ALM-11336-TR1G Datasheet ALM-11336-TR1G, ALM-11336-BLKG | P1-P3

ALM-11336

1850 MHz – 1980 MHz

Low Noise, High Linearity Amplier Module

with Fail-Safe Bypass Feature

Data Sheet

Description

Avago Technologies’ ALM-11336 is an easy-to-use GaAs

MMIC Tower Mount Amplier (TMA) LNA Module with low

IL bypass path. The module has low noise and high linearity

achieved through the use of Avago Technologies’ propri-

etary 0.25 mm GaAs Enhancement-mode pHEMT process.

All matching components are fully integrated within the

module and the 50 ohm RF input and output pins are

already internally AC-coupled. This makes the ALM-11336

extremely easy to use as the only external parts are DC

supply bypass capacitors. For optimum performance

at other bands, ALM-11036 (776-870 MHz), ALM-11136

(870-915 MHz) and ALM-11236 (1710-1850) are recom-

mended. All ALM-11x36 share the same package and pin

out conguration.

Pin Conguration and Package Marking

7.0 x 10.0 x 1.5 mm

36-lead MCOB

Features

• Very Low Noise Figure

• Low Bypass IL

• Good Return Loss

• Fail-safe Bypass mode

• High linearity performance

• High isolation @LNA mode

• Flat gain

• GaAs E-pHEMT Technology

• Single 5 V power supply

• Compact MCOB package 7.0 x 10.0 x 1.5 mm

• MSL2a

Specications

1980 MHz; 5 V, 100 mA (Typical)

• 15.3 dB Gain

• ≥ 18 dB RL

• 0.72 dB Noise Figure

• 17.9 dBm IIP3

• 3.8 dBm Input Power at 1dB gain compression

• 0.78 dB Bypass IL

• ≥ 18 dB Bypass RL

• ≥ 50 dB isolation @LNA mode

Applications

• Tower Mount Amplier (TMA)

• Cellular Infrastructure

Note:

Package marking provides orientation and identication

“11336” = Device Part Number

“WWYY” = Work week and Year of manufacture

“XXXX” = Last 4 digit of Lot number

Attention: Observe precautions for

handling electrostatic sensitive devices.

ESD Machine Model = 300 V

ESD Human Body Model = 2000 V

Refer to Avago Application Note A004R:

Electrostatic Discharge, Damage and Control.

Pin Connection

4 RF_IN

23 RF_OUT

28 EXT_P2

30 EXT_P1

33 Vdd

Others GND

AVAGO

11336

WWYY

XXXX

Absolute Maximum Rating

[1]

= 25° C

Symbol Parameter Units Absolute Max.

Device Voltage,

RF output to ground

V 5.5

in,max

CW RF Input Power

= 5.0 V, I

= 100 mA)

dBm +15

diss

Total Power Dissipation

[3]

W 0.715

Junction Temperature °C 150

STG

Storage Temperature °C -65 to 150

Thermal Resistance

[2]

= 5.0 V, I

= 100 mA) θ

= 56.2 °C/W

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. Thermal resistance measured using Infra-Red

Measurement Technique.

3. Power dissipation with unit turned on. Board

temperature T

is 25° C. Derate at 17.8 mW/°C

for T

> 109.8° C.

Electrical Specications

[1, 4]

RF performance at T

= 25° C, V

= 5 V, 1980 MHz, measured on demo board in Figure 1 with component listed in Table1

for DC bypass.

Symbol Parameter and Test Condition Frequency (MHz) Units Min. Typ. Max.

Drain Current mA 81 100 117

Gain Gain 1850

1910

1980

dB –

–

13.8

15.6

15.4

15.3

–

16.8

IRL

Input Return Loss, 50 Ω source

dB – 23 –

ORL

Output Return Loss, 50 Ω load

dB – 28 –

[2]

Noise Figure 1850

1910

1980

dB –

–

0.72

–

0.9

IIP3

[3]

Input Third Order Intercept Point dBm 14 17.9 –

IP1dB Input Power at 1 dB Gain Compression dBm 2.85 3.8 –

Bypass IL

Bypass Insertion Loss, 50 Ω load Vdd = 0 V

1980 dB – 0.78 1.1

Bypass IRL

Input Return Loss, 50 Ω source Vdd = 0 V

dB – 23 –

Bypass ORL

Output Return Loss, 50 Ω load Vdd = 0 V

dB – 23 –

ISOL Bypass Isolation @LNA ON Vdd = 5 V dB – 65 –

Notes:

1. Measurements at 1980 MHz obtained using demo board described in Figure 1.

2. For NF data, board losses of the input have not been de-embedded.

3. IIP3 test condition: F

RF1

= 1980 MHz, F

RF2

= 1981 MHz with input power of -15 dBm per tone.

4. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application

note for more details.

80 85 90 95 100 105 110 115

LSL USL LSL

USL

14 15 1716

LSL

14 15

17 18 19 21 2220

0.70.6 0.8 0.9

USL

LSL

-1.1 -1 -0.9 -0.8 -0.7 -0.6

LSL

Product Consistency Distribution Charts

[1, 2]

Figure 1. Idd, LSL = 81 mA , nominal = 100 mA, USL = 117 mA Figure 2. Gain, LSL = 13.8 dB, nominal = 15.3 dB, USL = 16.8 dB

Figure 3. NF, nominal = 0.72 dB, USL = 0.9 dB Figure 4. IIP3, LSL = 14 dBm, nominal = 17.9 dBm

Figure 5. IP1dB, LSL = 2.85 dBm, nominal = 3.8 dBm

Notes:

1. Distribution data sample size is 1500 samples taken from 3 dierent wafer lots. Future wafers allocated to this product may have nominal values

anywhere between the upper and lower limits.

2. Circuit trace losses have not been de-embedded from measurements above.

Figure 6. Bypass IL, LSL = 1.1 dB, nominal = 0.78 dB

P1-P3 P4-P6 P7-P9 P10-P12

ALM-11336-TR1G

Mfr. #:

Buy ALM-11336-TR1G

Manufacturer:

Broadcom / Avago

Description:

RF Amplifier TMA Bypass LNA Module

Lifecycle:

New from this manufacturer.

Delivery:

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ALM-11336-TR1G

ALM-11336-TR1G

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