NTB0102 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 January 2013 4 of 26
NXP Semiconductors
NTB0102
Dual supply translating transceiver; auto direction sensing; 3-state
7. Functional description
[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
[2] When either V
CC(A)
or V
CC(B)
is at GND level, the device goes into Power-down mode.
8. Limiting values
[1] The minimum input and minimum output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] V
CCO
is the supply voltage associated with the output.
[3] V
CCO
+ 0.5 V should not exceed 6.5 V.
[4] For TSSOP8 package: above 55 C the value of P
tot
derates linearly with 2.5 mW/K.
For XSON8 packages: above 118 C the value of P
tot
derates linearly with 7.8 mW/K.
For XQFN10 package: above 128 C the value of P
tot
derates linearly with 11.5 mW/K.
OE 6 4 output enable input (active HIGH;
referenced to V
CC(A)
)
V
CC(B)
7 6 supply voltage B
n.c. - 3, 7 not connected
Table 3. Pin description
…continued
Symbol Pin Description
SOT505-2, SOT833-1, SOT1089 and SOT996-2 SOT1160-1
Table 4. Function table
[1]
Supply voltage Input Input/output
V
CC(A)
V
CC(B)
OE An Bn
1.2 V to V
CC(B)
1.65 V to 5.5 V L Z Z
1.2 V to V
CC(B)
1.65 V to 5.5 V H input or output output or input
GND
[2]
GND
[2]
XZZ
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC(A)
supply voltage A 0.5 +6.5 V
V
CC(B)
supply voltage B 0.5 +6.5 V
V
I
input voltage
[1]
0.5 +6.5 V
V
O
output voltage Active mode
[1][2][3]
0.5 V
CCO
+0.5 V
Power-down or 3-state mode
[1]
0.5 +6.5 V
I
IK
input clamping current V
I
<0V 50 - mA
I
OK
output clamping current V
O
<0V 50 - mA
I
O
output current V
O
=0VtoV
CCO
[2]
- 50 mA
I
CC
supply current I
CC(A)
or I
CC(B)
-100mA
I
GND
ground current 100 - mA
T
stg
storage temperature 65 +150 C
P
tot
total power dissipation T
amb
= 40 C to +125 C
[4]
-250mW