NXP Semiconductors
BAP64-05W
Silicon PIN diode
BAP64-05W All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 3 — 13 July 2018
5 / 11
7.1 Graphical data
aaa-017759
0 4 8 12 16 20
0
100
200
300
400
500
V
R
(V)
C
d
C
d
(fF)(fF)
f = 1 MHz; T
j
= 25 °C.
Figure 1. Diode capacitance as a function of reverse
voltage; typical values
aaa-017777
10
-1
1 10 10
2
10
-1
1
10
10
2
I
F
(mA)
r
D
r
D
(Ω)(Ω)
f = 100 MHz; T
j
= 25 °C.
Figure 2. Forward resistance as a function of forward
current; typical values
aaa-017760
0.5 1 1.5 2 2.5 3
-25
-20
-15
-10
-5
0
f (GHz)
ISLISL
(dB)(dB)
T
amb
= 25 °C
Diode zero biased and inserted in series with a 50 Ω
stripline circuit
Figure 3. Isolation of the diode as a function of
frequency; typical values
aaa-017761
0.5 1 1.5 2 2.5 3
-2.5
-2
-1.5
-1
-0.5
0
f (GHz)
L
ins
L
ins
(dB)(dB)
(1)(1)
(2)(2)
(3)(3)
(4)(4)
T
amb
= 25 °C
1. I
F
= 100 mA
2. I
F
= 10 mA
3. I
F
= 1 mA
4. I
F
= 0.5 mA
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network
Figure 4. Insertion loss of the diode as a function of
frequency; typical values
