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PIP3208-A,127

P1-P3P4-P6P7-P8
Philips Semiconductors Product Specification
PowerMOS transistor PIP3208-A
TOPFET high side switch
INPUT CHARACTERISTICS
9 V ≤ V
BG
≤ 16 V. Limits are at -40˚C ≤ T
mb
≤ 150˚C and typicals at T
mb
= 25 ˚C unless otherwise stated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
I
Input current V
IG
= 5 V 20 90 160 µA
V
IG
Input clamping voltage I
I
= 200 µA 5.5 7 8.5 V
V
IG(ON)
Input turn-on threshold voltage - 2.4 3 V
V
IG(OFF)
Input turn-off threshold voltage 1.5 2.1 - V
∆V
IG
Input turn-on hysteresis - 0.3 - V
I
I(ON)
Input turn-on current V
IG
= 3 V - - 100 µA
I
I(OFF)
Input turn-off current V
IG
= 1.5 V 10 - - µA
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C ≤ T
mb
≤ 150˚C and typicals at T
mb
= 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
SG
Status clamping voltage I
S
= 100 µA 5.5 7 8.5 V
V
SG
Status low voltage I
S
= 100 µA--1V
T
mb
= 25˚C - 0.7 0.8 V
I
S
Status leakage current V
SG
= 5 V - - 15 µA
T
mb
= 25˚C - 0.1 1 µA
I
S
Status saturation current
1
V
SG
= 5 V 2 7 12 mA
Application information
R
S
External pull-up resistor - 47 - kΩ
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load can be detected in the on-state. Refer to TRUTH TABLE.
Limits are at -40˚C ≤ T
mb
≤ 150˚C and typical is at T
mb
= 25 ˚C.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Open circuit detection 9 V ≤ V
BG
≤ 35 V
I
L(TO)
Low current detect threshold 50 - 340 mA
T
j
= 25˚C 85 170 255 mA
∆I
L(TO)
Hysteresis - 30 - mA
1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
prevent possible interference with normal operation of the device.
July 2001 4 Rev 1.000
Philips Semiconductors Product Specification
PowerMOS transistor PIP3208-A
TOPFET high side switch
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C ≤ T
mb
≤ 150˚C and typicals at T
mb
= 25 ˚C. Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Undervoltage
V
BG(UV)
Low supply threshold voltage
1
2 4.2 5.5 V
∆V
BG(UV)
Hysteresis - 0.5 - V
Overvoltage
V
BG(OV)
High supply threshold voltage
2
40 45 50 V
∆V
BG(OV)
Hysteresis - 1 - V
TRUTH TABLE
ABNORMAL CONDITIONS
DETECTED LOAD
INPUT SUPPLY LOAD OUTPUT STATUS DESCRIPTION
UV OV LC SC OT
L X X X X X OFF H off
H 0 0 0 0 0 ON H on & normal
H 0 0 1 0 0 ON L on & low current detect
H 1 0 X X X OFF H supply undervoltage lockout
H 0 1 X 0 0 OFF H supply overvoltage shutdown
H 0 0 0 1 X OFF L SC tripped
H 0 0 0 0 1 OFF L OT shutdown
3
KEY TO ABBREVIATIONS
L logic low UV undervoltage
H logic high OV overvoltage
X don’t care LC low current or open circuit load
0 condition not present SC short circuit
1 condition present OT overtemperature
1 Undervoltage sensor causes the device to switch off and reset.
2 Overvoltage sensor causes the device to switch off to protect its load.
3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD
PROTECTION CHARACTERISTICS.
July 2001 5 Rev 1.000
Philips Semiconductors Product Specification
PowerMOS transistor PIP3208-A
TOPFET high side switch
OVERLOAD PROTECTION CHARACTERISTICS
5.5 V ≤ V
BG
≤ 35 V, limits are at -40˚C ≤ T
mb
≤ 150˚C and typicals at T
mb
= 25 ˚C unless otherwise stated.
Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Overload protection V
BL
= V
BG
I
L(lim)
Load current limiting V
BG
≥ 9 V 6 9 12 A
Short circuit load protection
V
BL(TO)
Battery load threshold voltage
1
V
BG
= 16 V 8 10 12 V
V
BG
= 35 V 15 20 25 V
t
d sc
Response time
2
V
BL
> V
BL(TO)
- 180 250 µs
Overtemperature protection
T
j(TO)
Threshold junction 150 170 190 ˚C
temperature
3
∆T
j(TO)
Hysteresis - 10 - ˚C
SWITCHING CHARACTERISTICS
T
mb
= 25 ˚C, 9 V ≤ V
BG
≤ 16 V, for resistive load R
L
= 13 Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
During turn-on to V
IG
= 5 V
t
d on
Delay time to 10% V
L
-2840µs
dV/dt
on
Rate of rise of load voltage 30% to 70% V
L
- 0.75 1 V/µs
t
on
Total switching time to 90% V
L
-6090µs
During turn-off to V
IG
= 0 V
t
d off
Delay time to 90% V
L
-3654µs
dV/dt
off
Rate of fall of load voltage 70% to 30% V
L
- 0.75 1 V/µs
t
off
Total switching time to 10% V
L
-6090µs
CAPACITANCES
T
mb
= 25 ˚C; f = 1 MHz; V
IG
= 0 V. designed in parameters.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
ig
Input capacitance V
BG
= 13 V - 15 20 pF
C
bl
Output capacitance V
BL
= 13 V - 100 140 pF
C
sg
Status capacitance V
SG
= 5 V - 11 15 pF
1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. After short circuit protection has
operated, the input voltage must be toggled low for the switch to resume normal operation.
2 Measured from when the input goes high.
3 After cooling below the reset temperature the switch will resume normal operation.
July 2001 6 Rev 1.000
P1-P3P4-P6P7-P8

PIP3208-A,127

Mfr. #:
Buy PIP3208-A,127
Manufacturer:
NXP Semiconductors
Description:
TOPFET PWR SWITCH TO220-5
Lifecycle:
New from this manufacturer.
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