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IS61WV6416BLL-12BLI

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 1
Rev. B
07/22/09
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
IS64WV3216BLL
IS61WV3216BLL
FUNCTIONAL BLOCK DIAGRAM
32K x 16 HIGH-SPEED CMOS STATIC RAM
JULY 2009
FEATURES
• High-speedaccesstime:
12ns:3.3V+ 10%
15ns:2.5V-3.6V
• CMOSlowpoweroperation:
50 mW (typical) operating
25 µW (typical) standby
• TTLcompatibleinterfacelevels
• Fullystaticoperation:noclockorrefresh
required
• Threestateoutputs
• Datacontrolforupperandlowerbytes
• AutomotiveTemperatureAvailable
• Lead-freeavailable
DESCRIPTION
TheISSIIS61/64WV3216BLLisahigh-speed,524,288-bit
static RAM organized as 32,768 words by 16 bits. It
is fabricated using ISSI's high-performance CMOS
technology.Thishighlyreliableprocesscoupledwithin-
novative circuit design techniques, yields access times as
fast as 12ns (3.3V+ 10%)and15ns(2.5V-3.6V)withlow
power consumption.
When CE is HIGH (deselected), the device assumes
a standby mode at which the power dissipation can be
reduceddownwithCMOSinputlevels.
Easy memory expansion is provided by using Chip Enable
andOutputEnableinputs,CE and OE.TheactiveLOW
Write Enable (WE) controls both writing and reading of the
memory.AdatabyteallowsUpperByte(UB)andLower
Byte(LB) access.
The IS61/64WV3216BLL is packaged in the JEDEC
standard44-pinTSOP-II,and48-pinminiBGA(6mmx
8mm).
A0-A14
CE
OE
WE
32Kx16
MEMORYARRAY
DECODER
COLUMNI/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
LowerByte
I/O8-I/O15
UpperByte
UB
LB
2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
PIN CONFIGURATIONS
44-Pin TSOP-II
48-Pin mini BGA (6mm x 8mm)
PIN DESCRIPTIONS
A0-A14 AddressInputs
I/O0-I/O15 DataInputs/Outputs
CE Chip Enable Input
OE OutputEnableInput
WE Write Enable Input
LB Lower-byteControl(I/O0-I/O7)
UB Upper-byteControl(I/O8-I/O15)
NC NoConnection
Vd d Power
GND Ground
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB
OE
A0
A1
A2
NC
I/O
8
UB A3
A4
CE I/O
0
I/O
9
I/O
10
A5
A6
I/O
1
I/O
2
GND
I/O
11
NC
A7
I/O
3
V
DD
V
DD
I/O
12
NC
NC
I/O
4
GND
I/O
14
I/O
13
A14
NC
I/O
5
I/O
6
I/O
15
NC
A12
A13
WE
I/O
7
NC
A8
A9
A10
A11 NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
V
DD
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
V
DD
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-47743
Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
OPERATING RANGE (Vd d )
Range Ambient Temperature Vd d (15 ns) Vd d (12 ns)
Commercial 0°Cto+70°C 2.5V-3.6V 3.3V+ 10%
Industrial –40°Cto+85°C 2.5V-3.6V 3.3V+ 10%
Automotive –40°Cto+125°C 2.5V-3.6V 3.3V+ 10%
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
Vt e r m TerminalVoltagewithRespecttoGND –0.5toVd d +0.5 V
ts t g StorageTemperature –65to+150 °C
Pt PowerDissipation 1.5 W
Vd d Vd d RelatedtoGND -0.2to+3.9 V
Note:
1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamagetothe
device.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditionsabove
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
TRUTH TABLE
I/O PIN
Mode WE CE OE LB UB I/O0-I/O7 I/O8-I/O15 Vd d Current
NotSelected X H X X X High-Z High-Z Is b 1, Is b 2
OutputDisabled H L H X X High-Z High-Z Ic c
X L X H H High-Z High-Z
Read H L L L H do u t High-Z Ic c
H L L H L High-Z do u t
H L L L L do u t do u t
Write L L X L H dI n High-Z Ic c
L L X H L High-Z dI n
L L X L L dI n dI n
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

IS61WV6416BLL-12BLI

Mfr. #:
Buy IS61WV6416BLL-12BLI
Manufacturer:
ISSI
Description:
SRAM 1Mb 64Kx16 12ns/3.3v Async SRAM 3.3v
Lifecycle:
New from this manufacturer.
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