V
RRM
= 50 V - 600 V
I
F
= 200 A
Features
• High Surge Capability Three Tower Package
• Types up to 600 V V
RRM
Parameter Symbol MURT20005 (R) MURT20010 (R) Unit
Re
etitive
eak reverse
Silicon Super Fast
Recover
Diode
MURT20005 thru MURT20020R
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions MURT20020 (R)
voltage
RRM
RMS reverse voltage
V
RMS
35 71 V
DC blocking voltage
V
DC
50 100 V
Continuous forward current
I
F
200 200 A
Operating temperature
T
j
-40 to 175 -40 to 175 °C
Storage temperature
T
stg
-40 to 175 -40 to 175 °C
Parameter Symbol MURT20005 (R) MURT20010 (R) Unit
Diode forward voltage 1.3 1.3
25 25 μA
11 mA
Recovery Time
Maximum reverse recovery
time
T
RR
75 75 nS
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
0.18 0.18 °C/W
MURT20020 (R)
-40 to 175
-40 to 175
1.3
25
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
A
200
2000
V
R
= 50 V, T
j
= 25 °C
I
F
= 100 A, T
j
= 25 °C
T
C
≤ 140 °C
Conditions
2000 2000
T
C
= 25 °C, t
p
= 8.3 ms
141
200
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
V
R
= 50 V, T
j
= 125 °C
V
75
1
0.18
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