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DG2749DN-T1-E4

P1-P3P4-P6P7-P9P10-P10
Vishay Siliconix
DG2747, DG2748, DG2749
Document Number: 69977
S09-0396-Rev. B, 09-Mar-09
www.vishay.com
1
0.4-Ω, Low Voltage, Dual SPST Analog Switch
DESCRIPTION
The DG2747, DG2748, and DG2749 are high performance,
low on-resistance analog switches of dual SPST
configuration.
Built on Vishay Siliconix's sub-micro CMOS technology, the
DG2747, DG2748, DG2749 achieve switch on-resistance of
0.4 Ω at 2.7 V V+ and 0.3 Ω at 4.3 V V+. It provides 0.1 Ω
flatness at 2.7 V V+, and total harmonic distortion to 0.03 %
(frequency range 20 Hz to 20 kHz). It achieves - 72 dB
off-isolation and - 100 dB crosstalk at 100 kHz. Its - 3 dB
bandwidth is up to 93 MHz.
It can switch signals with amplitudes of up to V
CC
to be
transmitted in either direction.
The select pins of the control logic can tolerate voltages
above V+. Logic high is 1.4 V to make it compatible with
many low voltage digital control circuits.
Combining wide operation voltage, low power, high speed,
low on-resistance and small physical size, the DG2747,
DG2748, DG2749 are ideal for portable and battery powered
applications requiring high performance and efficient use of
board space.
The DG2747, DG2748, DG2749 come in a small miniQFN-8
lead package (1.4 x 1.4 x 0.55 mm). As a committed partner
to the community and the environment, Vishay Siliconix
manufactures this product with the lead (Pb)-free device
terminations and is 100 % RoHS compliant.
FEATURES
• Wide operation voltage range: 1.6 V to 4.3 V
• Low on-resistance: 0.4 Ω typ. at 2.7 V
• Low voltage logic threshold:
V
th(high)
= 1.4 V at V+ = 3 V
• - 100 dB crosstalk at 100 kHz
• > 250 mA latch up current per JESD78
• Switch exceeds 7 kV ESD/HBM
BENEFITS
• Ultra small miniQFN8 package of 1.4 x 1.4 x 0.55 mm
• High fidelity audio switch
• Reed relay replacement
• Low power consumption
APPLICATIONS
• Cellular phones
• Portable media player
•GPS
• PCMCIA cards
• Medical and test equipment
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Pin 1
Device Marking: Dx for DG2747
x = Date/Lot Traceability Code
Dx
(Top View)
DG2747
miniQFN-8L
Top View
2 6
8
4
1
3
7
5
GND
V+
IN
1
IN
2
NO
2
COM
1
NO
1
Pin 1
Device Marking: Fx for DG2749
x = Date/Lot Traceability Code
Fx
(Top View)
DG2749
miniQFN-8L
Top View
2 6
8
4
1
3
7
5
V+
NC
1
COM
1
IN
1
IN
2
COM
2
NC
2
GND
Pin 1
Device Marking: Ex for DG2748
x = Date/Lot Traceability Code
Ex
(Top View)
2 6
8
4
1
3
7
5
GND
V+
NC
1
NC
2
IN
1
DG2748
miniQFN-8L
IN
2
Top View
COM
1
COM
2
COM
2
RoHS
COMPLIANT
www.vishay.com
2
Document Number: 69977
S09-0396-Rev. B, 09-Mar-09
Vishay Siliconix
DG2747, DG2748, DG2749
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 2.4 mW/°C above 70 °C.
TRUTH TABLE
Logic
DG2747 DG2748 DG2749
COM
1
and NO
1
COM
2
and NO
2
COM
1
and NC
1
COM
2
and NC
2
COM
1
and NC
1
COM
2
and NO
2
Low OFF OFF ON ON ON OFF
High ON ON OFF OFF OFF ON
