VS-18TQ045S-M3

VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3
www.vishay.com
Vishay Semiconductors
Revision: 25-Feb-14
1
Document Number: 94928
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 18 A
FEATURES
175 °C T
J
operation
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Designed and qualified according to JEDEC
®
-JESD 47
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-18TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
18 A
V
R
35 V, 40 V, 45 V
V
F
at I
F
0.53 V
I
RM
25 mA at 125 °C
T
J
max. 175 °C
E
AS
24 mJ
Package TO-263AB (D
2
PAK)
Diode variation Single die
Anode
1
3
Base
cathode
2
N/C
D
2
PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 18 A
V
RRM
Range 35 to 45 V
I
FSM
t
p
= 5 μs sine 1800 A
V
F
18 A
pk
, T
J
= 125 °C 0.53 V
T
J
Range -55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-18TQ035S-M3 VS-18TQ040S-M3 VS-18TQ045S-M3 UNITS
Maximum DC reverse voltage V
R
35 40 45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 149 °C, rectangular waveform 18 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
1800
A
10 ms sine or 6 ms rect. pulse 390
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 3.6 A, L = 3.7 mH 24 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
3.6 A
VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3
www.vishay.com
Vishay Semiconductors
Revision: 25-Feb-14
2
Document Number: 94928
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
18 A
T
J
= 25 °C
0.60
V
36 A 0.72
18 A
T
J
= 125 °C
0.53
36 A 0.67
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
2.5
mA
T
J
= 125 °C 25
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 1400 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
-55 to 175 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
1.50
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style D
2
PAK
18TQ035S
18TQ040S
18TQ045S
VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3
www.vishay.com
Vishay Semiconductors
Revision: 25-Feb-14
3
Document Number: 94928
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
100
I
F
- Instantaneous Forward
Current (A)
V
FM
- Forward Voltage Drop (V)
0 0.4 0.8 1.2 1.4 1.6
1000
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.2 0.6 1.0
0.1
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
0 5 25 351510 30 4020 45
0.0001
0.001
0.01
0.1
1
10
100
1000
T
J
= 125 °C
T
J
= 175 °C
T
J
= 150 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
01020 4030 50
100
10 000
1000
T
J
= 25 °C
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
0.00001 0.0001 0.001 0.01 0.1 1 10 100
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C

VS-18TQ045S-M3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - D2PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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