CY62157CV33LL-70BAXAT

CY62157CV30/33
Document #: 38-05014 Rev. *F Page 4 of 13
Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions
CY62157CV33-70
UnitMin. Typ.
[2]
Max.
V
OH
Output HIGH
Voltage
I
OH
= –1.0 mA
V
CC
= 3.0V
2.4 V
V
OL
Output LOW
Voltage
I
OL
= 2.1 mA
V
CC
= 3.0V
0.4 V
V
IH
Input HIGH Voltage 2.2 V
CC
+ 0.3V V
V
IL
Input LOW Voltage –0.3 0.8 V
I
IX
Input Leakage
Current
GND < V
I
< V
CC
Auto-A –1 +1 µA
Auto-E –10 +10 µA
I
OZ
Output Leakage
Current
GND < V
O
< V
CC
, Output Disabled Auto-A –1 +1 µA
Auto-E –10 +10 µA
I
CC
V
CC
Operating
Supply
Current
f = f
MAX
= 1/t
RC
V
CC
= 3.6V
I
OUT
= 0 mA
CMOS Levels
Auto-A 5.5 12 mA
Auto-E 7 15
f = 1 MHz Auto-A/
Auto-E
1.5 3
I
SB1
Automatic CE
Power-Down
Current—CMOS
Inputs
CE
1
> V
CC
– 0.2V or
CE
2
< 0.2V
V
IN
> V
CC
– 0.2V or
V
IN
< 0.2V,
f = f
max
(Address and Data
Only),
f = 0 (OE,WE,BHE,and BLE)
Auto-A 10 30 µA
Auto-E 10 80 µA
I
SB2
Automatic CE
Power-Down
Current—CMOS
Inputs
CE
1
> V
CC
– 0.2V or
CE
2
< 0.2V
V
IN
> V
CC
– 0.2V or
V
IN
< 0.2V,
f = 0, V
CC
= 3.6V
Auto-A 10 30 µA
Auto-E 10 80 µA
Thermal Resistance
[7]
Parameter Description Test Conditions FBGA Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 3 x 4.5 inch, two-layer printed
circuit board
55 °C/W
Θ
JC
Thermal Resistance
(Junction to Case)
16 °C/W
Note:
7. Tested initially and after any design or process changes that may affect these parameters.
[+] Feedback
CY62157CV30/33
Document #: 38-05014 Rev. *F Page 5 of 13
Capacitance
[7]
Parameter Description Test Conditions Max. Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ.)
6pF
C
OUT
Output Capacitance 8 pF
AC Test Loads and Waveforms
V
CC
Typ
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
OUTPUT V
TH
Equivalent to: THÉVENIN EQUIVALENT
ALL INPUT PULSES
R
TH
R1
Rise TIme: 1 V/ns Fall Time: 1 V/ns
Parameters 3.0V 3.3V Unit
R1 1.105 1.216 ΚΩ
R2 1.550 1.374 ΚΩ
R
TH
0.645 0.645 ΚΩ
V
TH
1.75 1.75 V
Data Retention Characteristics (Over the Operating Range)
Parameter Description Conditions Min. Typ.
[2]
Max. Unit
V
DR
V
CC
for Data Retention 1.5 V
I
CCDR
Data Retention Current V
CC
= 1.5V, CE
1
> V
CC
– 0.2V or
CE
2
< 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
Auto-A 4 20 µA
Auto-E
460µA
t
CDR
[8]
Chip Deselect to Data
Retention Time
0ns
t
R
[8]
Operation Recovery Time t
RC
ns
Data Retention Waveform
[9]
Notes:
8. Full Device AC operation requires linear V
CC
ramp from V
DR
to V
CC(min.)
> 100 µs or stable at V
CC(min.)
>100 µs.
9. BHE
.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.
V
CC(min.)
V
CC(min.)
t
CDR
V
DR
> 1.5 V
DATA RETENTION MODE
t
R
CE
1
or
V
CC
BHE.BLE
CE
2
or
[+] Feedback
CY62157CV30/33
Document #: 38-05014 Rev. *F Page 6 of 13
Switching Characteristics Over the Operating Range
[10]
Parameter Description
70 ns
UnitMin. Max.
Read Cycle
t
RC
Read Cycle Time 70 ns
t
AA
Address to Data Valid 70 ns
t
OHA
Data Hold from Address Change 10 ns
t
ACE
CE
1
LOW and CE
2
HIGH to Data Valid 70 ns
t
DOE
OE LOW to Data Valid 35 ns
t
LZOE
OE LOW to Low-Z
[11]
5ns
t
HZOE
OE HIGH to High-Z
[11, 12]
25 ns
t
LZCE
CE
1
LOW and CE
2
HIGH to Low-Z
[11]
10 ns
t
HZCE
CE
1
HIGH or CE
2
LOW to High-Z
[11, 12]
25 ns
t
PU
CE
1
LOW and CE
2
HIGH to Power-up 0 ns
t
PD
CE
1
HIGH or CE
2
LOW to Power-down 70 ns
t
DBE
BHE/BLE LOW to Data Valid 70 ns
t
LZBE
[11]
BHE/BLE LOW to Low-Z
[13]
5ns
t
HZBE
BHE/BLE HIGH to High-Z
[11, 12]
25 ns
Write Cycle
[14]
t
WC
Write Cycle Time 70 ns
t
SCE
CE
1
LOW and CE
2
HIGH to Write End 60 ns
t
AW
Address Set-up to Write End 60 ns
t
HA
Address Hold from Write End 0 ns
t
SA
Address Set-up to Write Start 0 ns
t
PWE
WE Pulse Width 50 ns
t
BW
BHE/BLE Pulse Width 60 ns
t
SD
Data Set-up to Write End 30 ns
t
HD
Data Hold from Write End 0 ns
t
HZWE
WE LOW to High-Z
[11, 12]
25 ns
t
LZWE
WE HIGH to Low-Z
[11]
5ns
Notes:
10.Test conditions assume signal transition time of 5 ns or less, timing reference levels of V
CC(typ.)
/2, input pulse levels of 0 to V
CC(typ.)
, and output loading of the
specified I
OL
/I
OH
and 30-pF load capacitance.
11. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZBE
is less than t
LZBE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any
given device.
12. t
HZOE
, t
HZCE
, t
HZBE
, and t
HZWE
transitions are measured when the outputs enter a high-impedance state.
13.When both byte enables are toggled together this value is 10 ns.
14.The internal Write time of the memory is defined by the overlap of WE
, CE
1
= V
IL
, BHE and/or BLE = V
IL
, CE
2
= V
IH
. All signals must be ACTIVE to initiate a
Write and any of these signals can terminate a Write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal
that terminates the Write.
[+] Feedback

CY62157CV33LL-70BAXAT

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
IC SRAM 8M PARALLEL 48FBGA MoBL
Lifecycle:
New from this manufacturer.
Delivery:
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