OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

CAT28C64BW12

P1-P3P4-P6P7-P9P10-P12P13-P13
1
Doc. No. MD-1011, Rev. I© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
FEATURES
■ Fast read access times:
– 90/120/150ns
■ Low power CMOS dissipation:
– Active: 25 mA max.
– Standby: 100
µµ
µµ
µA max.
■ Simple write operation:
– On-chip address and data latches
– Self-timed write cycle with auto-clear
■ Fast write cycle time:
– 5ms max.
■ CMOS and TTL compatible I/O
■ Hardware and software write protection
DESCRIPTION
The CAT28C64B is a fast, low power, 5V-only CMOS
Parallel EEPROM organized as 8K x 8-bits. It requires a
simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and V
CC
power up/down write protection
eliminate additional timing and protection hardware.
DATA Polling and Toggle status bits signal the start and
end of the self-timed write cycle. Additionally, the
CAT28C64B features hardware and software write
protection.
BLOCK DIAGRAM
■ Commercial, industrial and automotive
temperature ranges
■ Automatic page write operation:
– 1 to 32 bytes in 5ms
– Page load timer
■ End of write detection:
– Toggle bit
–
DATADATA
DATADATA
DATA polling
■ 100,000 program/erase cycles
■ 100 year data retention
The CAT28C64B is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC-
approved 28-pin DIP, TSOP, SOIC, or, 32-pin PLCC
package .
ADDR. BUFFER
& LATCHES
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
CONTROL
LOGIC
TIMER
ROW
DECODER
COLUMN
DECODER
HIGH VOLTAGE
GENERATOR
A
5
–A
12
CE
OE
WE
A
0
–A
4
I/O
0
–I/O
7
I/O BUFFERS
8,192 x 8
EEPROM
ARRAY
32 BYTE PAGE
REGISTER
V
CC
DATA POLLING
AND
TOGGLE BIT
64K-Bit CMOS PARALLEL EEPROM
CAT28C64B
CAT28C64B
2
Doc. No. MD-1011, Rev. I
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
PIN CONFIGURATION
A
6
A
5
A
4
A
3
5
6
7
8
A
2
A
1
A
0
NC
9
10
11
12
I/O
0
13
A
8
A
9
A
11
NC
29
28
27
26
OE
A
10
CE
25
24
23
22
I/O
7
21
I/O
1
I/O
2
V
SS
NC
I/O
3
I/O
4
I/O
5
14 15 16 17 18 19 20
4321323130
A
7
A
12
NC
NC
V
CC
WE
NC
I/O
6
TOP VIEW
I/O
2
V
SS
I/O
6
I/O
5
13
14
20
19
18
17
9
10
11
12
24
23
22
21
A
1
A
0
I/O
0
I/O
1
OE
A
10
CE
I/O
7
A
5
A
4
A
3
A
2
5
6
7
8
1
2
3
4
NC
A
12
A
7
A
6
A
9
A
11
28
27
26
25
V
CC
WE
NC
A
8
I/O
4
I/O
3
16
15
PLCC Package (N, G)
SOIC Package (J, W) (K, X)
DIP Package (P, L)
I/O
2
V
SS
I/O
6
I/O
5
13
14
20
19
18
17
9
10
11
12
24
23
22
21
A
1
A
0
I/O
0
I/O
1
OE
A
10
CE
I/O
7
A
5
A
4
A
3
A
2
5
6
7
8
1
2
3
4
NC
A
12
A
7
A
6
A
9
A
11
28
27
26
25
V
CC
WE
NC
A
8
I/O
4
I/O
3
16
15
TSOP Package (8mm x 13.4mm) (H13)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
I/O
6
I/O
5
I/O
4
GND
I/O
2
A
1
A
2
V
CC
NC
WE
NC
A
8
A
9
A
11
OE
A
7
A
6
A
5
A
4
A
3
A
10
I/O
7
A
12
16
15
CE
I/O
3
I/O
1
I/O
0
A
0
PIN FUNCTIONS
Pin Name Function Pin Name Function
A
0
–A
12
Address Inputs WE Write Enable
I/O
0
–I/O
7
Data Inputs/Outputs V
CC
5 V Supply
CE Chip Enable V
SS
Ground
OE Output Enable NC No Connect
CAT28C64B
3
Doc. No. MD-1011, Rev. I
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55°C to +125°C
Storage Temperature....................... –65°C to +150°C
Voltage on Any Pin with
Respect to Ground
(2)
........... –2.0V to +V
CC
+ 2.0V
V
CC
with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C)................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current
(3)
........................ 100 mA
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
RELIABILITY CHARACTERISTICS
Symbol Parameter Min. Max. Units Test Method
N
END
(1)
Endurance 10
5
Cycles/Byte MIL-STD-883, Test Method 1033
T
DR
(1)
Data Retention 100 Years MIL-STD-883, Test Method 1008
V
ZAP
(1)
ESD Susceptibility 2000 Volts MIL-STD-883, Test Method 3015
I
LTH
(1)(4)
Latch-Up 100 mA JEDEC Standard 17
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to V
CC
+1V.
MODE SELECTION
Mode CE WE OE I/O Power
Read L H L D
OUT
ACTIVE
Byte Write (WE Controlled) L H D
IN
ACTIVE
Byte Write (CE Controlled) L H D
IN
ACTIVE
Standby, and Write Inhibit H X X High-Z STANDBY
Read and Write Inhibit X H H High-Z ACTIVE
CAPACITANCE T
A
= 25°C, f = 1.0 MHz, V
CC
= 5V
Symbol Test Max. Units Conditions
C
I/O
(1)
Input/Output Capacitance 10 pF V
I/O
= 0V
C
IN
(1)
Input Capacitance 6 pF V
IN
= 0V
P1-P3P4-P6P7-P9P10-P12P13-P13

CAT28C64BW12

Mfr. #:
Buy CAT28C64BW12
Manufacturer:
ON Semiconductor
Description:
IC EEPROM 64K PARALLEL 28SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet