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NLAS5223CMUTAG

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2015
September, 2015 − Rev. 2
1 Publication Order Number:
NLAS5223C/D
NLAS5223C, NLAS5223CL
Ultra-Low 0.35 W
Dual SPDT Analog Switch
The NLAS5223C is an advanced CMOS analog switch fabricated in
Sub−micron silicon gate CMOS technology. The device is a dual
Independent Single Pole Double Throw (SPDT) switch featuring
Ultra−Low R
ON
of 0.35 , at V
CC
= 4.3 V.
The part also features guaranteed Break Before Make (BBM)
switching, assuring the switches never short the driver.
Features
• Ultra−Low R
ON
, 0.35 (typ) at V
CC
= 4.3 V
• NLAS5223C Interfaces with 2.8 V Chipset
• NLAS5223CL Interfaces with 1.8 V Chipset
• Single Supply Operation from 1.65−4.5 V
• Full 0−V
CC
Signal Handling Capability
• High Off−Channel Isolation
• Low Standby Current, t50 nA
• Low Distortion
• R
ON
Flatness of 0.15
• High Continuous Current Capability
♦ ±320 mA Through Each Switch
• Large Current Clamping Diodes at Analog Inputs
♦ ±100 mA Continuous Current Capability
• Package:
♦ 1.4 x 1.8 x 0.55 mm UQFN10 Pb−Free
• These are Pb−Free Devices
Applications
• Cell Phone Audio Block
• Speaker and Earphone Switching
• Ring−Tone Chip/Amplifier Switching
• Modems
www.onsemi.com
MARKING
DIAGRAM
XX = Specific Device Code
M
= Date Code/Assembly Location
G = Pb−Free Device
(Note: Microdot may be in either location)
1
UQFN10
CASE 488AT
XXMG
G
V
CC
IN2
C
OM2
GND
8
9
10
12
NC1
NC2
NO1
76
5
4
3NO2
IN1
COM
1
FUNCTION TABLE
0
1
IN 1, 2 NO 1, 2 NC 1, 2
OFF
ON
ON
OFF
See detailed ordering, marking and shipping information in the
package dimensions section on page 9 of this data sheet.
ORDERING INFORMATION
NLAS5223C, NLAS5223CL
www.onsemi.com
2
NC
IN
NOCOM
Figure 1. Logic Equivalent Circuit
PIN DESCRIPTION
QFN PIN # Symbol Name and Function
2, 5, 7, 10 NC1 to NC2, NO1 to NO2 Independent Channels
4, 8 IN1 and IN2 Controls
3, 9 COM1 and COM2 Common Channels
6 GND Ground (V)
1 V
CC
Positive Supply Voltage
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
Positive DC Supply Voltage −0.5 to +7.0 V
V
IS
Analog Input Voltage (V
NO
, V
NC
, or V
COM
) −0.5 v V
IS
v V
CC
+ 0.5 V
V
IN
Digital Select Input Voltage −0.5 v V
IN
v +5.5 V
I
anl1
Continuous DC Current from COM to NC/NO ±320 mA
I
anl−pk1
Peak Current from COM to NC/NO, 10% Duty Cycle, 100 ms = t
ON
(Note 1) ±600 mA
I
anl−pk2
Instantaneous Peak Current from COM to NC/NO, 10% Duty Cycle, t
ON
< 1 s
±850 mA
I
clmp
Continuous DC Current into COM/NO/NC with Respect to V
CC
or GND ±100 mA
ESD ESD Withstand Voltage Human Body Model (HBM) >3000 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Defined as 10% ON, 90% OFF Duty Cycle.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage 1.65 4.5 V
V
IN
Digital Select Input Voltage (OVT) Overvoltage Tolerance GND 4.5 V
V
IS
Analog Input Voltage (NC, NO, COM) GND V
CC
V
T
A
Operating Temperature Range −40 +85 °C
t
r
, t
f
Input Rise or Fall Time, SELECT
V
CC
= 1.6 V − 2.7 V
V
CC
= 3.0 V − 4.5 V
20
10
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NLAS5223C, NLAS5223CL
www.onsemi.com
3
NLAS5223C DC CHARACTERISTICS − DIGITAL SECTION (Voltages Referenced to GND)
Symbo
l
Parameter Condition V
CC
Guaranteed Limit
Uni
t
25°C −40°C to +85°C
V
IH
Minimum High−Level Input Voltage, Select
Inputs
3.0
4.3
1.4
2.0
1.4
2.0
V
V
IL
Maximum Low−Level Input Voltage, Select
Inputs
3.0
4.3
0.7
0.8
0.7
0.8
V
I
IN
Maximum Input Leakage Current, Select
Inputs
V
IN
= V
CC
or GND 4.3 ±0.1 ±1.0
A
I
OFF
Power Off Leakage Current V
IN
= V
CC
or GND 0 ±0.5 ±2.0
A
I
CC
Maximum Quiescent Supply Current
(Note 2)
Select and V
IS
= V
CC
or GND 1.65 to 4.5 ±1.0 ±2.0
A
2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
NLAS5223C DC ELECTRICAL CHARACTERISTICS − ANALOG SECTION
Symbol Parameter Condition V
CC
Guaranteed Maximum Limit
Uni
t
25°C −40°C to +85°C
Min Max Min Max
R
ON
NC/NO On−Resistance
(Note 3)
V
IN
= V
IL
or V
IN
= V
IH
V
IS
= GND to V
CC
I
COM
= 100 mA
3.0
4.3
0.4
0.35
0.5
0.4
R
FLAT
NC/NO On−Resistance Flatness
(Notes 3 and 4)
I
COM
= 100 mA
V
IS
= 0 to V
CC
3.0
4.3
0.16
0.11
0.20
0.14
R
ON
On−Resistance Match Between Channels
(Notes 3 and 5)
V
IS
= 1.5 V;
I
COM
= 100 mA
V
IS
= 2.2 V;
I
COM
= 100 mA
3.0
4.3
0.05
0.05
0.05
0.05
I
NC(OFF)
I
NO(OFF)
NC or NO Off Leakage Current (Note 3) V
IN
= V
IL
or V
IH
V
NO
or V
NC
= 0.3 V
V
COM
= 4.0 V
4.3 −5.0 5.0 −50 50 nA
I
COM(ON)
COM ON
Leakage Current
(Note 3)
V
IN
= V
IL
or V
IH
V
NO
0.3 V or 4.0 V with
V
NC
floating or
V
NC
0.3 V or 4.0 V with
V
NO
floating
V
COM
= 0.3 V or 4.0 V
4.3 −10 10 −100 100 nA
3. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
4. Flatness is defined as the difference between the maximum and minimum value of On−resistance as measured over the specified analog
signal ranges.
5. R
ON
=
R
ON(MAX)
− R
ON(MIN)
between NC1 and NC2 or between NO1 and NO2.
P1-P3P4-P6P7-P9P10-P10

NLAS5223CMUTAG

Mfr. #:
Buy NLAS5223CMUTAG
Manufacturer:
ON Semiconductor
Description:
Multiplexer Switch ICs ULTRA-LOW 0.35 OHM
Lifecycle:
New from this manufacturer.
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