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IRFBC40AS

P1-P3P4-P6P7-P9P10-P10
IRFBC40AS, SiHFBC40AS
www.vishay.com
Vishay Siliconix
S16-0763-Rev. D, 02-May-16
1
Document Number: 91113
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Low gate charge Q
g
results in simple drive
requirement
• Improved gate, avalanche and dynamic dV/dt
ruggedness
• Fully characterized capacitance and avalanche
voltage and current
• Effective C
oss
specified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
APPLICATIONS
• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching
TYPICAL SMPS TOPOLOGIES
• Single transistor forward
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 29.6 mH, R
g
= 25 , I
AS
= 6.2 A (see fig. 12).
c. I
SD
6.2 A, dI/dt 88 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. Uses IRFBC40A, SiHFBC40A data and test conditions.
PRODUCT SUMMARY
V
DS
(V) 600
R
DS(on)
()V
GS
= 10 V 1.2
Q
g
max. (nC) 42
Q
gs
(nC) 10
Q
gd
(nC) 20
Configuration Single
N-Channel MOSFET
G
D
S
D
2
PAK (TO-263)
G
D
S
Available
Available
ORDERING INFORMATION
Package D
2
PAK (TO-263) D
2
PAK (TO-263) D
2
PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHFBC40AS-GE3 SiHFBC40ASTRL-GE3
a
SiHFBC40ASTRR-GE3
a
Lead (Pb)-free
IRFBC40ASPbF IRFBC40ASTRLPbF
a
IRFBC40ASTRRPbF
a
SiHFBC40AS-E3 SiHFBC40ASTL-E3
a
SiHFBC40ASTR-E3
a
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
600
V
Gate-Source Voltage V
GS
± 30
Continuous Drain Current
e
V
GS
at 10 V
T
C
= 25 °C
I
D
6.2
AT
C
= 100 °C 3.9
Pulsed Drain Current
a, e
I
DM
25
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
b
E
AS
570 mJ
Repetitive Avalanche Current
a
I
AR
6.2 A
Repetitive Avalanche Energy
a
E
AR
13 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
125 W
Peak Diode Recovery dV/dt
c, e
dV/dt 6.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak temperature)
d
for 10 s 300
IRFBC40AS, SiHFBC40AS
www.vishay.com
Vishay Siliconix
S16-0763-Rev. D, 02-May-16
2
Document Number: 91113
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
OSS
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
d. Uses IRHFBC40A, SiHFBC40A data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-40
°C/W
Maximum Junction-to-Case (Drain) R
thJC
-1.0
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 600 - - V
V
DS
Temperature Coefficient
V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA
d
-0.66-
V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 600 V, V
GS
= 0 V - - 25
μA
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 3.7 A
b
--1.2
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 3.7 A 3.4 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 1036 -
pF
Output Capacitance C
oss
- 136 -
Reverse Transfer Capacitance C
rss
-7.0-
Output Capacitance C
oss
V
GS
= 0 V
V
DS
= 1.0 V, f = 1.0 MHz - 1487 -
V
DS
= 480 V, f = 1.0 MHz - 36 -
Output Capacitance Effective C
oss
eff. V
DS
= 0 V to 480 V
c
-48-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 6.2 A, V
DS
= 480 V,
see fig. 6 and 13
b
--42
nC Gate-Source Charge Q
gs
--10
Gate-Drain Charge Q
gd
--20
Turn-On Delay Time t
d(on)
V
DD
= 300 V, I
D
= 6.2 A,
R
g
= 9.1 , R
D
= 47
see fig. 10
b
-13-
ns
Rise Time t
r
-23-
Turn-Off Delay Time t
d(off)
-31-
Fall Time t
f
-18-
Gate Input Resistance R
g
f = 1 MHz, open drain 0.6 - 3.9
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--6.2
A
Pulsed Diode Forward Current
a
I
SM
--25
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 6.2 A, V
GS
= 0 V
b
--1.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 6.2 A, dI/dt = 100 A/μs
b
- 431 647 ns
Body Diode Reverse Recovery Charge Q
rr
-1.82.8μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
S
D
G
IRFBC40AS, SiHFBC40AS
www.vishay.com
Vishay Siliconix
S16-0763-Rev. D, 02-May-16
3
Document Number: 91113
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
P1-P3P4-P6P7-P9P10-P10

IRFBC40AS

Mfr. #:
Buy IRFBC40AS
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 844-IRFBC40ASPBF
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