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NJVMJD50T4G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 15
1 Publication Order Number:
MJD47/D
MJD47, NJVMJD47T4G,
MJD50, NJVMJD50T4G
High Voltage Power
Transistors
DPAK for Surface Mount Applications
Designed for line operated audio output amplifier, switchmode supply
drivers and other switching applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Electrically Similar to Popular TIP47, and TIP50
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage
MJD47, NJVMJD47T4G
MJD50, NJVMJD50T4G
V
CEO
250
400
Vdc
Collector−Base Voltage
MJD47, NJVMJD47T4G
MJD50, NJVMJD50T4G
V
CB
350
500
Vdc
Emitter−Base Voltage V
EB
5 Vdc
Collector Current − Continuous I
C
1 Adc
Collector Current − Peak I
CM
2 Adc
Base Current I
B
0.6 Adc
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
15
0.12
W
W/°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
P
D
1.56
0.0125
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +150 °C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
NPN SILICON POWER
TRANSISTORS
1 AMPERE
250, 400 VOLTS, 15 WATTS
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
Jxx = Device Code
xx = 47 or 50
G = Pb−Free Package
AYWW
JxxG
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
3
2
1
4
1
BASE
3
EMITTER
COLLECTOR
2, 4
MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance Junction−to−Case
R
q
JC
8.33 °C/W
Thermal Resistance Junction−to−Ambient (Note 2)
R
q
JA
80 °C/W
Lead Temperature for Soldering Purpose T
L
260 °C
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 30 mAdc, I
B
= 0)
MJD47, NJVMJD47T4G
MJD50, NJVMJD50T4G
V
CEO(sus)
250
400
−
−
Vdc
Collector Cutoff Current
(V
CE
= 150 Vdc, I
B
= 0)
MJD47, NJVMJD47T4G
(V
CE
= 300 Vdc, I
B
= 0)
MJD50, NJVMJD50T4G
I
CEO
−
−
0.2
0.2
mAdc
Collector Cutoff Current
(V
CE
= 350 Vdc, V
BE
= 0)
MJD47, NJVMJD47T4G
(V
CE
= 500 Vdc, V
BE
= 0)
MJD50, NJVMJD50T4G
I
CES
−
−
0.1
0.1
mAdc
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
I
EBO
− 1
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= 0.3 Adc, V
CE
= 10 Vdc)
(I
C
= 1 Adc, V
CE
= 10 Vdc)
h
FE
30
10
150
−
−
Collector−Emitter Saturation Voltage
(I
C
= 1 Adc, I
B
= 0.2 Adc)
V
CE(sat)
− 1
Vdc
Base−Emitter On Voltage
(I
C
= 1 Adc, V
CE
= 10 Vdc)
V
BE(on)
− 1.5
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(I
C
= 0.2 Adc, V
CE
= 10 Vdc, f = 2 MHz)
f
T
10 −
MHz
Small−Signal Current Gain
(I
C
= 0.2 Adc, V
CE
= 10 Vdc, f = 1 kHz)
h
fe
25 −
−
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G
http://onsemi.com
3
25
25
Figure 1. Power Derating
T, TEMPERATURE (°C)
0
50 75 100 125 150
20
15
10
5
P
D
, POWER DISSIPATION (WATTS)
Figure 2. Switching Time Equivalent Circuit
APPROX
+11 V
R
B
-4 V
t
1
SCOPE
V
CC
R
C
51
R
B
and R
C
VARIED TO OBTAIN
DESIRED CURRENT LEVELS.
2.5
0
2
1.5
1
0.5
T
A
T
C
T
C
DUTY CYCLE ≈ 2%
APPROX -9 V
t
1
≤ 7 ns
10 < t
2
< 500 ms
t
3
< 15 ns
V
in
0
C
jd
<< C
eb
V
in
t
2
t
3
APPROX
+11 V
V
in
TURN-ON PULSE
T
A
(SURFACE MOUNT)
V
EB(off)
TURN-OFF PULSE
TYPICAL CHARACTERISTICS
0.02
I
C
, COLLECTOR CURRENT (AMPS)
1
0.8
V, VOLTAGE (VOLTS)
1.4
1.2
0.4
0
0.6
0.2
V
BE(sat)
@ I
C
/I
B
= 5
V
BE(on)
@ V
CE
= 4 V
V
CE(sat)
@ I
C
/I
B
= 5
0.02
I
C
, COLLECTOR CURRENT (AMPS)
2
0.06 0.2 2
40
10
100
h
FE
, DC CURRENT GAIN
V
CE
= 10 V
T
J
= 150°C
60
0.1 0.6
25°C
-55°C
20
0.04
0.4 1
200
4
6
Figure 3. DC Current Gain
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
r(t), TRANSIENT THERMAL
R
q
JC(t)
= r(t) R
q
JC
R
q
JC
= 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
RESISTANCE (NORMALIZED)
Figure 4. “On” Voltages
0.7
Figure 5. Thermal Response
0.5
0.1
0.05
0.03
0.02
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500
0.06 0.2 20.1 0.6
0.04
0.4 1
0.2
SINGLE PULSE
D = 0.5
0.05
T
J
= 25°C
0.1
0.02
0.01
P1-P3P4-P6

NJVMJD50T4G

Mfr. #:
Buy NJVMJD50T4G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT BIP NPN 1A 400V TR
Lifecycle:
New from this manufacturer.
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