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AT-31011-BLKG

P1-P3P4-P6P7-P9P10-P10
AT-31011, AT-31033
Low Current, High Performance NPN
Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-31011 and AT-31033 are high performance
NPN bipolar transistors that have been optimized for op-
eration at low voltages, making them ideal for use in bat-
tery powered applications in wireless markets. The AT-
31033 uses the 3 lead SOT-23, while the AT-31011 places
the same die in the higher performance 4 lead SOT-143.
Both packages are industry standards compatible with
high volume surface mount assembly techniques.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of these transistors yields extremely high
performance products that can perform a multiplicity
of tasks. The 10 emitter nger interdigitated geometry
yields an extremely fast transistor with low operating
currents and reasonable impedances.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.9 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buer, oscilla-
tor, or active mixer. Applications include cellular and PCS
handsets as well as Industrial-Scientic-Medical systems.
Typical amplier designs at 900 MHz yield 1.3 dB noise
gures with 11 dB or more associated gain at a 2.7 V, 1
mA bias. Moderate output power capability (+9 dBm
P
1dB
) coupled with an excellent noise gure yields high
dynamic range for a microcurrent device. High gain ca-
pability at 1 V, 1 mA makes these devices a good t for 900
MHz pager applications.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz f
T
, 30 GHz f
max
Self-Aligned-Transistor (SAT) process. The die are nitride
passivated for surface protection. Excellent device uni-
formity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and
gold metalization in the fabrication of these devices.
Features
• High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation
• 900 MHz Performance:
AT-31011: 0.9 dB NF, 13 dB G
A
AT-31033: 0.9 dB NF, 11 dB G
A
• Characterized for End-Of-Life Battery Use (2.7 V)
• SOT-143 SMT Plastic Package
• Tape-And-Reel Packaging Option Available
• Lead-free
Pin Connections and Package Marking
Notes:
Top View. Package Marking provides orientation and identication.
"x" is the date code.
BASE EMITTER
EMITTER COLLECTOR
BASE EMITTER
COLLECTOR
310x
310x
SOT-23 (AT-31033)
SOT-143 (AT-31011)
2
AT-31011, AT-31033 Absolute Maximum Ratings
Symbol Parameter Units Absolute Maximum
[1]
V
EBO
Emitter-Base Voltage V 1.5
V
CBO
Collector-Base Voltage V 11
V
CEO
Collector-Emitter Voltage V 5.5
I
C
Collector Current mA 16
P
T
Power Dissipation
[2,3]
mW 150
T
j
Junction Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. T
Mounting Surface
= 25°C.
3. Derate at 1.82 mW/°C for T
C
> 67.5°C.
Electrical Specications, T
A
= 25°C
AT-31011 AT-31033
Symbol Parameters and Test Conditions Units Min Typ Max Min Typ Max
NF Noise Figure
V
CE
= 2.7 V, I
C
= 1 mA f = 0.9 GHz dB 0.9
[1]
1.2
[1]
0.9
[2]
1.2
[2]
G
A
Associated Gain
V
CE
= 2.7 V, I
C
= 1 mA f = 0.9 GHz dB 11
[1]
13
[1]
9
[2]
11
[2]
h
FE
Forward Current V
CE
= 2.7 V - 70 300 70 300
Transfer Ratio I
C
= 1 mA
I
CBO
Collector Cuto Current V
CB
= 3 V µA 0.05 0.2 0.05 0.2
I
EBO
Emitter Cuto Current V
EB
= 1 V µA 0.1 1.5 0.1 1.5
Notes:
1. Test circuit B, Figure 1. Numbers reect device performance de-embedded from circuit losses. Input loss = 0.4 dB; output loss = 0.4 dB.
2. Test circuit A, Figure 1. Numbers reect device performance de-embedded from circuit losses. Input loss = 0.4 dB; output loss = 0.4 dB.
Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a Compromise Match Between Best Noise Fig-
ure, Best Gain, Stability, a Practical, Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and AT-310
Geometries.
AT-31011 fig 1
1000 pF
V
BB
W = 10 L = 1860
W = 10 L = 1000
W = 30 L = 100
W = 30 L = 100
W = 10 L = 1860
1000 pF
V
CC
25 Ω
W = 10 L = 1025
TEST CIRCUIT A: W = 20 L = 100
TEST CIRCUIT B: W = 20 L = 200 x 2
NOT TO SCALE
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
DIMENSIONS IN MILS
Thermal Resistance
[2]
:
θ
jc
= 550°C/W
3
AT-31011 fig 5
P 1dB (dBm)
0
0
FREQUENCY (GHz)
1.0 1.5
10
4
2
0.5 2.5
6
2.0
8
10 mA
5 mA
2 mA
2 mA
5 mA
10 mA
AT-31011 fig 4
Ga (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
25
10
5
0.5 2.5
15
2.0
20
10 mA
1 mA
AT-31011 fig 3
Ga (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
25
10
5
0.5 2.5
15
2.0
20
1 mA
10 mA
Characterization Information, T
A
= 25°C
AT-31011 AT-31033
Symbol Parameters and Test Conditions Units Typ Typ
P
1dB
Power at 1 dB Gain Compression (opt tuning)
V
CE
= 2.7 V, I
C
= 10 mA f = 0.9 GHz dBm 9 9
G
1dB
Gain at 1 dB Gain Compression (opt tuning)
V
CE
= 2.7 V, I
C
= 10 mA f = 0.9 GHz dB 15 13
IP
3
Output Third Order Intercept Point,
V
CE
= 2.7 V, I
C
= 10 mA (opt tuning) f = 0.9 GHz dBm 20 20
|S
21
|
E
2
Gain in 50 Ω System; V
CE
= 2.7 V, I
C
= 1 mA f = 0.9 GHz dB 10 9
C
CB
Collector-Base Capacitance V
CB
= 3V, f = 1 MHz pF 0.04 0.04
Note:
1. Amplier NF represents the noise gure which can be expected in a real circuit representing reasonable reection coecients and including
circuit losses.
Figure 7. AT-31033 1 dB Compressed Gain vs. Frequen-
cy and Current at V
CE
= 2.7 V.
Figure 6. AT-31011 1 dB Compressed Gain vs. Frequen-
cy and Current at V
CE
= 2.7 V.
Figure 5. AT-31011 and AT-31033 Power at 1 dB Gain
Compression vs. Frequency and Current at V
CE
= 2.7 V.
Figure 4. AT-31033 Associated Gain at Optimum Noise
Match vs. Frequency and Current at V
CE
= 2.7 V.
Figure 3. AT-31011 Associated Gain at Optimum Noise
Match vs. Frequency and Current at V
CE
= 2.7 V.
Figure 2. AT-31011 and AT-31033 Minimum Noise
Figure and Amplier NF
[1]
vs. Frequency and Current
at V
CE
= 2.7 V.
AT-31011 fig 2
NOISE FIGURE (dB)
0
0
FREQUENCY (GHz)
1 1.5
2.5
1
0.5
0.5 2.5
1.5
2
2
1 mA
10 mA
AMPLIFIER NF
NF MIN.
AT-31011 fig 6
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
20
8
4
0.5 2.5
12
2.0
16
2 mA
5 mA
10 mA
AT-31011 fig 7
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
16
4
0.5 2.5
8
2.0
12
2 mA
5 mA
10 mA
P1-P3P4-P6P7-P9P10-P10

AT-31011-BLKG

Mfr. #:
Buy AT-31011-BLKG
Manufacturer:
Broadcom / Avago
Description:
RF Bipolar Transistors Transistor Si Low Current
Lifecycle:
New from this manufacturer.
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