ZVN2535ASTZ

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 350 Volt V
DS
R
DS(on)
=35
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
350 V
Continuous Drain Current at T
amb
=25°C I
D
90 mA
Pulsed Drain Current I
DM
1A
Gate Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
350 V I
D
=1mA, V
GS
=0V
Gate-Source
Threshold Voltage
V
GS(th)
1 3 V ID=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
10
400
µA
µA
V
DS
=350V, V
GS
=0
V
DS
=280V, V
GS
=0V,
T=125°C
(2)
On-State Drain Current(1) I
D(on)
250 mA V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
35
V
GS
=10V,I
D
=100mA
Forward Transconductance (1)(
2)
g
fs
100 mS V
DS
=25V,I
D
=100mA
Input Capacitance (2) C
iss
70 pF
Common Source Output
Capacitance (2)
C
oss
10 pF V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
4pF
Turn-On Delay Time (2)(3) t
d(on)
7ns
V
DD
25V, I
D
=100mA
Rise Time (2)(3) t
r
7ns
Turn-Off Delay Time (2)(3) t
d(off)
16 ns
Fall Time (2)(3) t
f
10 ns
(
1
)
Measured under
p
ulsed conditions. Width=300
µ
s. Dut
y
c
y
cle 2%
E-Line
TO92 Compatible
ZVN2535A
3-372
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
I
D(
O
n
)
Dr
a
i
n
C
u
rren
t (
mA
)
Transfer Characteristics
Saturation Characteristics
V
DS-
Drain Source
Voltage (Volts)
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
ID=
250mA
100mA
I
D(
O
n
)
Dr
a
i
n
C
u
rren
t
(m
A)
V
GS-
Gate Source
Voltage (Volts)
I
D(
O
n
)
Drain Current (mA)
VDS - Drain Source Voltage (Volts)
50mA
14
12
10
6
2
0
4
8
16
18
12345678910
20
01 2 3 4 5 6 7 8 9 10
VDS=
10V
0102030405060708090100
10V
6V
4V
3V
VGS=
800
600
200
0
400
700
500
300
100
10V
4V
3V
VGS=
350
300
250
150
50
0
100
200
400
450
0 5 10 15 20 25
500
200
0
400
300
100
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-
Ca
pa
c
ita
nce
(
pF)
Coss
Ciss
Crss
0
10 20
30
40 50
75
50
25
100
125
Transconductance v drain current
ID- Drain Current (mA)
g
f
s
-T
ransconductance (mS)
0100200300400500
0
50
100
200
150
250
ZVN2535A
3-373
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 350 Volt V
DS
R
DS(on)
=35
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
350 V
Continuous Drain Current at T
amb
=25°C I
D
90 mA
Pulsed Drain Current I
DM
1A
Gate Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
350 V I
D
=1mA, V
GS
=0V
Gate-Source
Threshold Voltage
V
GS(th)
1 3 V ID=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
10
400
µA
µA
V
DS
=350V, V
GS
=0
V
DS
=280V, V
GS
=0V,
T=125°C
(2)
On-State Drain Current(1) I
D(on)
250 mA V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
35
V
GS
=10V,I
D
=100mA
Forward Transconductance (1)(
2)
g
fs
100 mS V
DS
=25V,I
D
=100mA
Input Capacitance (2) C
iss
70 pF
Common Source Output
Capacitance (2)
C
oss
10 pF V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
4pF
Turn-On Delay Time (2)(3) t
d(on)
7ns
V
DD
25V, I
D
=100mA
Rise Time (2)(3) t
r
7ns
Turn-Off Delay Time (2)(3) t
d(off)
16 ns
Fall Time (2)(3) t
f
10 ns
(
1
)
Measured under
p
ulsed conditions. Width=300
µ
s. Dut
y
c
y
cle 2%
E-Line
TO92 Compatible
ZVN2535A
3-372
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
I
D(
O
n
)
Dr
a
i
n
C
u
rren
t (
mA
)
Transfer Characteristics
Saturation Characteristics
V
DS-
Drain Source
Voltage (Volts)
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
ID=
250mA
100mA
I
D(
O
n
)
Dr
a
i
n
C
u
rren
t
(m
A)
V
GS-
Gate Source
Voltage (Volts)
I
D(
O
n
)
Drain Current (mA)
VDS - Drain Source Voltage (Volts)
50mA
14
12
10
6
2
0
4
8
16
18
12345678910
20
01 2 3 4 5 6 7 8 9 10
VDS=
10V
0102030405060708090100
10V
6V
4V
3V
VGS=
800
600
200
0
400
700
500
300
100
10V
4V
3V
VGS=
350
300
250
150
50
0
100
200
400
450
0 5 10 15 20 25
500
200
0
400
300
100
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-
Ca
pa
c
ita
nce
(
pF)
Coss
Ciss
Crss
0
10 20
30
40 50
75
50
25
100
125
Transconductance v drain current
ID- Drain Current (mA)
g
f
s
-T
ransconductance (mS)
0100200300400500
0
50
100
200
150
250
ZVN2535A
3-373
TYPICAL CHARACTERISTICS
250
150
50
100
200
0246810
On-resistance v drain current
I
D-
Drain Current
(mA)
RDS(on)-Drain Source On Resistance
()
10
100 1000
4V VGS=3V 10V
30
10
100
20
40
50
60
70
80
90
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Normalised R
D
S
(
o
n
)
a
nd
V
G
S
(th
)
-40
-20 0 20 40 60 80
120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-S
ourc
e
R
es
i
s
tanc
e
R
D
S(
o
n
)
Ga
t
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
V
G
S(
th
)
T-Temperature (C°)
0.4
-80
-60
Q-Charge (nC)
Transconductance v gate-source voltage
VGS-Gate Source Voltage (Volts)
V
GS
-
Gate
So
ur
ce V
o
l
t
age
(V
olts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
VDS=
100V
ID= 300mA
200V
350V
0.5 1.0 1.5 2.0 2.5 3.0
g
fs
-
F
o
r
ward T
ranscondu
ctance
(
mS
)
ID=100mA
VGS=10V
ID=1mA
VGS=VDS
ZVN2535A
3-374

ZVN2535ASTZ

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-Chnl 350V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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