6.42
IDT70P264/254/244L Datasheet
Low Power 1.8V 16K/8K/4K x 16 Dual-Port Static RAM Industrial Temperature Range
4
Absolute Maximum Ratings
(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
2. V
TERM must not exceed VDD + 0.3V for more than 25% of the cycle time or 10ns maximum, and
is limited to
< 20mA for the period over VTERM = VDD + 0.3V.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
4. V
DDQL + 0.3V for left port.
Symbol Rating Industrial Unit
V
TERM Supply Voltage on V
DD
with Respect to GND
-0.5 to +2.9 V
V
TERM Supply Voltage on V
DDQL
with Respect to GND
-0.5 to +3.6 V
V
TERM
(2)
Terminal Voltage with
Respect to GND
-0.5 to V
DD
+0.3
(4)
V
T
BIAS
(3)
Temperature Under Bias -55 to +125
o
C
T
STG Storage Temperature -65 to +150
o
C
T
JN Junction Temperature
+150
o
C
I
OUT (for
V
DDQL = 3.0V)
DC Output Current 20 mA
I
OUT (for
V
DDQL = 2.5V)
DC Output Current 20 mA
7148 tbl 03
Capacitance
(TA = +25°C, f = 1.0MHz)
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
Symbol Parameter Conditions
(2)
Max. Unit
C
IN
Input Capacitance V
IN
= 3dV 9 pF
C
OUT
Output Capacitance V
OUT
= 3dV 10 pF
7148
tbl 07
Maximum Operating Temperature
and Supply Voltage
(1)
NOTE:
1. This is the parameter T
A. This is the "instant on" case temperature.
Grade Ambient
Temperature
GND V
DD
Industrial -40
O
C to +85
O
C0V1.8V
+
100mV
7148 tbl 04
6.42
Low Power 1.8V 16K/8K/4K x 16 Dual-Port Static RAM Industrial Temperature Range
5
IDT70P264/254/244L Datasheet
Recommended DC Operating Conditions (VDDQL = 3.0V±300mV)
NOTES:
1. V
IL > -1.5V for pulse width less than 10ns.
2. V
TERM must not exceed VDD + 0.3V.
Symbol Parameter Min. Typ. Max. Unit
V
DD
Supply Voltage 1.7 1.8 1.9 V
V
DDQL
Left Port Supply Voltage 2.7 3.0 3.3 V
V
SS
Ground 0 0 0 V
V
IHL
Input High Voltage (V
DDQL
= 3.0V) 2.0
___
V
DDQL
+ 0.2 V
V
ILL
Input Low Voltage (V
DDQL
= 3.0V) -0.2
___
0.7 V
V
IHR
Input High Voltage 1.2
___
V
DD
+ 0.2 V
V
ILR
Input Low Voltage
-0.2
___
0.4 V
7148 tbl 05
Symbol Parameter Min. Typ. Max. Unit
V
DD
Supply Voltage 1.7 1.8 1.9 V
V
DDQL
Left Port Supply Voltage 2.4 2.5 2.6 V
V
SS
Ground 0 0 0 V
V
IHL
Input High Voltage (V
DDQL
= 2.5V) 1.7
___
V
DDQL
+ 0.3 V
V
ILL
Input Low Voltage (V
DDQL
= 2.5V) -0.3
___
0.6 V
V
IHR
Input High Voltage 1.2
___
V
DD
+ 0.2 V
V
ILR
Input Low Voltage -0.2
___
0.4 V
7148 tbl 06
Recommended DC Operating Conditions (VDDQL = 2.5V±100mV)
Recommended DC Operating Conditions (VDDQL = 1.8V±100mV)
Symbol Parameter Min. Typ. Max. Unit
V
DD
Supply Voltage 1.7 1.8 1.9 V
V
DDQL
Left Port Supply Voltage 1.7 1.8 1.9 V
V
SS
Ground 0 0 0 V
V
IHL
Input High Voltage (V
DDQL
= 1.8V) 1.2
___
V
DDQL
+ 0.2 V
V
ILL
Input Low Voltage (V
