Product Standards
Transistors with Built-in Resistor
DRA2114T0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page
+85 °COperating ambient temperature Topr -40 to
1.
2.
3.
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Parameter Symbol Rating Unit
Marking Symbol:
LD
Code
Base
Emitter
TO-236AA/SOT-23
Panasonic
Packaging
Mini3-G3-B
JEITA
DRA2114T0L
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC2114T
Features
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE with excellent linearity
SC-59A
Collector
Unit: mm
Internal Connection
Resistance
value
1of3
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO -50 V
Collector-emitter voltage (Base open) VCEO -50 V
Collector current IC -100 mA
Total power dissipation PT 200 mW
Symbol Conditions
Storage temperature Tstg -55 to
Collector-base voltage (Emitter open) VCBO IC = -10 μA, IE = 0 -50 V
Parameter
Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V
Collector-base cutoff current (Emitter open)
ICBO VCB = -50 V, IE = 0 -0.1 μA
Collector-emitter cutoff current (Base open)
ICEO VCE = -50 V, IB = 0 -0.5 μA
Emitter-base cutoff current (Collector open)
IEBO VEB = -6 V, IC = 0 -0.01 mA
Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 160 460 -
Collector-emitter saturation voltage VCE(sat) IC = -10 mA, IB = -0.5 mA -0.25 V
Input voltage
Vi(on) VCE = -0.2 V, IC = -5 mA
Vi(off) VCE = -5 V, IC = -100 μA
-1.2 V
-0.4 V
10 +30%
k
Input resistance R1 -30%
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
R1
10
k
+150 °C
Junction temperature Tj 150 °C
2.8
2.9
1.1
1.5
0.4
1.9
0.16
1
3
(0.95)(0.95)
2
C
B
R
1
E
