DGSK8-025A

© 2004 IXYS All rights reserved
1 - 2
DGS 4-025A DGS 3-025AS
DGSK 8-025A
435
IXYS reserves the right to change limits, test conditions and dimensions
Type Marking on product Circuit Package
DGS 3-025AS 3A250AS
DGS 4-025A DGS 4-025A
DGSK 8-025A DGSK 8-025A
Single
Common cathode
Features
Low forward voltage
Very high switching speed
• Low junction capacity of GaAs
- low reverse current peak at turn off
• Soft turn off
Temperature independent switching
behaviour
• High temperature operation capability
• Epoxy meets UL 94V-0
Applications
• MHz switched mode power supplies
(SMPs)
• Small size SMPs
High frequency converters
Resonant converters
Gallium Arsenide Schottky Rectifier
I
FAV
= 5.4 A
V
RRM
= 250 V
C
Junction
= 6.4 pF
AC
ACA
Symbol Conditions Maximum Ratings
V
RRM/RSM
250 V
I
FAV
T
C
= 25°C; DC 5.4 A
I
FAV
T
C
= 90°C; DC 3.9 A
I
FSM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine 10 A
T
VJ
-55...+175 °C
T
stg
-55...+150 °C
P
tot
T
C
= 25°C18W
M
d
mounting torque (TO-220) 0.4...0.6 Nm
A = Anode, C = Cathode , TAB = Cathode
TO-220 AB
A
C
A
C (TAB)
C
TO-220 AC
A
C (TAB)
AC
Single
A
TO-252 AA
A
C (TAB)
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
Symbol Conditions Characteristic Values
typ. max.
I
R
T
VJ
= 25°C V
R
= V
RRM
0.7 mA
T
VJ
= 125°C V
R
= V
RRM
0.7 mA
V
F
I
F
= 2 A; T
VJ
= 125°C 1.3 V
I
F
= 2 A; T
VJ
= 25°C 1.3 1.6 V
C
J
V
R
= 100 V; T
VJ
= 125°C 6.4 pF
R
thJC
8.5 K/W
R
thCH
TO-220 0.5 K/W
Weight TO-252 0.3 g
TO-220 2 g
© 2004 IXYS All rights reserved
2 - 2
DGS 4-025A DGS 3-025AS
DGSK 8-025A
435
IXYS reserves the right to change limits, test conditions and dimensions
0,0 0,5 1,0 1,5 2,0
0,001
0,01
0,1
1
10
0,00001 0,0001 0,001 0,01 0,1 1 10
0,01
0,1
1
10
t
s
K/W
0,1 1 10 100 1000
1
10
100
C
J
I
F
A
V
F
V
R
V
pF
V
Z
thJC
T
VJ
= 125°C
Single Pulse
T
VJ
=
125°C
25°C
DGS3-025AS
Fig. 1 typ. forward characteristics
Fig. 2 typ. junction capacity
versus blocking voltage
Fig. 3 typ. thermal impedance junction to case
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide
Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
by majority + minority carriers
V
F
(I
F
)
extraction of excess carriers
causes temperature dependant
reverse recovery (t
rr
, I
RM
, Q
rr
)
delayed saturation leads to V
FR
Rectifier Diode
by majority carriers only
V
F
(I
F
), see Fig. 1
reverse current charges
junction capacity C
J
, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
GaAs Schottky Diode
Outlines TO-252
1 Anode
2 NC
3 Anode
4 Cathode
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
Outline TO-220
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.38 0.56 0.015 0.022
R 2.29 2.79 0.090 0.110

DGSK8-025A

Mfr. #:
Manufacturer:
Description:
DIODE ARRAY SCHOTTKY 250V TO220
Lifecycle:
New from this manufacturer.
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