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2STW200

P1-P3P4-P6P7-P7
Preliminary data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
March 2010 Doc ID 17235 Rev 1 1/7
7
2STW100
2STW200
Complementary power Darlington transistors
Features
■ Complementary NPN - PNP transistors
■ Monolithic Darlington configuration
Applications
■ Audio power amplifier
■ DC-AC converter
■ Low voltage DC motor drive
■ General purpose switching applications
Description
The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration.
Figure 1. Internal schematic diagrams
TO-247
1
2
3
Table 1. Device summary
Order code Marking Package Packaging
2STW100 2STW100
TO-247 Tube
2STW200 2STW200
www.st.com
Absolute maximun ratings 2STW100, 2STW200
2/7 Doc ID 17235 Rev 1
1 Absolute maximun ratings
Note: For PNP type voltage and current values are negative
Table 2. Absolute maximum ratings
Symbol Parameter
Value
UnitNPN 2STW100
PNP 2STW200
V
CBO
Collector-emitter voltage (I
E
= 0) 80 V
V
CEO
Collector-emitter voltage (I
B
= 0) 80 V
I
C
Collector current 25 A
I
CM
Collector peak current (t
P
< 5 ms) 40 A
I
B
Base current 6 A
I
BM
Base peak current (t
P
< 5 ms) 10 A
P
TOT
Total dissipation at T
c
≤ 25 °C 130 W
T
STG
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case max 0.96 °C/W
2STW100, 2STW200 Electrical characteristics
Doc ID 17235 Rev 1 3/7
2 Electrical characteristics
T
case
= 25 °C; unless otherwise specified.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off current
(I
E
= 0)
V
CE
= 80 V 0.5 mA
I
CEV
Collector cut-off current
(V
BE
= - 0.3 V)
V
CE
= 80 V 0.1 mA
I
CEO
Collector cut-off current
(I
B
= 0)
V
CE
= 60 V 0.5 mA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 5 V 2 mA
V
CEO(sus)
(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
For PNP type voltage and current values are negative.
Collector-emitter
sustaining voltage (I
B
= 0)
I
C
= 50 mA 80 V
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= 5 A I
B
= 20 mA
I
C
= 10 A I
B
= 40 mA
I
C
= 20 A I
B
= 80 mA
1.2
1.75
3.5
V
V
V
V
BE(sat)
(1)
Base-emitter saturation
voltage
I
C
= 20 A I
B
= 80 mA 3.3 V
V
BE
(1)
Base-emitter voltage I
C
= 10 A V
CE
= 3 V 1 3 V
h
FE
(1)
DC current gain
I
C
= 5 A V
CE
= 3 V
I
C
= 10 A V
CE
= 3 V
I
C
= 20 A V
CE
= 3 V
600
500
300
15000
12000
6000
V
F
(1)
Diode forward voltage I
F
= 10 A TBD V
I
s/b
Second breakdown
current
V
CE
= 25 V t = 500 ms TBD A
P1-P3P4-P6P7-P7

2STW200

Mfr. #:
Buy 2STW200
Manufacturer:
STMicroelectronics
Description:
Darlington Transistors Comp Darlington PWR 80V 25A 130W Trans
Lifecycle:
New from this manufacturer.
Delivery:
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