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UG8ATHE3/45

P1-P3P4-P5
UG8xT, UGF8xT, UGB8xT
www.vishay.com
Vishay General Semiconductor
Revision: 24-Feb-16
1
Document Number: 88765
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier
FEATURES
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder dip 275 °C max., 10 s per JESD 22-B106
(for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, inverters, freewheeling diodes, DC/DC converters,
and other power switching application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
8.0 A
V
RRM
50 V to 200 V
I
FSM
150 A
t
rr
20 ns
V
F
at I
F
0.95 V
T
J
max. 150 °C
Package
TO-220AC, ITO-220AC,
TO-263AB
Diode variations Single die
CASE
PIN 2
PIN 1
TO-220AC
UG8xT
ITO-220AC
UGF8xT
UGB8xT
PIN 1
PIN 2
K
HEATSINK
1
2
1
2
K
PIN 2
PIN 1
TO-263AB
1
2
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UG8AT UG8BT UG8CT UG8DT UNIT
Max. repetitive peak reverse voltage V
RRM
50 100 150 200 V
Max. RMS voltage V
RMS
35 70 105 140 V
Max. DC blocking voltage V
DC
50 100 150 200 V
Max. average forward rectified current at T
C
= 100 °C I
F(AV)
8.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
150 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
Isolation voltage (ITO-220AC only)
from terminals to heatsink t = 1 min
V
AC
1500 V
UG8xT, UGF8xT, UGB8xT
www.vishay.com
Vishay General Semiconductor
Revision: 24-Feb-16
2
Document Number: 88765
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL UG8AT UG8BT UG8CT UG8DT UNIT
Max. instantaneous
forward voltage
8.0 A
T
J
= 150 °C V
F
(1)
1.0
V 20.0 A 1.2
5.0 A 0.95
Max. DC reverse current at rated
DC blocking voltage
T
J
= 25 °C
I
R
10
μA
T
J
= 100 °C 300
Max. reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
20 ns
Max. reverse recovery time
I
F
= 8.0 A, V
R
= 30 V,
dI/dt = 50 A/μs,
I
rr
= 10 % I
RM
T
J
= 25 °C
t
rr
30
ns
T
J
= 100 °C 50
Max. recovered stored charged
I
F
= 8.0 A, V
R
= 30 V,
dI/dt = 50 A/μs
T
J
= 25 °C
Q
rr
20
nC
T
J
= 100 °C 45
Typical junction capacitance 4.0 V, 1 MHz C
J
45 pF
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UG8xT UGF8xT UGB8xT UNIT
Typical thermal resistance from junction to case R
JC
(1)
4.0 5.0 4.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AC UG8DT-E3/45 1.80 45 50/tube Tube
ITO-220AC UGF8DT-E3/45 1.95 45 50/tube Tube
TO-263AB UGB8DT-E3/45 1.33 45 50/tube Tube
TO-263AB UGB8DT-E3/81 1.33 81 800/reel Tape and reel
TO-220AC UG8DTHE3/45
(1)
1.80 45 50/tube Tube
ITO-220AC UGF8DTHE3/45
(1)
1.95 45 50/tube Tube
TO-263AB UGB8DTHE3/45
(1)
1.33 45 50/tube Tube
TO-263AB UGB8DTHE3/81
(1)
1.33 81 800/reel Tape and reel
UG8xT, UGF8xT, UGB8xT
www.vishay.com
Vishay General Semiconductor
Revision: 24-Feb-16
3
Document Number: 88765
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Reverse Switching Characteristics
Fig. 6 - Typical Junction Capacitance
0
6
8
10
12
7550250 100 125 150 175
Average Forward Rectified Current (A)
Ambient Temperature (°C)
4
2
Resistive or Inductive Load
10
100
1000
1 10010
Peak Forward Surge Current (A)
T
C
= 100 °C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
0.01
0.1
10
100
1
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
6040200 10080
0.01
0.1
10
1
100
1000
T
J
= 100 °C
T
J
= 125 °C
T
J
= 25 °C
Instantaneous Reverse Leakage
Current (µA)
Percent of Rated Peak Reverse Voltage (%)
0
30
40
50
60
7550250 100 125 150 175
Recovered Store Charge/Reverse
Recovery Time (nC/ns)
Junction Temperature (°C)
20
10
I
F
= 4.0 A
V
R
= 30 V
20 A/µs
50 A/µs
100 A/µs
50 A/µs
150 A/µs
20 A/µs
t
rr
Q
rr
dI/dt = 150 A/µs
dI/dt = 100 A/µs
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 101 100
100
10
1
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
P1-P3P4-P5

UG8ATHE3/45

Mfr. #:
Buy UG8ATHE3/45
Manufacturer:
Vishay
Description:
Rectifiers 50 Volt 8.0A 20ns 150 Amp IFSM
Lifecycle:
New from this manufacturer.
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