DDQL
= 1.8V) -0.2
___
0.4 V
V
IHR
Input High Voltage 1.2
___
V
DD
+ 0.2 V
V
ILR
Input Low Voltage -0.2
___
0.4 V
7148 tbl 06_5
6.42
IDT70P264/254/244L Datasheet
Low Power 1.8V 16K/8K/4K x 16 Dual-Port Static RAM Industrial Temperature Range
6
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(VDD = 1.8V ± 100mV)
Symbol Parameter
Test Conditions
Min. Max. Unit
I
LI
Input Leakage Current
V
DD
= 1.8V, V
IN
= 0V
to
V
DD
-1 1
µA
I
LO
Output Leakage Current
CE = V
IH
, V
OUT
= 0V
to
V
DD
-1 1
µA
V
OLL
Output Low Voltage (V
DDQL
= 3.0V)
I
OLL
= +2mA
___
0.4 V
V
OHL
Output High Voltage (V
DDQL
= 3.0V)
I
OHL
= -2mA
2.1
___
V
V
OLL
Output Low Voltage (V
DDQL
= 2.5V)
I
OLL
= +2mA
___
0.4 V
V
OHL
Output High Voltage (V
DDQL
= 2.5V)
I
OHL
= -2mA
2.0
___
V
V
OLL
Output Low Voltage (V
DDQL
= 1.8V)
I
OLL
= +0.1mA
___
0.2 V
V
OHL
Output High Voltage (V
DDQL
= 1.8V)
I
OHL
= -0.1mA
V
DDQL
- 0.2V
___
V
V
OLR
Output Low Voltage
I
OLR
= +0.1mA
___
0.2 V
V
OHR
Output High Voltage
I
OHR
= -0.1mA
V
DD
- 0.2V
___
V
V
OLINT
(1,2)
Output Low Voltage Interrupt
I
OL
= +2mA
___
0.4 V
7148 tbl 08
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(VDD = 1.8V ±100mV)
NOTES:
1. V
DD = 1.8V, TA = +25°C, and are not production tested. IDD = 15mA (typ.)
2. At f = f
MAX, address and control lines are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions”.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
70P264/254/244
Ind'l Only
Symbol Parameter Test Condition Version
40ns 55ns
Typ.
(1)
Max. Typ.
(1)
Max. Unit
I
DD
Dynamic Operating Current
(Both Ports Active)
CE
R
and CE
L
= V
IL
, Outputs Open
f = f
MAX
(2)
IND'L L 25 40 15 25
mA
I
SB1
Standby Current (Both Ports
Inactive)
CE
R
= V
DD
- 0.2V and CE
L
=
V
DDQL
- 0.2V
,
f = f
MAX
(2)
IND'L L
2
6
2
6
µA
I
SB2
Standby Current (One Port
Inactive, One Port Active)
CE"
A
" = V
IL
and CE"
B
" = V
IH
(3)
, Active Port Outputs Open
f = f
MAX
(2)
IND'L L
8.5 18 8.5 14 mA
I
SB3
Full Standby Current (Both
Ports Inactive - CMOS Level
Inputs)
CE
L
> V
DDQL
- 0.2V and CE
R
> V
DD
- 0.2V,
f = 0
IND'L L
2
626
µA
I
SB4
Standby Current (One Port
Inactive, One Port Active -
CMOS Level Inputs)
CE
"A"
< 0.2V and CE
"B"
> V
DDQ
- 0.2V
(3)
,
Active Port Outputs Open
f = f
MAX
(2)
IND'L L
8.5 18 8.5 14 mA
7148 tbl 09
NOTES:
1. Interrupt can be level shifted to a higher voltage by tieing a resistor (R3) to an external power supply (VDDINT
X). The value of R3 is a trade off between
t
INX and power.
2. VDDINT
R > VDD, VDDINTL > VDDQL

70P264L40BYGI

Mfr. #:
Manufacturer:
IDT
Description:
SRAM Low Power Dual-Port RAM IC
Lifecycle:
New from this manufacturer.
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