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CM200DY-24NF

P1-P3P4-P4
Feb. 2009
4
MITSUBISHI IGBT MODULES
CM200DY-24NF
HIGH POWER SWITCHING USE
10
1
10
2
23 57
10
3
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
t
rr
I
rr
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
Conditions:
V
CC
= 600V
V
GE
= ±15V
R
G
= 1.6Ω
T
j
= 25°C
Inductive load
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
23 57 23 57
Single Pulse
T
C
= 25°C
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
TIME (s)
IGBT part:
Per unit base =
R
th(j–c)
= 0.11K/W
FWDi part:
Per unit base =
R
th(j–c)
= 0.19K/W
0
4
8
16
12
20
0 800400 1600 20001200
600200 1400 18001000
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
V
CC
= 600V
V
CC
= 400V
I
C
= 200A
P1-P3P4-P4

CM200DY-24NF

Mfr. #:
Buy CM200DY-24NF
Manufacturer:
Description:
Trans IGBT Module N-CH 1.2KV 200A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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