
= 15 A 0.46 V
T
OP
max. 175 °C
P600
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SB15H45 UNIT
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum average forward rectified current (fig. 1)
I
F(AV)
(1)
15
A
I
F(AV)
(2)
7
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
300 A
Operating junction and storage temperature range T
OP
, T
STG
- 55 to + 175 °C
Junction temperature in DC forward current
without reverse bias, t ≤ 1 h (fig. 1)
T
J
(3)
≤ 200 °C
