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MT36JSF2G72PZ-1G9P1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available at micron.com. Module speed grades correlate
with component speed grades, as shown below.
Table 10: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
16GB (x72, ECC, DR) 240-Pin DDR3 RDIMM
DRAM Operating Conditions
PDF: 09005aef846f3cd1
jsf36c2gx72pz.pdf - Rev. G 7/15 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 11: DDR3 I
DD
Specifications and Conditions – 16GB (Die Revision E)
Values are for the MT41J1G4 DDR3 SDRAM only and are computed from values specified in the 4Gb
(1 Gig x 4) component data sheet
Parameter Symbol 1866 1600 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
1440 1314 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
1490 1422 mA
Precharge power-down current: Slow exit I
DD2P0
2
648 648 mA
Precharge power-down current: Fast exit I
DD2P1
2
1332 1152 mA
Precharge quiet standby current I
DD2Q
2
1260 1152 mA
Precharge standby current I
DD2N
2
1260 1152 mA
Precharge standby ODT current I
DD2NT
1
1080 1026 mA
Active power-down current I
DD3P
2
1476 1368 mA
Active standby current I
DD3N
2
1476 1368 mA
Burst read operating current I
DD4R
1
3276 2970 mA
Burst write operating current I
DD4W
1
2718 2448 mA
Refresh current I
DD5B
1
4680 4554 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
720 720 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
900 900 mA
All banks interleaved read current I
DD7
1
4842 4284 mA
Reset current I
DD8
2
720 720 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
16GB (x72, ECC, DR) 240-Pin DDR3 RDIMM
I
DD
Specifications
PDF: 09005aef846f3cd1
jsf36c2gx72pz.pdf - Rev. G 7/15 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Table 12: DDR3 I
DD
Specifications and Conditions – 16GB (Die Revision N)
Values are for the MT41K1G4 DDR3 SDRAM only and are computed from values specified in the 4Gb
(1 Gig x 4) component data sheet
Parameter Symbol 1866 1600 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
1026 990 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
1206 1152 mA
Precharge power-down current: Slow exit I
DD2P0
2
288 288 mA
Precharge power-down current: Fast exit I
DD2P1
2
576 504 mA
Precharge quiet standby current I
DD2Q
2
936 864 mA
Precharge standby current I
DD2N
2
936 864 mA
Precharge standby ODT current I
DD2NT
1
684 648 mA
Active power-down current I
DD3P
2
1008 936 mA
Active standby current I
DD3N
2
1152 1080 mA
Burst read operating current I
DD4R
1
1854 1674 mA
Burst write operating current I
DD4W
1
1854 1674 mA
Refresh current I
DD5B
1
3384 3294 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
432 432 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
576 576 mA
All banks interleaved read current I
DD7
1
2664 2484 mA
Reset current I
DD8
2
360 360 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
16GB (x72, ECC, DR) 240-Pin DDR3 RDIMM
I
DD
Specifications
PDF: 09005aef846f3cd1
jsf36c2gx72pz.pdf - Rev. G 7/15 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

MT36JSF2G72PZ-1G9P1

Mfr. #:
Buy MT36JSF2G72PZ-1G9P1
Manufacturer:
Micron
Description:
Memory Modules DDR3 16GB RDIMM
Lifecycle:
New from this manufacturer.
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