2SA2072TLQ Datasheet 2SA2071T100Q, 2SA2072TLQ | P1-P3

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Power transistor (60V, 3A)

2SA2071

Features Dimensions (Unit : mm)

1) High speed switching. (Tf : Typ. : 20ns

at IC =



3A)

2) Low saturation voltage, typically

(Typ. : 200mV at IC =



2A, IB =



0.2A)

3) Strong discharge power for inductive load and capacitance load.

4) Complements the 2SC5824

Applications

Low Frequency Amplifier

High speed switching

Structure

PNP Silicon epitaxial planar transistor

Packaging specifications

2SA2071

T100

1000

Type

Package

Code

Taping

Basic ordering unit (pieces)

Absolute maximum ratings (Ta=25C)

Parameter Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

Tj

Tstg

Limits

−60

−6

−3

500

2.0

150

−55 to +150

−6

∗

1

Unit

V

A

mW

°C

W

∗

2

∗1 Pw=100ms

∗2 Mounted on a 40×40×0.7 (mm) ceramic substrate

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

MPT3

Each lead has same dimensions

Abbreviated symbol : UN

(1)Base(Gate)

(2)Collector(Drain)

(3)Emitter(Sourse)

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2011.03 - Rev.C

Data Sheet 2SA2071

Electrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions

BV

CBO

−60 −−VI

C

= −100μA

I

C

= −1mA

I

E

= −100μA

V

CB

= −40V

V

EB

= −4V

I

C

= −2A, I

B

= −0.2A

V

CE

= −2V, I

C

= −100mA

V

CE

= −10V, I

E

=10mA, f=10MHz

V

CB

= −10V, I

E

=0mA, f=1MHz

BV

CEO

−60 −−V

BV

EBO

−6 −−V

I

CBO

−−−1.0 μA

I

EBO

−−−1.0 μA

V

CE (sat)

−−200 −500 mV

h

FE

120 − 270 −

f

T

− 180 − MHz

Cob − 50 − pF

Ton − 20 − ns

Tstg − 150 − ns

Tf − 20 − ns

I

C

= −3A

I

B1

= −300mA

I

B2

=300mA

V

CC

−25V

∗2

∗1

∗1 Non repetitive pulse

∗2 See switching charactaristics measurement cicuits

Turn-on time

Storage time

Fall time

Transition frequency

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

Collector output capacitance

h

FE RANK

Q

120−270

Electrical characteristic curves

−0.01 −0.1 −1 −1

0

COLLECTOR CURRENT : I

C

(A)

Fig.1 Switching Time

10

100

SWITCHING TIME : (ns)

1000

Ta=25°C

V

CC

= −25V

I

C

/I

B

=10/1

Tstg

Tf

Ton

−0.001 −0.01 −0.1 −1 −1

0

COLLECTOR CURRENT : I

C

(A)

Fig.2 DC Current Gain vs.

Collector Current (Ι)

1

10

100

DC CURRENT GAIN : h

FE

1000

V

CE

= −2V

Ta=25°C

Ta= −40°C

Ta=125°C

−0.001 −0.01 −0.1 −1 −1

0

COLLECTOR CURRENT : I

C

(A)

Fig.3 DC Current Gain vs.

Collector Current (ΙΙ)

1

10

100

DC CURRENT GAIN : h

FE

1000

Ta=25°C

V

CE

= −5V

V

CE

= −3V

V

CE

= −2V

−0.001 −0.01 −0.1 −1 −1

0

COLLECTOR CURRENT : I

C

(A)

Fig.4 Collector-Emitter Saturatio

n

Voltage vs.

Collector Current (Ι)

−0.01

−0.1

−1

COLLECTOR SATURATION

VOLTAGE : V

CE (sat)

(V)

−10

Ta=25°C

Ta= −40°C

Ta=125°C

I

C

/I

B

=10/1

I

C

/I

B

=10/1

Ta=25°C

−0.001 −0.01 −0.1 −1 −1

0

COLLECTOR CURRENT : I

C

(A)

Fig.5 Collector-Emitter Saturatio

n

Voltage vs.

Collector Current (ΙΙ)

−0.01

−0.1

−1

COLLECTOR SATURATION

VOLTAGE : V

CE (sat)

(V)

−10

I

C

/I

B

=20/1

COLLECTOR CURRENT : I

C

(A)

Fig.6 Base-Emitter Saturation

Voltage vs. Collecter Curre

nt

−0.01

−0.1

−1

BASE EMITTER SATURATION

VOLTAGE : V

BE (sat)

(V)

−10

I

C

/I

B

=10/1

Ta=125°C

Ta=25°C

Ta= −40°C

−0.001 −0.01 −0.1 −1 −1

0

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2011.03 - Rev.C

Data Sheet 2SA2071

0 −0.5 −1 −1

.5

BASE TO EMITTER VOLTAGE : VBE (V

)

Fig.7 Grounded Emitter

Propagation Characteristi

cs

−0.01

−0.1

−1

COLLECTOR CURRENT : I

C

(A)

−10

V

CE

= −2V

Ta= −40°C

Ta=25°C

Ta=125°C

0.001 0.01 0.1 1 1

0

EMITTER CURRENT : I

E

(A)

Fig.8 Transition Frequency

TRANSITION FREQUENCY : fT (MHz)

1000

Ta=25°C

V

CE

= −10V

1

10

100

−0.1 −1 −10 −10

0

COLLECTOR TO BASE VOLTAGE : V

CB

(V

)

Fig.9

Collector Output Capacitance

1

10

100

COLLECTOR OUTPUT

CAPACITANCE : Cob (pF)

1000

Ta=25°C

f=1MHz

Switching characteristics measurement circuits

V

IN

P

W

R

L=

8.3Ω

I

C

I

B1

I

B2

P

W

50μs

DUTY CYCLE 1%

V

CC

−25

V

Ton Tstg Tf

I

C

I

B2

I

B1

10%

90%

B

ASE CURRENT

W

AVEFORM

C

OLLECTOR CURRENT

W

AVEFORM

2SA2072TLQ

2SA2072TLQ

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