ORDERING INFORMATION
Temp. Range Package Part Number
- 40 °C to 85°C miniQFN-8L
DG2747DN-T1-E4
DG2748DN-T1-E4
DG2749DN-T1-E4
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Limit Unit
Reference to GND
V+ - 0.3 to 5.0
V
IN, COM, NC, NO
a
- 0.3 to (V+ + 0.3)
Current (Any terminal except NO, NC or COM) 30
mAContinuous Current (NO, NC, or COM) ± 300
Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 500
Storage Temperature (D Suffix) - 65 to 150 °C
Power Dissipation (Packages)
b
miniQFN-8L
c
190 mW
Document Number: 69977
S09-0396-Rev. B, 09-Mar-09
www.vishay.com
3
Vishay Siliconix
DG2747, DG2748, DG2749
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS V+ = 3 V
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %,V
IN
= 0.4 V or 1.4 V
e
Temp.
a
Limits
- 40 °C to 85 °C
Unit Min.
b
Typ.
c
Max.
b
Analog Switch
Analog Signal Range
d
V
analog
R
DS(on)
Full 0 V+ V
On-Resistance R
DS(on)
V+ = 2.7 V, I
NO/NC
= 100 mA, V
COM
= 0.5 V
Room 0.4 0.6
Ω
V+ = 2.7 V, I
NO/NC
= 100 mA, V
COM
= 1.5 V
V+ = 2.7 V, I
NO/NC
= 100 mA, V
COM
= 0.5 V
Full 0.7
V+ = 2.7 V, I
NO/NC
= 100 mA, V
COM
= 1.5 V
R
ON
Match
d
ΔR
ON
V+ = 2.7 V, I
NO/NC
= 100 mA,
V
COM
= 0.5 V, 1.5 V
Room 0.03
R
ON
Resistance Flatness
d
R
ON
flatness
V+ = 2.7 V, I
NO/NC
= 100 mA,
V
COM
= 0.5 V, 1.5 V
Room 0.1 0.2
Switch Off Leakage
Current
I
NO/NC(off)
V+ = 4.3 V, V
NO/NC
= 1.0 V/3.3 V,
V
COM
= 3.3 V/1.0 V
Room - 2 2
nA
Full - 10 10
I
COM(off)
Room - 2 2
Full - 10 10
Channel-On Leakage
Current
I
COM(on)
V+ = 4.3 V, V
NO/NC
= V
COM
= 3.3 V/1.0 V
Room
Full
- 2 2
- 10 10
Digital Control
Input High Voltage V
INH
Full 1.4
V
Input Low Voltage V
INL
Full 0.4
Input Current I
INL
or I
INH
V
IN
= 0 or V+ Full - 1 1 µA
Dynamic Characteristics
Tu r n - On T im e
e
t
ON
V+ = 2.7 V to 3.6 V, V
NO
or V
NC
= 1.5 V,
R
L
= 50 Ω, C
L
= 35 pF
Room 14 25
ns
Full 27
Turn-Off Time
e
t
OFF
Room 12 25
Full 27
Charge Injection
d
Q
C
L
= 1 nF, R
GEN
= 0 Ω, V
GEN
= 0 V
Room 10 pC
Off-Isolation
d
O
IRR
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz
Room
- 52
dB
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz - 72
Crosstalk
d
X
TA LK
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz - 90
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz - 100
3 dB bandwidth
d
R
L
= 50 Ω, C
L
= 5 pF Room 93 MHz
Source Off Capacitance
d
C
NX(off)
f = 1 MHz, V
NX
= 0 V Room 75
pF Drain Off Capacitance
d
C
COM(off)
f = 1 MHz, V
COM
= 0 V Room 55
Drain On Capacitance
d
C
COM(on)
f = 1 MHz, V
COM
= V
NX
= 0 V Room 100
Total Harmonic Distortion
d
THD
V+ = 2.7 V to 3.6 V, V
IN
= 0.5 Vp-p
f = 20 Hz to 20 kHz
Room 0.03 %
Power Supply
Power Supply Range V+ 1.6 4.3 V
Power Supply Current I+ V
IN
= 0 or V+ Full 1.0 µA
P1-P3P4-P6P7-P9P10-P10

DG2749DN-T1-E4

Mfr. #:
Buy DG2749DN-T1-E4
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs RECOMMENDED ALT 781-DG2750DN-E4
Lifecycle:
New from this manufacturer.
Delivery:
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