GSIB620, GSIB640, GSIB660, GSIB680
www.vishay.com
Vishay General Semiconductor
Revision: 13-Jun-14
1
Document Number: 88648
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Single-Phase Single In-Line Bridge Rectifiers
FEATURES
• UL recognition file number E54214
• Thin single in-line package
• Glass passivated chip junction
• High surge current capability
• High case dielectric strength of 1500 V
RMS
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, industrial automation applications.
MECHANICAL DATA
Case: GSIB-5S
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
Notes
(1)
Unit case mounted on aluminum plate heatsink
(2)
Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
PRIMARY CHARACTERISTICS
Package GSIB-5S
I
F(AV)
6.0 A
V
RRM
200 V, 400 V, 600 V, 800 V
I
FSM
180 A
I
R
10 μA
V
F
at I
F
= 3.0 V 0.95 V
T
J
max. 150 °C
Diode variations In-Line
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise specified)
PARAMETER SYMBOL GSIB620 GSIB640 GSIB660 GSIB680 UNIT
Maximum repetitive peak reverse voltage V
RRM
200 400 600 800 V
Maximum RMS voltage V
RMS
140 280 420 560 V
Maximum DC blocking voltage V
DC
200 400 600 800 V
Maximum average forward rectified
output current at
T
C
= 100 °C
(1)
I
F(AV)
6.0
A
T
A
= 25 °C
(2)
2.8
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC method)
I
FSM
180 A
Rating for fusing (t < 8.3 ms) I
2
t 120 A
2
s
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL GSIB620 GSIB640 GSIB660 GSIB680 UNIT
Maximum instantaneous forward
voltage drop per diode
3.0 A V
F
0.95 V
Maximum DC reverse current at
rated DC blocking voltage per
diode
T
A
= 25 °C
I
R
10
μA
T
A
= 125 °C 250
