©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
FJN4309R
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -40 V
V
CEO
Collector-Emitter Voltage -40 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -100 mA
P
C
Collector Power Dissipation 300 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= -100µA, I
E
=0 -40 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -1mA, I
B
=0 -40 V
I
CBO
Collector Cut-off Current V
CB
= -30V, I
E
=0 -0.1 µA
h
FE
DC Current Gain V
CE
= -5V, I
C
= -1mA 100 600
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1mA -0.3 V
C
ob
Output Capacitance V
CB
= -10V, I
E
=0
f=1MHz
5.5 pF
f
T
Current Gain Bandwidth Product V
CE
= -10V, I
C
= -5mA 200 MHz
R Input Resistor 3.2 4.7 6.2 KΩ
FJN4309R
Switching Application
(Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=4.7KΩ)
• Complement to FJN3309R
Equivalent Circuit
B
E
C
R
1. Emitter 2. Collector 3. Base
TO-92
1
