NTLJF3117PT1G Datasheet NTLJF3117PT1G, NTLJF3117PTAG | P1-P3

© Semiconductor Components Industries, LLC, 2006

July, 2006 - Rev. 2

1 Publication Order Number:

NTLJF3117P/D

NTLJF3117P

Power MOSFET and

Schottky Diode

-20 V, -4.1 A, P-Channel, with 2.0 A

Schottky Barrier Diode, 2x2 mm,

mCool] Package

Features

•FETKYt Configuration with MOSFET plus Low Vf Schottky Diode

•mCOOLt Package Provides Exposed Drain Pad for Excellent

Thermal Conduction

•2x2 mm Footprint Same as SC-88 Package Design

•Independent Pinout Provides Circuit Design Flexibility

•Low Profile (< 0.8 mm) for Easy Fit in Thin Environment

•High Current Schottky Diode: 2 A Current Rating

•This is a Pb-Free Device

Applications

•Optimized for Portable Applications like Cell Phones, Digital

Cameras, Media Players, etc.

•DC-DC Buck Circuit

•Li-Ion Battery Applications

•Color Display and Camera Flash Regulators

MAXIMUM RATINGS (T

J

= 25°C unless otherwise noted)

Parameter

Symbol Value Unit

Drain-to-Source Voltage V

DSS

-20 V

Gate-to-Source Voltage V

GS

±8.0 V

Continuous Drain

Current (Note 1)

Steady

State

T

A

= 25°C

I

D

-3.3

A

T

A

= 85°C -2.4

t ≤ 5 s T

A

= 25°C -4.1

Power Dissipation

(Note 1)

Steady

State

T

A

= 25°C

P

D

1.5

W

t ≤ 5 s 2.3

Continuous Drain

Current (Note 2)

Steady

State

T

A

= 25°C

I

D

-2.3

A

T

A

= 85°C -1.6

Power Dissipation

(Note 2)

T

A

= 25°C

P

D

0.71 W

Pulsed Drain Current

t

p

= 10 ms

I

DM

-20 A

Operating Junction and Storage Temperature T

J

, T

STG

-55 to

150

°C

Source Current (Body Diode) (Note 2) I

S

-1.9 A

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

T

L

260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[1 oz] including traces).

2. Surface Mounted on FR4 Board using the minimum recommended pad size

of 30 mm

2

, 2 oz Cu.

1

2

3

6

5

4

A

N/C

D

K

G

S

http://onsemi.com

-20 V

30 V

135 mW @ -2.5 V

100 mW @ -4.5 V

2.0 A

R

DS(on)

MAX

-4.1 A

0.47 V

I

D

MAX (Note 1)V

(BR)DSS

MOSFET

SCHOTTKY DIODE

V

R

MAX I

F

MAXV

F

TYP

200 mW @ -1.8 V

G

S

P-CHANNEL MOSFET

D

K

A

SCHOTTKY DIODE

JH = Specific Device Code

M = Date Code

G = Pb-Free Package

(Note: Microdot may be in either location)

JHMG

G

1

2

3

6

5

4

WDFN6

CASE 506AN

MARKING

DIAGRAM

(Top View)

1

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

ORDERING INFORMATION

PIN CONNECTIONS

K

D

NTLJF3117P

http://onsemi.com

2

SCHOTTKY DIODE MAXIMUM RATINGS (T

J

= 25°C unless otherwise noted)

Parameter

Symbol Value Unit

Peak Repetitive Reverse Voltage V

RRM

30 V

DC Blocking Voltage V

R

30 V

Average Rectified Forward Current I

F

2.0 A

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction-to-Ambient – Steady State (Note 3)

R

q

JA

83

°C/W

Junction-to-Ambient – t ≤ 5 s (Note 3)

R

q

JA

54

Junction-to-Ambient – Steady State Min Pad (Note 4)

R

q

JA

177

3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm

2

, 2 oz Cu.

