APTGF90A60T1G Datasheet APTGF90A60T1G | P1-P3

APTGF90A60T1G

APTGF90A60T1G – Rev 1 October, 2012

www.microsemi.com

1

–

7

9

Q2

Q1

10

12

21

7

8

11

3

4

CR1

CR2

56

NTC

Pins 1/2 ; 3/4 ; 5/6 must be shorted together

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

See application note

APT0502 on www.microsemi.com

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Breakdown Voltage 600 V

T

c

= 25°C

110

I

C

Continuous Collector Current

T

c

= 80°C

90

I

CM

Pulsed Collector Current T

c

= 25°C 315

A

V

GE

Gate – Emitter Voltage ±20 V

P

D

Maximum Power Dissipation

T

c

= 25°C

416 W

RBSOA Reverse Bias Safe Operating Area T

j

= 150°C 200A @ 600V

Application

 Welding converters

 Switched Mode Power Supplies

 Uninterruptible Power Supplies

 Motor control

Features

 Non Punch Through (NPT) Fast IGBT

- Low voltage drop

- Low tail current

- Switching frequency up to 100 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- RBSOA and SCSOA rated

 Very low stray inductance

- Symmetrical design

 Internal thermistor for temperature monitoring

 High level of integration

Benefits

 Outstanding performance at high frequency operation

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Solderable terminals both for power and signal for

easy PCB mounting

 Low profile

 RoHS Compliant

Phase leg

N

PT IGBT Power Module

V

CES

= 600V

I

C

= 90A @ Tc = 80°C

APTGF90A60T1G

APTGF90A60T1G – Rev 1 October, 2012

www.microsemi.com

2

–

7

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

T

j

= 25°C 250

I

CES

Zero Gate Voltage Collector Current

V

GE

= 0V

V

CE

= 600V

T

j

= 125°C 500

µA

T

j

= 25°C

2.0 2.5

V

CE(sat)

Collector Emitter saturation Voltage

V

GE

=15V

I

C

= 90A

T

j

= 125°C

2.2

V

GE(th)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 1mA 3 5 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20 V, V

CE

= 0V ±150 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance 4300

C

oes

Output Capacitance 470

C

res

Reverse Transfer Capacitance

V

GE

= 0V

V

CE

= 25V

f = 1MHz

400

pF

Q

g

Total gate Charge 330

Q

ge

Gate – Emitter Charge 290

Q

gc

Gate – Collector Charge

V

GE

= 15V

V

Bus

= 300V

I

C

= 90A

200

nC

T

d(on)

Turn-on Delay Time 26

T

r

Rise Time 25

T

d(off)

Turn-off Delay Time 150

T

f

Fall Time

Inductive Switching (25°C)

V

GE

= 15V

V

Bus

= 400V

I

C

= 90A

R

G

= 5 

30

ns

T

d(on)

Turn-on Delay Time 26

T

r

Rise Time 25

T

d(off)

Turn-off Delay Time 170

T

f

Fall Time

Inductive Switching (125°C)

V

GE

= 15V

V

Bus

= 400V

I

C

= 90A

R

G

= 5 

40

ns

E

on

Turn-on Switching Energy T

j

= 125°C 4.3

E

off

Turn-off Switching Energy

V

GE

= 15V

V

Bus

= 400V

I

C

= 90A

R

G

= 5 

T

j

= 125°C 3.5

mJ

Reverse diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage

600 V

T

j

= 25°C 35

I

RM

Maximum Reverse Leakage Current V

R

=600V

T

j

= 125°C 600

µA

I

F

DC Forward Current

Tc = 80°C 60 A

I

F

= 60A 1.8 2.2

I

F

= 120A 2.2

V

F

Diode Forward Voltage

I

F

= 60A

T

j

= 125°C

1.5

V

T

j

= 25°C 25

t

rr

Reverse Recovery Time

T

j

= 125°C 160

ns

T

j

= 25°C 70

Q

rr

Reverse Recovery Charge

I

F

= 60A

V

R

= 400V

di/dt =400A/µs

T

j

= 125°C 960

nC

APTGF90A60T1G

APTGF90A60T1G – Rev 1 October, 2012

www.microsemi.com

3

–

7

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

IGBT

0.3

R

thJC

Junction to Case Thermal Resistance

Diode

0.65

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

4000 V

T

J

Operating junction temperature range -40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M4 2 3 N.m

Wt Package Weight 80 g

Temperature sensor NTC

(see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

k

B

25/85

T

25

= 298.15 K 3952

K





























TT

B

R

T

11

exp

25

85/25

25

SP1 Package outline

(dimensions in mm)

See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value at T

APTGF90A60T1G

APTGF90A60T1G

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