SIT8004AC-23-33E-150.00000Y

SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Rev. 1.0 Revised November 11, 2010
SiT8004
Low Power Oscillator for High Frequency Applications
Lowest power, high frequency oscillator with 6.3 mA typical active current
125MHz to 150MHz frequency range
LVCMOS/LVTTL compatible output
Excellent frequency stability over temperature, ±20 PPM
Ultra low standby current, 1.2 µA
Standby or output enable modes
Four industry-standard packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm
Drop-in replacement of quartz
Ultra short lead time
All-silicon device with outstanding reliability of 2 FIT (10x improvement over quartz-based devices),
enhancing system mean-time-to-failure (MTBF)
Ideal for high frequency applications in networking, storage, computer servers and communications
Ideal for high speed protocals: GPON, EPON, Ethernet, SATA/SAS, DDR, PCI
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Condition
Output Frequency Range f 125 - 150 MHz
Frequency Stability F_stab -20 +20 PPM Inclusive of: Initial stability, operating temperature, rated power,
supply voltage change, load change, shock and vibration
± 20 PPM available in extended commercial temperature only
-25 +25 PPM
-50 +50 PPM
Aging Ag –1.0 1.0 PPM 1st year at 2C
Operating Temperature Range T_use -20 +70 °C Extended Commercial
-40 +85 °C Industrial
Supply Voltage Vdd 2.25 2.5 2.75 V
2.52 2.8 3.08 V
2.97 3.3 3.63 V
Current Consumption Idd 6.7 8 mA No load condition, f = 125 MHz, Vdd = 3.3 V
6.2 7 mA No load condition, f = 125 MHz, Vdd = 2.5 V or 2.8 V
Standby Current I_std 2.4 4.3 µA ST = GND, Vdd = 3.3 V, Output is Weakly Pulled Down
1.2 2.2 µA ST = GND, Vdd = 2.5 or 2.8 V, Output is Weakly Pulled Down
Duty Cycle DC 40 50 60 % All Vdds
Rise/Fall Time Tr, Tf 1 2 ns 20% - 80% Vdd=2.5 V, 2.8 V or 3.3 V, 15 pf load
Output Voltage High VOH 90% Vdd IOH = -4 mA (Vdd = 3.3 V)
IOH = -3 mA (Vdd = 2.8 V and Vdd = 2.5 V)
Output Voltage Low VOL 10% Vdd IOL = 4 mA (Vdd = 3.3 V)
IOL = 3 mA (Vdd = 2.8 V and Vdd = 2.5 V)
Output Load Ld 15 pF At 125MHz and max supply voltage. Contact SiTime for higher output
load option
Input Voltage High VIH 70% Vdd Pin 1, OE or ST
Input Voltage Low VIL 30% Vdd Pin 1, OE or ST
Startup Time T_start 10 ms Measured from the time Vdd reaches its rated minimum value
Resume Time T_resume 3.0 3.8 ms Measured from the time ST pin crosses 50% threshold
RMS Period Jitter T_jitt 4.5 ps f = 125 MHz, Vdd = 2.5 V, 2.8 V or 3.3 V
RMS Phase Jitter (random) T_phj 0.5 ps f = 125 MHz, Integration bandwidth = 900 kHz to 7.5 MHz,
VDD = 2.5 V, 2.8 V, or 3.3 V
Features, Benefits and Applications
Specifications
SiT8004
Low Power Oscillator for High Frequency Applications
Rev. 1.0 Page 2 of 4
www.sitime.com
Pin Description Tables
Absolute Maximum Table
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC
is only guaranteed within the operational specifications, not at absolute maximum ratings.
Environmental Compliance
Startup and Resume Timing Diagram
Pin #1 Functionality Pin Map
OE Pin Connection
H or Open: specified frequency output 1 OE/ST
L: output is high impedance 2 GND
ST 3 CLK
H or Open: specified frequency output 4 VDD
L: output is low level (weak pull down). Oscillation stops
Parameter Min. Max. Unit
Storage Temperature -65 150 °C
VDD -0.5 4 V
Electrostatic Discharge 2000 V
Theta JA (with copper plane on VDD and GND) 75 °C/W
Theta JC (with PCB traces of 0.010 inch to all pins) 24 °C/W
Soldering Temperature (follow standard Pb free soldering guidelines) 260 °C
Number of Program Writes 1 NA
Program Retention over -40 to 125°C, Process, VDD (0 to 3.65 V) 1,000+ years
Parameter Condition/Test Method
Mechanical Shock MIL-STD-883F, Method 2002
Mechanical Vibration MIL-STD-883F, Method 2007
Temperature Cycle JESD22, Method A104
Solderability MIL-STD-883F, Method 2003
Moisture Sensitivity Level MSL1 @ 26C
Specifications (Cont.)
50% Vdd
Vdd
ST Voltage
CLK Output
T_resum e
T_resum e: Time to resum e from ST
90% Vdd
Vdd
Pin 4 Voltage
CLK Output
T_start
T_start: Time to start from power-off
(ST/OE Mode)
(ST M ode Only)
SiT8004
Low Power Oscillator for High Frequency Applications
Rev. 1.0 Page 3 of 4
www.sitime.com
Notes:
1. Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
2. A capacitor of value 0.1 µF between Vdd and GND is recommended.
Package Size – Dimensions (Unit: mm)
[2]
Recommended Land Pattern (Unit: mm)
[3]
2.5 x 2.0 x 0.75 mm
3.2 x 2.5 x 0.75 mm
5.0 x 3.2 x 0.75 mm
7.0 x 5.0 x 0.90 mm
Dimensions and Land Patterns
2.5 ± 0.10
2.0 ± 0.10
1.1
1.00
0.75
0.5
0.75 ± 0.05
YXXXX
#1
#2
#4#3
#2
#1
#3#4
1.9
1.1
1.0
1.5
3.2 ± 0.15
2.5 ± 0.15
2.1
0.9
0.7
0.9
0.75 ± 0.05
#1
#2
#4#3
#2
#1
#3#4
YXXXX
5.0 ± 0.15
3.2 ± 0.15
2.39
0.8
1.15
1.1
0.75 ± 0.05
#1#2
#4#3
#2
#1
#3#4
YXXXX
2.54
1.5
1.6
2.2
5.0 ± 0.15
1.4
1.1
5.08
7.0 ± 0.15
2.6
1.7
0.90 ± 0.10
YXXXX
#1#2
#4#3
#2
#1
#3#4
5.08
3.81
2.2
2.0

SIT8004AC-23-33E-150.00000Y

Mfr. #:
Manufacturer:
Description:
Oscillator MEMS 150MHz ±50ppm (Stability) 15pF LVCMOS/LVTTL 60% 3.3V 4-Pin QFN SMD T/R
Lifecycle:
New from this manufacturer.
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