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RN2109MFV,L3F

P1-P3P4-P6
RN2107MFV to RN2109MFV
2016-09-14
1
1. BASE
2. EMITTER
3. COLLECTOR
VESM
1.2±0.05
0.32±0.05
1
2
3
0.4 0.4
0.22±0.05
0.8±0.05
0.8±0.05
1.2±0.05
0.5±0.05
0.13±0.05
Type No. R1 (kΩ) R2 (kΩ)
RN2107MFV 10 47
RN2108MFV 22 47
RN2109MFV 47 22
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2107MFV, RN2108MFV, RN2109MFV
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Ultra-small package, suited to very high density mounting
Incorporating a bias resistor into the transistor reduces the number of parts, so
enabling the manufacture of ever more compact equipment and lowering
assembly cost.
A wide range of resistor values is available for use in various circuits.
Complementary to the RN1107MFV to RN1109MFV
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage
RN2107MFV to
RN2109MFV
V
CBO
−50 V
Collector-emitter voltage V
CEO
−50 V
Emitter-base voltage
RN2107MFV
V
EBO
−6
V RN2108MFV −7
RN2109MFV −15
Collector current
RN2107MFV
to
RN2109MFV
I
C
−100 mA
Collector power dissipation P
C
(Note 1) 150 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Land Pattern Example
JEDEC ―
JEITA ―
TOSHIBA
2-1L1A
Weight: 1.5 mg (typ.)
Unit: mm
0.5
0.45
0.4
0.4
1.15
0.45
0.4
Start of commercial production
2005-02
Unit: mm
RN2107MFV to RN2109MFV
2016-09-14
2
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Collector cutoff
current
RN2107MFV to
RN2109MFV
I
CBO
V
CB
= −50 V, I
E
= 0 A ― ― −100 nA
I
CEO
V
CE
= −50 V, I
B
= 0 A ― ― −500 nA
Emitter cutoff current
RN2107MFV
I
EBO
V
EB
= −6 V, I
C
= 0 A −0.081 ― −0.15
mA
RN2108MFV V
EB
= −7 V, I
C
= 0 A −0.078 ― −0.145
RN2109MFV V
EB
= −15 V, I
C
= 0 A −0.167 ― −0.311
DC current gain
RN2107MFV
h
FE
V
CE
= −5 V,
I
C
= −10 mA
80 ― ―
―
RN2108MFV 80 ― ―
RN2109MFV 70 ― ―
Collector-emitter
saturation voltage
RN2107MFV to
RN2109MFV
V
CE (sat)
I
C
= −5 mA,
I
B
= −0.5 mA
― −0.1 −0.3
V
Input voltage (ON)
RN2107MFV
V
I (ON)
V
CE
= −0.2 V,
I
C
= −5 mA
−0.7 ― −1.8
V
RN2108MFV
−1.0 ― −2.6
RN2109MFV
−2.2 ― −5.8
Input voltage (OFF)
RN2107MFV
V
I (OFF)
V
CE
= −5 V,
I
C
= −0.1 mA
−0.5 ― −1.0
V
RN2108MFV
−0.6 ― −1.16
RN2109MFV
−1.5 ― −2.6
Collector output
capacitance
RN2107MFV to
RN2109MFV
C
ob
V
CB
= −10 V, I
E
= 0 A,
f = 1 MH
z
― 0.9 ―
pF
Input resistor
RN2107MFV
R1 ―
7 10 13
kΩ
RN2108MFV
15.4 22 28.6
RN2109MFV
32.9 47 61.1
Resistor ratio
RN2107MFV
R1/R2 ―
0.17 0.213 0.255
―
RN2108MFV
0.374 0.468 0.562
RN2109MFV
1.71 2.14 2.56
RN2107MFV to RN2109MFV
2016-09-14
3
P1-P3P4-P6

RN2109MFV,L3F

Mfr. #:
Buy RN2109MFV,L3F
Manufacturer:
Toshiba
Description:
Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 47kohm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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