VND5E025BK-E Electrical specification
Doc ID 16273 Rev 8 7/34
2 Electrical specification
Figure 3. Current and voltage conventions
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
V
Fn
I
S
I
GND
V
CC
V
CC
V
SENSE2
OUTPUT1
I
OUT1
CURRENT
I
SENSE1
INPUT1
I
IN1
V
IN2
V
OUT2
GND
CS_DIS
I
CSD
V
CSD
INPUT2
I
IN2
V
IN1
SENSE1
OUTPUT2
I
OUT2
CURRENT
I
SENSE2
SENSE2
V
SENSE1
V
OUT1
Note:
V
Fn
= V
OUTn
- V
CC
during reverse battery condition.
Table 3. Absolute maximum ratings
Symbol Parameter Value Unit
V
CC
DC supply voltage 41
V
-V
CC
Reverse DC supply voltage 0.3
-I
GND
DC reverse ground pin current 200 mA
I
OUT
DC output current Internally limited
A
- I
OUT
Reverse DC output current 24
I
IN
DC input current
-1 to 10
mAI
CSD
DC current sense disable input current
-I
CSENSE
DC reverse CS pin current 200
V
CSENSE
Current sense maximum voltage V
CC
- 41 to +V
CC
V
Electrical specification VND5E025BK-E
8/34 Doc ID 16273 Rev 8
2.2 Thermal data
E
MAX
Maximum switching energy (single pulse)
(L = 0.8 mH; R
L
=0Ω; V
bat
=13.5V; T
jstart
= 150 °C;
I
OUT
= I
limL
(Typ.))
140 mJ
V
ESD
Electrostatic discharge
(Human Body Model: R = 1.5 kΩ; C = 100 pF)
Input
Current sense
CS_DIS
Output
–V
CC
4000
2000
4000
5000
5000
V
V
V
V
V
V
ESD
Charge device model (CDM-AEC-Q100-011) 750 V
T
j
Junction operating temperature - 40 to 150
°C
T
stg
Storage temperature - 55 to 150
Table 3. Absolute maximum ratings (continued)
Symbol Parameter Value Unit
Table 4. Thermal data
Symbol Parameter Max. value Unit
R
thj-case
Thermal resistance junction-case (with one channel on) 1.35
°C/W
R
thj-amb
Thermal resistance junction-ambient See Figure 33
VND5E025BK-E Electrical specification
Doc ID 16273 Rev 8 9/34
2.3 Electrical characteristics
Values specified in this section are for 8V<V
CC
<28V; -40°C<T
j
<150°C, unless otherwise
stated.
Table 5. Power section
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CC
Operating supply
voltage
4.5 13 28
VV
USD
Undervoltage shutdown 3.5 4.5
V
USDhyst
Undervoltage shutdown
hysteresis
0.5
R
ON
On-state resistance
(1)
1. For each channel.
I
OUT
= 3A; T
j
=25°C 25
mΩI
OUT
= 3A; T
j
=150°C 50
I
OUT
= 3A; V
CC
=5V; T
j
=25°C 35
V
clamp
Clamp voltage I
S
= 20 mA 41 46 52 V
I
S
Supply current
Off-state; V
CC
=13V; T
j
=25°C;
V
IN
=V
OUT
=V
SENSE
=V
CSD
=0V
Off-state; V
CC
=13V; T
j
= 125°C;
V
IN
=V
OUT
=V
SENSE
=V
CSD
=0V
2
(2)
2. PowerMOS leakage included.
5
(2)
9
µA
µA
On-state; V
CC
=13V; V
IN
=5V;
I
OUT
=0A
36mA
I
L(off1)
Off-state output
current
(1)
V
IN
=V
OUT
=0V; V
CC
=13V;
T
j
= 25°C
00.013
µA
V
IN
=V
OUT
=0V; V
CC
=13V;
T
j
= 125°C
05
V
F
Output - V
CC
diode
voltage
(1)
-I
OUT
= 4 A; T
j
= 150°C 0.7 V
Table 6. Switching (V
CC
= 13V; T
j
= 25°C)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
R
L
=4.3 Ω
(see Figure 5)
-20-
µs
t
d(off)
Turn-off delay time - 30 -
(dV
OUT
/dt)
on
Turn-on voltage slope
R
L
=4.3 Ω
-
See
Figure 24
-
V/µs
(dV
OUT
/dt)
off
Turn-off voltage slope -
See
Figure 25
-
W
ON
Switching energy losses
during t
W
ON
R
L
=4.3 Ω
(see Figure 5)
-0.6-
mJ
W
OFF
Switching energy losses
during t
W
OFF
-0.35-

VND5E025BKTR-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Power Switch ICs - Power Distribution Double Ch High Side 41V 25mOhm 60A
Lifecycle:
New from this manufacturer.
Delivery:
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