MOSFET ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

Parameter

Symbol Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V

(BR)DSS

V

GS

= 0 V, I

D

= -250 mA

-20 V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

V

(BR)DSS

/T

J

I

D

= -250 mA, Ref to 25°C

9.95 mV/°C

Zero Gate Voltage Drain Current I

DSS

V

DS

= -16 V, V

GS

= 0 V

T

J

= 25°C -1.0 mA

T

J

= 85°C -10

Gate-to-Source Leakage Current I

GSS

V

DS

= 0 V, V

GS

= ±8.0 V ±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

V

GS(TH)

V

GS

= V

DS

, I

D

= -250 mA

-0.4 -0.7 -1.0 V

Negative Threshold

Temperature Coefficient

V

GS(TH)

/T

J

2.44 mV/°C

Drain-to-Source On-Resistance R

DS(on)

V

GS

= -4.5, I

D

= -2.0 A 75 100 mW

V

GS

= -2.5, I

D

= -2.0 A 101 135

V

GS

= -1.8, I

D

= -1.6 A 150 200

Forward Transconductance g

FS

V

DS

= -5.0 V, I

D

= -2.0 A 3.1 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

C

ISS

V

GS

= 0 V, f = 1.0 MHz,

V

DS

= -10 V

531

pF

Output Capacitance C

OSS

91

Reverse Transfer Capacitance C

RSS

56

Total Gate Charge Q

G(TOT)

V

GS

= -4.5 V, V

DS

= -10 V,

I

D

= -2.0 A

5.5 6.2

nC

Threshold Gate Charge Q

G(TH)

0.7

Gate-to-Source Charge Q

GS

1.0

Gate-to-Drain Charge Q

GD

1.4

Gate Resistance R

G

8.8

W

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time

t

d(ON)

V

GS

= -4.5 V, V

DD

= -5.0 V,

I

D

= -1.0 A, R

G

= 6.0 W

5.2

ns

Rise Time t

r

13.2

Turn-Off Delay Time t

d(OFF)

13.7

Fall Time t

f

19.1

5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

NTLJF3117P

http://onsemi.com

3

MOSFET ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

Parameter UnitMaxTypMinTest ConditionsSymbol

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time

t

d(ON)

V

GS

= -4.5 V, V

DD

= -10 V,

I

D

= -2.0 A, R

G

= 2.0 W

5.5

ns

Rise Time t

r

15

Turn-Off Delay Time t

d(OFF)

19.8

Fall Time t

f

21.6

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Recovery Voltage

V

SD

V

GS

= 0 V, IS = -1.0 A

T

J

= 25°C -0.75 -1.0

V

T

J

= 125°C -0.64

Reverse Recovery Time t

RR

V

GS

= 0 V, d

ISD

/d

t

= 100 A/ms,

I

S

= -1.0 A

16.2

ns

Charge Time t

a

10.6

Discharge Time t

b

5.6

Reverse Recovery Time Q

RR

5.7 nC

5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

Parameter

Symbol Test Conditions Min Typ Max Unit

Maximum Instantaneous

Forward Voltage

V

F

I

F

= 0.1 A 0.34 0.39

V

I

F

= 1.0 A 0.47 0.53

Maximum Instantaneous

Reverse Current

I

R

V

R

= 30 V 17 20

mA

V

R

= 20 V 3.0 8.0

V

R

= 10 V 2.0 4.5

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

J

= 85°C unless otherwise noted)

Parameter Symbol Test Conditions Min Typ Max Unit

Maximum Instantaneous

Forward Voltage

V

F

I

F

= 0.1 A 0.22 0.35

V

I

F

= 1.0 A 0.40 0.50

Maximum Instantaneous

Reverse Current

I

R

V

R

= 30 V 0.22 2.5

mA

V

R

= 20 V 0.11 1.6

V

R

= 10 V 0.06 1.2

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

J

= 125°C unless otherwise noted)

Parameter

Symbol Test Conditions Min Typ Max Unit

Maximum Instantaneous

Forward Voltage

V

F

I

F

= 0.1 A 0.2 0.29

V

I

F

= 1.0 A 0.4 0.47

Maximum Instantaneous

Reverse Current

I

R

V

R

= 30 V 2.0 20

mA

V

R

= 20 V 1.1 10.9

V

R

= 10 V 0.63 8.4

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

Parameter Symbol Test Conditions Min Typ Max Unit

Capacitance C V

R

= 5.0 V, f = 1.0 MHz 38 pF

7. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

8. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm

2

, 2 oz cu.

9. Pulse Test: pulse width v 300 ms, duty cycle v2%.

10.Switching characteristics are independent of operating junction temperatures.

NTLJF3117PT1G

NTLJF3117PT1G

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